MODEL 405 Search Results

crystal 26 Mhz package 2 x 6

Abstract: GSM TCXO ocxo cts TCXO STRATUM 7 X 5 3E-15,0 bts gsm crystal 3 x 6 TCXO 1 ppm dil mp 20 IEEE-1588
Contextual Info: CTS Electronic Components Frequency Control Products Short Form Catalog August 28, 2008 Crystal Resonators Model Name Description Model 425 Low Cost SMT Quartz Crystal Model 403 Model 405 Model 406 Model 407 ATS-SM Series Low Cost SMT Quartz Crystal Picture

SMT 60-30

Abstract: BTS 132 SMD TCXO STRATUM 7 X 5 VCT2000 MXO45 MXO45HS MXO45HSLV MXO45LV BTS 824 comparison CMOS TTL supply voltage
Contextual Info: CTS Electronic Components Frequency Control Products Short Form Catalog March 15, 2007 Crystal Resonators Model Name Model 403 Model 405 Model 406 Model 407 ATS-SM Series Description Low Cost SMT Quartz Crystal Picture Frequency Range 13 - 50 Calibration Tolerance

SPECTROL trimmer 63M

Abstract: 202F 500R T607 T614 T640 SPECTROL 63 SPECTROL trimmer 63s spectrol model 200 Spectrol RELIANCE
Contextual Info: idei 63 model 63 model 63 model 63 model 63 model 63 model 63 model 63 model 63 model 63 model 63 model 63 model 63 model 63 mode M L, M B lt B ARROW ANO GRADUATIONS FOR REPEATABLE SETTINGS FLAME RETARDENT HOUSING TO UL RATED VO 'O' RING SEAL FOR SOLVENT AND AQUEOUS WASHING

Spectrol potentiometer 357

Abstract: model 357 spectrol Spectrol RELIANCE SN3 357 357 potentiometer Spectrol potentiometer 10k ohm SPECTROL* potentiometer 50K single turn potentiometer Spectrol potentiometer 502 potentiometer 102 5K
Contextual Info: odel 357 model 357 model 357 model 357 model 357 model 357 model 357 model 357 model 357 model 357 model 357 model 357 model 357 model 3 M in • in » . . « . « . » ! ' mi.im.ind lectrol m MODEL 357 T he M odel 3 5 7 is a 7/a" diameter single turn conductive plastic potentiometer. W ith its compact size; advanced design

Spectrol RELIANCE

Abstract: SPECTROL 248 249 Spectrol 249 10KKUK 250R 500R B 504 Potentiometers M248
Contextual Info: model 248/249 model 248/249 model 248/249 model 248/249 model 248/249 model 248/249 model 248/249 model 248/249 model 248/249 MODEL 248/249 B ased on the highly successful MODEL 1 48/14 9 series, the MODEL 2 4 8 /2 4 9 retains the proven high performance characteristics

CTS CB3

Abstract: M635 CTS OSCILLATORS
Contextual Info: ELECTRONIC COMPONENTS Crystal Resonators www.ctscorp.com/components Model 403 Model 405 ATS-SM Series Model 425 Package: Frequency: Range Tolerance: Stability: Temperature: Range Aging: Package: Frequency: Range Tolerance: Stability: Temperature: Range Aging:

c405d

Contextual Info: R Chapter 1 Timing Models Summary The following topics are covered in this chapter: • Processor Block Timing Model • Rocket I/O Timing Model • CLB / Slice Timing Model • Block SelectRAM Timing Model • Embedded Multiplier Timing Model • IOB Timing Model

Contextual Info: Model 405 Series Linear Actuation, Low Cost Conductive Plastic Precision Potentiometer / Position Sensor MODEL STYLES AVAILABLE Model # Shaft Termination Style Weight grams 405 1/8” plain Wire Leads 28 + (16 x mechanical travel) ELECTRICAL1 Resistance Range

Contextual Info: Crystals SMD CRYSTALS Models Package Frequency Range Frequency Tolerance @25°C Frequency Stability Operating Temperature Aging ESR Load Capacitance Standard Packaging RoHS Compliant MODEL 403 MODEL 405 MODEL 406 2.5 x 3.2 x 0.8mm 13 TO 50 MHz 403C35 = +/- 30ppm

Contextual Info: Engineering Development Model Directional Coupler ADC-ED10254 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

BOURNS 3590S

Abstract: H-46-6M 26.6M 3541h S9019 H-46-6A 69108 H-22 H-22-3A H-22-6A
Contextual Info: Dials & Precision Potentiometers P E R F E C T O U P L E S Model H-22 Model 3590 Model H-46 Model 3540 Introducing Two New Turns-Counting Dials Full Metal Precision-Counting Dial FEATURES • ■ ■ ■ ■ Model H-46 Part Number H-46-6A H-46-6M Accepts Shaft

Contextual Info: Engineering Development Model Voltage Controlled Oscillator ROS-EDR6111/1 Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

CH-8712

Abstract: Pyroelectric Detectors
Contextual Info: Model 405 High Gain Thermally Compensated Pyroelectric IR Detector Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 405 consists of two lithium tantalate sensing elements, a load

Si4178DY

Contextual Info: SPICE Device Model Si4178DY Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

OJ500-M1K-E23

Abstract: RT2x100 OCT300-M1K-N2 Ultrasonic Sensors ORR80 OSP18A oJ-50 Model M30X1/2 NPT-ultra opus Pepperl Fuchs
Contextual Info: Main Menu Table of Contents Model Number Index Accessories Photoelectric and Ultrasonic Sensors Reflectors OFR70 ORR50 ORR80 Replacement Lens Model Number OTS18 for use with mini limit switch style sensors OJ500-M1K-E23/E01 Model No. and OCT300-M1K-N2. OTS18

Contextual Info: SPICE Device Model SiS407DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

63210

Contextual Info: SPICE Device Model Si3424CDV Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

9435

Abstract: CIRCUIT DIAGRAM 7404 VLCF5028 VLCF5020 33594 7404 VLCF5020T-100M1R1-1 27820 VLCF5020-1 VLCF5020T-150MR90-1
Contextual Info: TDK Equivalent Circuit Model Library Jan. 13, 2009 Model Type: Simple Model Inductors / VLCF5020 Series Circuit Diagram Circuit Parameters Part No. L1[uH] R1[ohm] C1[pF] R2[ohm] VLCF5020T-1R8N2R0 1.8 2675.5 1.1630 0.049 VLCF5020T-2R7N1R7 2.7 3653.6 1.1207

MMZ1005B601C

Abstract: MMZ1005D330C mmz1005y601c MMZ1005B121C MMZ1005B800C MMZ1005S102C MMZ1005S121C MMZ1005S241C MMZ1005S601C MMZ1005S800C
Contextual Info: TDK Equivalent Circuit Model Library Dec. 03, 2007 Model Type: Simple Model Ferrite Beads / MMZ1005 Series Circuit Diagram Circuit Parameters Part No. R1[ohm] L1[uH] C1[pF] R2[ohm] MMZ1005B800C 100 0.7 0.38 0.16 MMZ1005B121C 150 1 0.4 0.21 MMZ1005B601C 670

Contextual Info: SPICE Device Model Si2301CDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si3424CDV www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

67370

Contextual Info: SPICE Device Model Si8469DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiS407DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si4178DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C