Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOS TECHNOLOGY INC Search Results

    MOS TECHNOLOGY INC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D
    		Murata Manufacturing Co Ltd Data Line Filter, PDF
    NFM15PC755R0G3D
    		Murata Manufacturing Co Ltd Feed Through Capacitor, PDF
    NFM15PC435R0G3D
    		Murata Manufacturing Co Ltd Feed Through Capacitor, PDF
    GCM033C71A104KE02J
    		Murata Manufacturing Co Ltd 0201 (0603M) X7S (EIA) 10Vdc 0.1μF±10% PDF
    GCM188N8EA226ME08D
    		Murata Manufacturing Co Ltd 0603 (1608M) X8N(MURATA) 2.5Vdc 22μF±20% PDF

    MOS TECHNOLOGY INC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    power bjt advantages and disadvantages

    Abstract: advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages linear cmos logic advantages of a bjt amplifier polysilicon resistor fabrication BJT amplifiers Cmos not gate high frequency
    Contextual Info: Silicon Gate CMOS Linear Technology Introduction Historically, MOS technology has been the domain of the digital designer. Analog designers might use MOS transistors for the input stage of a high input impedance operational amplifier or use discrete MOS transistors in


    Original     		PDF

    Contextual Info: Vishay Intertechnology, Inc. RECTIFIERS TMBS IN SMPA Very Low Profile Typical Height of 0.95 mm, Trench MOS Barrier Schottky Technology TMBS® IN SMPD Very Low Profile Typical Height of 1.7 mm, Trench MOS Barrier Schottky Technology TMBS® IN SlimSMA Very Low Profile


    Original     		AEC-Q101 VMN-MS6928-1505 PDF

    Contextual Info: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6015LVFR O-264 O-264 PDF

    Contextual Info: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6011LVFR O-264 O-264 PDF

    APT6015JVFR

    Contextual Info: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS


    Original     		APT6015JVFR E145592 OT-227 APT6015JVFR PDF

    Contextual Info: APT12045L2VR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12045L2VR O-264 APT12045L2VR PDF

    APT10050LVR

    Contextual Info: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050LVR O-264 O-264 APT10050LVR PDF

    Contextual Info: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R5BVR O-247 O-247 30TO-SOURCE PDF

    APT10086BVR

    Contextual Info: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVR O-247 O-247 APT10086BVR PDF

    Contextual Info: APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6025SVR PDF

    Contextual Info: APT12045L2VFR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12045L2VFR O-264 O-264 PDF

    APT12080LVR

    Abstract: 1200v diode
    Contextual Info: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12080LVR O-264 O-264 APT12080LVR 1200v diode PDF

    APT1001RSVR

    Contextual Info: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT1001RSVR APT1001RSVR PDF

    Contextual Info: APT6030BVFR 600V POWER MOS V 21A 0.300W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6030BVFR O-247 O-247 PDF

    APT10M11LVR

    Contextual Info: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR PDF

    APT1001RBVR

    Contextual Info: APT1001RBVR 11A 1.000Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1001RBVR O-247 O-247 APT1001RBVR PDF

    APT1001RBVFR

    Contextual Info: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT1001RBVFR O-247 O-247 APT1001RBVFR PDF

    APT20M45SVFR

    Contextual Info: APT20M45SVFR 56A 0.045Ω 200V POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT20M45SVFR MIL-STD-750 APT20M45SVFR PDF

    APT10086BVR

    Contextual Info: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVR O-247 O-247 APT10086BVR PDF

    Contextual Info: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6011B2VFR MIL-STD-750 PDF

    Contextual Info: APT10086SVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086SVR PDF

    Contextual Info: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS


    Original     		APT6015JVFR E145592 OT-227 PDF

    APT20M22LVR

    Contextual Info: APT20M22LVR 200V 100A 0.022Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M22LVR O-264 O-264 APT20M22LVR PDF

    APT20M38BVFR

    Contextual Info: APT20M38BVFR 67A 0.038Ω 200V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT20M38BVFR O-247 O-247 APT20M38BVFR PDF