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    MOS TECHNOLOGY INC Search Results

    MOS TECHNOLOGY INC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SATDRIVEX2-002
    		Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m PDF
    CS-SATDRIVEX2-000.5
    		Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m PDF
    CS-SATDRIVEX2-001
    		Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m PDF
    CS-SASDDP8282-000.5
    		Amphenol Cables on Demand Amphenol CS-SASDDP8282-000.5 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 0.5m PDF
    CS-SASDDP8282-001
    		Amphenol Cables on Demand Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m PDF

    MOS TECHNOLOGY INC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    power bjt advantages and disadvantages

    Abstract: advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages linear cmos logic advantages of a bjt amplifier polysilicon resistor fabrication BJT amplifiers Cmos not gate high frequency
    Contextual Info: Silicon Gate CMOS Linear Technology Introduction Historically, MOS technology has been the domain of the digital designer. Analog designers might use MOS transistors for the input stage of a high input impedance operational amplifier or use discrete MOS transistors in


    Original     		PDF

    Contextual Info: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6015LVFR O-264 O-264 PDF

    Contextual Info: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6011LVFR O-264 O-264 PDF

    Contextual Info: APT12045L2VR 1200V 28A 0.450Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT12045L2VR O-264 APT12045L2VR PDF

    APT10050LVR

    Contextual Info: APT10050LVR 21A 0.500Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10050LVR O-264 O-264 APT10050LVR PDF

    Contextual Info: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R5BVR O-247 O-247 30TO-SOURCE PDF

    APT10086BVR

    Contextual Info: APT10086BVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086BVR O-247 O-247 APT10086BVR PDF

    Contextual Info: APT6025SVR 600V 25A 0.250W POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6025SVR PDF

    Contextual Info: APT6030BVFR 600V POWER MOS V 21A 0.300W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6030BVFR O-247 O-247 PDF

    APT50M80B2VFR

    Abstract: ED 58A
    Contextual Info: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT50M80B2VFR Current031) MIL-STD-750 APT50M80B2VFR ED 58A PDF

    APT10M11LVR

    Contextual Info: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10M11LVR O-264 O-264 APT10M1LVR APT10M11LVR PDF

    APT1001RBVR

    Contextual Info: APT1001RBVR 11A 1.000Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1001RBVR O-247 O-247 APT1001RBVR PDF

    Contextual Info: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6011B2VFR MIL-STD-750 PDF

    Contextual Info: APT10086SVR 13A 0.860Ω 1000V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10086SVR PDF

    APT20M22LVR

    Contextual Info: APT20M22LVR 200V 100A 0.022Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT20M22LVR O-264 O-264 APT20M22LVR PDF

    APT8030LVR

    Contextual Info: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		APT8030LVR O-264 O-264 APT8030LVR PDF

    APT1201R6BVR

    Contextual Info: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1201R6BVR O-247 O-247 APT1201R6BVR PDF

    Contextual Info: APT6025SVR 600V 0.250W 25A POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6025SVR Continuou632) PDF

    Contextual Info: APT1001R1AVR 1000V 9A 1.100W POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT1001R1AVR O-204AE) PDF

    Contextual Info: APT6017WVR 600V 31.5A 0.170Ω POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT6017WVR O-267 O-267 PDF

    APT5010LVFR

    Contextual Info: APT5010LVFR 47A 0.100Ω 500V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT5010LVFR O-264 O-264 APT5010LVFR PDF

    Contextual Info: APT10057WVR 17.3A 0.570Ω 1000V POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT10057WVR O-267 O-267 PDF

    apt5010

    Contextual Info: APT5010JVRU2 44A 0.100Ω 500V POWER MOS V K S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT5010JVRU2 OT-227 E145592 apt5010 PDF

    74 diode

    Contextual Info: APT5026HVR 500V 18.5A 0.260Ω POWER MOS V TO-258 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		APT5026HVR O-258 O-258 74 diode PDF