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    MOS TECHNOLOGY INC Search Results

    MOS TECHNOLOGY INC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM9513ADIB
    		Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    ICL7667MJA/883B
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy
    CA3130T
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130AT/B
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy

    MOS TECHNOLOGY INC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    power bjt advantages and disadvantages

    Abstract: advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages linear cmos logic advantages of a bjt amplifier polysilicon resistor fabrication BJT amplifiers Cmos not gate high frequency
    Contextual Info: Silicon Gate CMOS Linear Technology Introduction Historically, MOS technology has been the domain of the digital designer. Analog designers might use MOS transistors for the input stage of a high input impedance operational amplifier or use discrete MOS transistors in


    Original     		PDF

    Contextual Info: Vishay Intertechnology, Inc. RECTIFIERS TMBS IN SMPA Very Low Profile Typical Height of 0.95 mm, Trench MOS Barrier Schottky Technology TMBS® IN SMPD Very Low Profile Typical Height of 1.7 mm, Trench MOS Barrier Schottky Technology TMBS® IN SlimSMA Very Low Profile


    Original     		AEC-Q101 VMN-MS6928-1505 PDF

    Contextual Info: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6015LVFR O-264 O-264 PDF

    Contextual Info: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6011LVFR O-264 O-264 PDF

    APT6015JVFR

    Contextual Info: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS


    Original     		APT6015JVFR E145592 OT-227 APT6015JVFR PDF

    Contextual Info: APT12045L2VR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12045L2VR O-264 APT12045L2VR PDF

    APT10050LVR

    Contextual Info: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050LVR O-264 O-264 APT10050LVR PDF

    Contextual Info: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R5BVR O-247 O-247 30TO-SOURCE PDF

    APT10086BVR

    Contextual Info: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVR O-247 O-247 APT10086BVR PDF

    Contextual Info: APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6025SVR PDF

    Contextual Info: APT12045L2VFR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12045L2VFR O-264 O-264 PDF

    APT12080LVR

    Abstract: 1200v diode
    Contextual Info: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12080LVR O-264 O-264 APT12080LVR 1200v diode PDF

    APT1001RSVR

    Contextual Info: APT1001RSVR 11A 1.000Ω 1000V POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT1001RSVR APT1001RSVR PDF

    Contextual Info: APT6030BVFR 600V POWER MOS V 21A 0.300W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6030BVFR O-247 O-247 PDF

    APT10M11LVR

    Contextual Info: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR PDF

    APT1001RBVR

    Contextual Info: APT1001RBVR 11A 1.000Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1001RBVR O-247 O-247 APT1001RBVR PDF

    APT1001RBVFR

    Contextual Info: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT1001RBVFR O-247 O-247 APT1001RBVFR PDF

    APT20M45SVFR

    Contextual Info: APT20M45SVFR 56A 0.045Ω 200V POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT20M45SVFR MIL-STD-750 APT20M45SVFR PDF

    APT10086BVR

    Contextual Info: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVR O-247 O-247 APT10086BVR PDF

    Contextual Info: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6011B2VFR MIL-STD-750 PDF

    Contextual Info: APT10086SVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086SVR PDF

    Contextual Info: APT6015JVFR 600V POWER MOS V 35A 0.150W FREDFET S S ® Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS


    Original     		APT6015JVFR E145592 OT-227 PDF

    APT20M22LVR

    Contextual Info: APT20M22LVR 200V 100A 0.022Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M22LVR O-264 O-264 APT20M22LVR PDF

    APT20M38BVFR

    Contextual Info: APT20M38BVFR 67A 0.038Ω 200V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original     		APT20M38BVFR O-247 O-247 APT20M38BVFR PDF