MOSFET 1412 Search Results

Contextual Info: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET

TC1412

Abstract: TC1412COA TC1412CPA TC1412EOA TC1412EPA TC1412N TC1412NCOA TC1412NCPA
Contextual Info: 2A HIGH-SPEED MOSFET DRIVERS TC1412 TC1412 TC1412N TC1412N 2A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • The TC1412/1412N are 2A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to

F 5M 365 R

Contextual Info: NTHD5904T1 Product Preview Dual N-Channel 2.5 V G-S MOSFET http://onsemi.com D2 D1 G2 G1 VDS (V) 20 S2 S1 PRODUCT SUMMARY rDS(on) (Ω) ID (A) 0.075 @ VGS = 4.5 V "4.2 0.134 @ VGS = 2.5 V "3.1 N–Channel MOSFET N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

A6 TSOP-6

Contextual Info: NTHD5902T1 Product Preview Dual N-Channel 30 V D-S MOSFET http://onsemi.com D1 D2 G1 G2 PRODUCT SUMMARY S1 VDS (V) 30 rDS(on) (Ω) ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 S2 N–Channel MOSFET N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

PHILIPS MOSFET MARKING

Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET

mosfet K 2865

Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET

TRANSISTOR ww1

Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
Contextual Info: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY

t3055vl

Abstract: 3055VL T30-55VL 418B-03 5M MARKING CODE DIODE SMC MTD3055VLT4
Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

TSSOP-8 footprint and soldering sot-23

Contextual Info: MTB50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

5p03h

Abstract: TRANSISTOR LWW 21 ultra low level FET TO-236 sot363 ON Marking DS to247 pcb footprint TRANSISTOR LWW 20
Contextual Info: MMFT5P03HD Preferred Device Power MOSFET 5 Amps, 30 Volts P–Channel SOT–223 This miniature surface mount MOSFET features ultra low RDS on and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the

ON semiconductor 340g

Abstract: sot-223 body marking D K Q F
Contextual Info: MMFT2406T1 Preferred Device Power MOSFET 700 mA, 240 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT–223

HV9100

Abstract: HV9100C HV9100P HV9100PJ HV9102 HV9102C HV9102P HV9102PJ HV9103 HV9103C
Contextual Info: HV9100 HV9102 HV9103 High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN MOSFET Switch Package Options Max Feedback Voltage Max Duty Cycle BVDSS RDS ON 10V 70V ± 1.0% 49% 150V 5.0Ω HV9100P HV9100C HV9100PJ 10V 120V ± 1.0% 49% 200V

diode 1407

Abstract: FT107
Contextual Info: MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223

2955E

Abstract: TD 1409
Contextual Info: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.

Contextual Info: NTHS5404T1 Product Preview N-Channel 2.5 V G-S MOSFET http://onsemi.com D G S PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 @ VGS = 4.5 V "7.2 0.045 @ VGS = 2.5 V "5.9 N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating

V9102

Contextual Info: HV9100 HV9102 HV9103 Supertex inc. High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN Max Duty Cycle MOSFET Switch Package Options Min Max Feedback Voltage b v dss ^DS ON 10V 70V ± 1 .0 % 49% 150V 5 .0 ft HV91 OOP H V9100C H V9100PJ

ON semiconductor 340g

Contextual Info: NTHS5443T1 Product Preview P-Channel 2.5 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –20 RDS(on) (Ω) ID (A) 0.065 @ VGS = –4.5 V "4.9 0.074 @ VGS = –3.6 V "4.6 0.110 @ VGS = –2.5 V "3.8 P–Channel MOSFET ChipFET CASE 1206A STYLE 1

marking code J1 sot23

Contextual Info: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new

A6 TSOP-6 MARKING

Contextual Info: NTHS5402T1 Product Preview N-Channel 30 V D-S MOSFET http://onsemi.com D G S PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V "5.3 N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol

Contextual Info: NTHS5441T1 Product Preview P-Channel 2.5 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 P–Channel MOSFET ChipFET CASE 1206A STYLE 1

TIL 414

Contextual Info: S u p e r t e x in c HV9100 HV9102 HV9103 . High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN MOSFET Switch Package O ptions Min Max Feedback Voltage Max Duty Cycle b v dss ^DS ON 10V 70V ± 1.0% 49% 150V 5.0Q. HV91 OOP HV9100C HV9100PJ

Contextual Info: NTHS5445T1 Product Preview P-Channel 1.8 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –8.0 rDS(on) (Ω) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 P–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

E3P03

Abstract: 369A-13
Contextual Info: NTMS3P03R2 Product Preview Power MOSFET -3.05 Amps, -30 Volts P–Channel SO–8 Features • • • • • • • http://onsemi.com High Efficiency Components in a Single SO–8 Package High Density Power MOSFET with Low RDS on Miniature SO–8 Surface Mount Package – Saves Board Space

Contextual Info: NTHD5903T1 Product Preview Dual P-Channel 2.5 V G-S MOSFET http://onsemi.com S1 S2 G2 G1 PRODUCT SUMMARY VDS (V) –20 D2 D1 rDS(on) (Ω) ID (A) 0.155 @ VGS = –4.5 V "2.9 0.180 @ VGS = –3.6 V "2.7 0.260 @ VGS = –2.5 V "2.2 P–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)