MMIC S-BAND AMPLIFIER Search Results

FMM5049

Abstract: S-Band Power Amplifier S-Band high Power Amplifier S-band mmic MMIC POWER AMPLIFIER S-BAND FMM5049VT MMIC s-band amplifier
Contextual Info: FMM5049VT L,S-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=41.0dBm typ. ・High Linear Gain: GL=33.0dB (typ.) ・Broad Band: 1.8~2.3GHz ・Hermetically sealed Package DESCRIPTION The FMM5049VT is a high-gain wide-band three-stage MMIC amplifier

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs MMIC b S HT ö S T DDl ñOTO ÛGS MGF7121 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION OUTLINE DRAWING MGF7121 is a monolithic microwave integrated circuit for use in Unit:millimeters 1,9GHz band power amplifiers. FEATURES • H igh output power

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC b24'ifl2T 001 fl0^3 S U MGF7132P 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION MQF7132P is a monolithic microwave integrated circuit for use in OUTLINE DRAWING UrWmlllimeteis 1.9GHz band power amplifiers. FEATURES •H ig h output power

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5212 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5213 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs MMIC D o l a o s tas MGF7124A 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION MGF7124A is a monolithic microwave integrated circuit for use in 1.9GHz band power amplifiers. FEATURES • H igh output power Po=26dBm,7t/4DQPSK •Sm a ll size

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High

MMIC cross

Contextual Info: SILICON MMIC NEC UPC1685B/G PRELIMINARY Wide-Band Mixer/Oscillator MMIC FE A TU R E S P H Y S IC A L D IM E N S IO N S Units in mm • WIDE-BAND OPERATION: DC to 890 MHz UPC1685B • SMALL PACKAGE • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation

LNA ka-band

Abstract: MITSUBISHI CAPACITOR
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band

vD1A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band

ka-band amplifier

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5218 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5218 is a GaAs MMIC chip especially

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5107 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5107 is a GaAs MMIC chip

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5109 is a GaAs MMIC chip

Contextual Info: bEMSf lST DQlflD'lS 3^4 • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7134P -rv«s' « * * •« ate suW H ^ 2 ta m ^ wriW s""0” 1.90GHz BAND RX^X FRONT-END GaAs MMIC DESCRIPTION MGF7134P is a monolithic microwave integrated circuit for PHS OUTLINE DRAWING

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5214 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Q-Band 2-Stage Power Am plifier DESCRIPTION BLOCK DIAGRAM The MGFC5214 is a GaAs MMIC chip especially

Contextual Info: E AWT918 TX POWER MMIC h m p iG ic s ' A dvanced Product Information Your GaAs IC Source RevO CELLULAR/PCS Dual Band GaAs Power Amplifier 1C DESCRIPTION: The AWT918 is a monolithic GaAs Power Amplifier. It can be used in the following dual band handset applications:GSM900/DCS1800,

Z311

Abstract: MGF7104
Contextual Info: MITSUBISHI D IS CR ET E SC blE ]> □ □ m cÎD2 TME • H I T S ^ Amitsubishi GaAs MMIC MGF7100 SERIES ELECTRONIC DEVICE GROUP 900MHz Band GaAs Power Amplifier IC DESCRIPTION PIN CONFIGURATION (TOP VIEW) MGF7100 Series are monolithic microwave integrated circuits for use in 900MHz band

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Am plifier DESCRIPTION BLOCK DIAGRAM TheM G FC 5110 is a GaAs MMIC chip

Contextual Info: AWT924S10 TX POW ER MMIC Advanced Product Information Rev. 1 G SM /DCS DUAL BAND GaAs POW ER AM PLIFIER IC DESCRIPTION The A W T924 is a monolithic G a A s Power Amplifier. It can be used in the following dual band handset applications: G SM 900/D C S1800.

S858TA3

Abstract: 1s858
Contextual Info: S 858 TA3 TELEFUNKEN Semiconductors Cascadable Silicon Bipolar MMIC Amplifier Electrostatic sensitive device. Observe precautions for handling. Applications General purpose 50 W gain block for narrow and broad band IF and RF amplifiers in commercial and industrial

AC141-00

Contextual Info: WIRELESS - Power Amplifier AWT920 TX POWER MMIC Advanced Product Information Rev 0 900/1900 MHz Dual Band A M P S /P C S GaAs Power Amplifier IC DESCRIPTION: The AWT920 is a highly integrated GaAs monolithic Power Amplifier suited for both AMPS 824 - 849

UPG100B

Abstract: UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz
Contextual Info: I NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 + 0.1 • LOW IMOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz Units in mm 1.27 ± 0-1 0 A {LEAD S 1,3,5,7)