MO-193 FOOTPRINT Search Results

solder paste alpha WS609

Abstract: WS609 TSSOP YAMAICHI SOCKET Alpha WS609 Yamaichi Electronics ic51-0142 cc fuji CM92 DELL PWB mutual capacitance touch screens 2000 MO-193
Contextual Info: TVSOP Application Brief August 1996 draft 1.2 SCBA009A List of Revisions Draft 1.00 Draft 1.01 Draft 1.20 Initial Issue Minor formatting changes Rename to Application Brief, change JEDEC registration number references to MO-193 for all TVSOP, update thermal graphs, delete

Alpha WS609

Abstract: Yamaichi TQFP 244 MO-194AA MO-193 MO-194 tssop 16 exposed pad stencil Alpha WS609 solder TSSOP YAMAICHI SOCKET MO-194AC SN74LVC16xxx
Contextual Info: TVSOP Application Brief December 1996 SCBA009B List of Revisions Draft 1.00 Draft 1.01 Draft 1.20 Draft 1.3 Initial Issue Minor formatting changes Rename to Application Brief, change JEDEC registration number references to MO-193 for all TVSOP, update thermal graphs, delete

B4-0503SS

Abstract: B4-0505SS B4-0512SS B4-1203SS B4-1205SS B4-1209SS B4-1212SS B4-2403SS 1209SS LF
Contextual Info: B4 LF - Series 0.6 to 1.5 Watt Isolated DC-DC Converter Single Regulated Output 1 . Features λ 7 Pin SIL / 14 Pin DIL Package λ Low Ripple and Noise λ Input / Output Isolation 1K Vdc or 3K Vdc λ 100% Burn-In λ Input Filter with Internal Capacitor λ Custom Design Available

Contextual Info: LTC2051/LTC2052 Dual/Quad Zero-Drift Operational Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Maximum Offset Voltage of 3 V Maximum Offset Voltage Drift of 30nV/°C Small Footprint, Low Profile MS8/GN16 Packages Single Supply Operation: 2.7V to ±5.5V

LTC2051

Abstract: LTC2051HV LTC2052 S14 MSOP
Contextual Info: LTC2051/LTC2052 Dual/Quad Zero-Drift Operational Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Maximum Offset Voltage of 3 V Maximum Offset Voltage Drift of 30nV/°C Small Footprint, Low Profile MS8/GN16 Packages Single Supply Operation: 2.7V to ±5.5V

051hvh

Abstract: LTC2051HVCDD LTC2052HVHS LTC2051 LTC2051HV LTC2052 LTC2051HVIMS10
Contextual Info: LTC2051/LTC2052 Dual/Quad Zero-Drift Operational Amplifiers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Maximum Offset Voltage of 3 V Maximum Offset Voltage Drift of 30nV/°C Small Footprint, Low Profile MS8/GN16 Packages Single Supply Operation: 2.7V to ±5.5V

Contextual Info: OIXYS PRELIMINARY DATA SHEET IXGH28N30 IXGH28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C

Contextual Info: PRELIMINARY DATA SHEET vCES IXGH20N30 IXGH20N30S HiPerFAST IGBT ^C25 VCE sat typ t < Symbol Test Conditions VCES ^ VCGR vGES VœM > Maximum Ratings = 25°C to 150°C 300 V Tj = 25°C to 150°C; RGE = 1 MO 300 V Continuous ±20 V Transient ±30 V Tc = 25° C

X24C16

Abstract: X4163
Contextual Info: Recommended System Management Alternative: X4163 X24C16 16K 2048 x 8 Bit Serial EEPROM DESCRIPTION • 2.7V to 5.5V power supply • Low power CMOS —Active read current less than 1 mA —Active write current less than 3 mA —Standby current less than 1µA

Contextual Info: PRELIMINARY DATASHEET HiPerFAST IGBT IXGH40N30A IXGH40N30AS V C ES ^C25 V C E sat t. = 300 V = 60 A = 2.1 V = 120 ns TO -247 SMD (40N 30A S ) T, = 25°C to 150°C; RGE = 1 MO 300 Continuous ±20 Transient ±30 T c = 25 °C 60 T c = 90 °C 40 I, T SSOA

28N30B

Contextual Info: DIXYS IXGH 28N30B IXGT 28N30B HIPerFAST IGBT VCES ^C25 V CE sat typ trfi(typ,i /K • Symbol ~ 300 56 2.1 55 V A V ns TO-247 AD Test Conditions : 25° C to 150=C V CES v OCR T, V Continuous =2 5 ° C to 150°C; R . 1 MO (TAB) Transient T c = 2 5 °C ^C90

Contextual Info: O IX Y S PRELIMINARY DATA SHEET IXGH28N30B IXGH28N30BS HiPerFAST IGBT vCES ^C25 vCE sat typ *fl(typ) Symbol Test Conditions V CES T j = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V Tc = 25° C

ixys ml 075

Abstract: TXYS aj 312
Contextual Info: HiPerFET Power MOSFETs IXFH26N50Q IXFT26N50Q VD S S ^D25 trr <250 ns N-Channel Enhancement Mode AvalancheRated Low Qg,High dv/dt vDSS VDGR Vss vGSM Test Conditions Maxim um R atings Tj = 25°C to 150°C 500 V TJ = 25°C to 150°C; RGS= 1 MO 500 V Continuous

Contextual Info: OIXYS PRELIMINARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C

Contextual Info: • lililí! Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode v0E, u, CE sat typ Combi Pack ^fi(typ) 500 V 44 A 2.1 V 55 ns TO-247SMD* Symbol Test Conditions VCES VCOR Jj 25°C to 150°C T,J = 25°C to 150°C; Rb t VGES VQEM Continuous

40N30BD1

Contextual Info: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o

13n10

Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS

D 819

Contextual Info: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V

Contextual Info: ST72324Bxx 8-bit MCU, 3.8 to 5.5 V operating range with 8 to 32 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI Features Memories • 8 to 32 Kbyte dual voltage High Density Flash HDFlash or ROM with readout protection capability. In-application programming and Incircuit programming for HDFlash devices

use with ipa pc5 pe 2030

Abstract: LQFP32 LQFP44 SDIP32 SDIP42 ST72324BJ2 ST72324BJ4 ST72324BJ6 ST72324BK2 ST72324BK4
Contextual Info: ST72324Bxx 8-bit MCU, 3.8 to 5.5 V operating range with 8 to 32 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI Features Memories • 8 to 32 Kbyte dual voltage High Density Flash HDFlash or ROM with readout protection capability. In-application programming and Incircuit programming for HDFlash devices

30N30

Abstract: 96542B
Contextual Info: HiPerFAST IGBT IXGH30N30 IXGH30N30S vCES *C25 VCE sat 300 60 1.6 180 V A V ns Preliminary data Symbol Test Conditions VCES Tj = 25°Cto150°C 300 V vCGR ^ = 25°Cto150°C; RGE = 1 MO 300 V vGES Continuous ±20 V VGEM Transient ±30 V 60 A 30 A 120 A Maximum Ratings

32n50

Contextual Info: DIXYS HiPerFET Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family VDSS ^D25 500 V 500 V 30 A 32 A D DS on 0.16 Q 0.15 £2 trr <250 ns Preliminary data Symbol v DOR v r . VGSM Test Conditions Tj= 25° C to 150° C

GV1 M10

Abstract: TPC842 A7 B14
Contextual Info: tlX IU N X XC5200 Field Programmable Gate Arrays August 6,1996 Version 4.01 Preliminary Product Specification Features • Fully supported by XACTstep Development System - Includes complete support for XACT-Performance™, X-BLOX™, Unified Libraries, Relationally Placed

JRC 2100

Abstract: infrared transmitter for pir 325 CSTCE8M00G55A 500Khz ceramic smd resonator ic1 ne555 electronic watchdog using ic1 ne555 JRC 2100 8 pin 5 VOLT buzzer DATASHEET PIR SENSOR stabilization ne555 SMD
Contextual Info: ST72321Rx ST72321ARx ST72321Jx 64/44-pin 8-bit MCU with 32 to 60K Flash/ROM, ADC, five timers, SPI, SCI, I2C interface Features • ■ ■ ■ ■ Memories – 32K to 60K dual voltage High Density Flash HDFlash or ROM with read-out protection capability. In-Application Programming and