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Contextual Info: OIXYS PRELIMINARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C
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SMD ajw
Abstract: ajw smd ajw 35
Contextual Info: □ IXYS PRELIM IN ARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C
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ixgh28n30aixgh28n30as13/10nm/lbo-247+3smd ajwajw smdajw 35
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IXGD32N60B-5X
Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
Contextual Info: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43
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ixgd28n30-43ixgd40n30-5xixgd12n60b-3xixgd31n60-4x+11ixgd41n60-5xixgd60n60-7yixgd200n60b-9xixgd2n100-1mixgd4n100-1tixgd8n100-2lixgd32n60b-5xixgh45n120ixgh24n60bixgh50n60bixgh32n60b
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IXGD40N60A
Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
Contextual Info: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60
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ixgd28n30ixgd40n30ixgd10n60ixgd20n60+13ixgd31n60ixgd30n60ixgd38n60ixgd40n60ixgd60n60ixgd200n60ixgd40n60a1xgh10n60xgh10n60aixgh40n60ixgh50n60a1x57ixgh60n60
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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ixfd50n20ixgd32n60bixfd75n10ixtd5n100+6ixth40n2591x0ixgh25n120aixtd5n100-5tixgd32n60b-5xixgd8n100-2l
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IXGH24N50B
Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
Contextual Info: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500
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ixgd28n30-43ixgd40n30-5xixgd12n60b-33ixgd31n60-4x+13ixgd41n60-5xixgd60n60-7xixgd200n60-9xixgd8n100-2lixgd12n100-33ixgd17n100-4tixgh24n50bixgh50n60bixgh32n60bixgh50n60aixgh24n60a equivalentixgh24n60aixgh17n100
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