MOSFET 150V Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

mosfet 4702

Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts

mosfet 4702

Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating

IXZ2210N50L

Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N15V Preliminary Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N15V is an N-Channel POWER MOSFET, it uses UTC’s advanced technology to provide customers with high switching speed and low gate charge.

Contextual Info: PD - 96284 IRF7815PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 150V 43m @VGS = 10V 25nC 1 8 S 2 7 S 3

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF5N15Z Power MOSFET 5A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION 1 The UTC UF5N15Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 40N15 Preliminary Power MOSFET 40A, 150V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 40N15 is an N-channel enhancement MOSFET, it uses UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N15 Preliminary Power MOSFET 60A, 150V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N15 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF6N15Z Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET  DESCRIPTION 1 The UTC UF6N15Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF6N15 Preliminary Power MOSFET 6A, 150V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF6N15 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

20N15

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N15 Power MOSFET 20A, 150V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N15 is an N-Channel POWER MOSFET, it uses UTC’s advanced technology to provide customers with high switching speed and low gate charge. The UTC 20N15 is suitable for bridge circuits, power

CBVK741B019

Abstract: EO70 FDB2570 FDP2570 FDP7060 NDP4060L
Contextual Info: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features Description • RDS on = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

TESTO10

Contextual Info: FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features Description • RDS on = 290 m (Max.) @ VGS = 10 V, ID = 7 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDA38N30 N-Channel UniFETTM MOSFET 300 V, 38 A, 85 mΩ Features Description • RDS on = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

CBVK741B019

Abstract: F63TNR FDD2512 FDD6680 marking 300 to252
Contextual Info: FDD2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature

Contextual Info: AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary The AOT2500L/AOB2500L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 150V 152A efficient high frequency switching performance. Both

Contextual Info: AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary The AOT2500L/AOB2500L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 150V 152A efficient high frequency switching performance. Both

rf power mosfet

Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
Contextual Info: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings

Contextual Info: AOD254 150V N-Channel MOSFET General Description Product Summary The AOD254 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of

Contextual Info: AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized