FDA38N30 Search Results
FDA38N30 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDA38N30 | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V TO-3 | Original | 8 |
FDA38N30 Price and Stock
onsemi FDA38N30Power MOSFET N-Channel UniFETTM 300V 38A 85mΩ TO-3P |
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Fairchild Semiconductor Corporation FDA38N30300 V, 38 A, 85 MILLI OHM N-CHANNEL UNIFET MOSFET Power Field-Effect Transistor, 38A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDA38N30 | 150 |
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FDA38N30 | 18,000 |
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FDA38N30 Datasheets Context Search
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|---|---|---|---|
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Contextual Info: FDA38N30 N-Channel UniFETTM MOSFET 300 V, 38 A, 85 mΩ Features Description • RDS on = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to |
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fda38n30 | |
FDA38N30Contextual Info: FDA38N30 N-Channel UniFETTM MOSFET 300 V, 38 A, 85 m Features Description • RDS on = 70 m (Typ.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to |
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Contextual Info: UniFETTM FDA38N30 N-Channel MOSFET 300V, 38A, 0.085Ω Features Description • RDS on = 0.07Ω ( Typ.) @ VGS = 10V, ID = 19A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. |
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FDA38N30Contextual Info: UniFETTM FDA38N30 N-Channel MOSFET 300V, 38A, 0.085 Features Description • RDS on = 0.07 ( Typ.) @ VGS = 10V, ID = 19A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. |
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