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    MMIC 576 Search Results

    MMIC 576 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    IWR6243ABGABLR
    Texas Instruments 57-GHz to 64-GHz industrial high-performance MMIC 161-FCCSP -40 to 105 Visit Texas Instruments
    AWR1243FBIGABLRQ1
    Texas Instruments 76-GHz to 81-GHz high-performance automotive MMIC 161-FC/CSP -40 to 125 Visit Texas Instruments
    AWR1243FBIGABLQ1
    Texas Instruments 76-GHz to 81-GHz high-performance automotive MMIC 161-FC/CSP -40 to 125 Visit Texas Instruments Buy
    IWR2243APBGABLR
    Texas Instruments 76-GHz to 81-GHz industrial high-performance MMIC 161-FCCSP -40 to 105 Visit Texas Instruments
    IWR2243APBGABL
    Texas Instruments 76-GHz to 81-GHz industrial high-performance MMIC 161-FCCSP -40 to 105 Visit Texas Instruments

    MMIC 576 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the


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    FMM5046VF 36dBm FMM5046VF FCSI0200M200 PDF

    Contextual Info: Preliminary Data Sheet FMS2002QFN 2.2 SP3T Reflective pHEMT MMIC Switch Description The FMS2002QFN is a linear high power Single-Pole Three-Throw MMIC Antenna Switch designed for use in Dual-band handsets GSM900 and GSM1800/1900 combinations. The switch is designed with one antenna port that can be routed to


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    FMS2002QFN FMS2002QFN GSM900 GSM1800/1900 -73dBc PDF

    Contextual Info: NJG1672LK4 SP9T ANTENNA SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1672LK4 is a GaAs SP9T antenna switch IC for GSM/TD-SCDMA multi-band handsets. The IC contains a MMIC switch die with on-chip logic circuits and a LTCC substrate with built-in three LPFs on GSM/TD-SCDMA transmit paths for


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    NJG1672LK4 NJG1672LK4 PDF

    grx2

    Abstract: NJG1672LK4 GSM1800 GSM1900 GSM900 HK1005
    Contextual Info: NJG1672LK4 SP9T ANTENNA SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1672LK4 is a GaAs SP9T antenna switch IC for GSM/TD-SCDMA multi-band handsets. The IC contains a MMIC switch die with on-chip logic circuits and a LTCC substrate with built-in three LPFs on GSM/TD-SCDMA transmit paths for


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    NJG1672LK4 NJG1672LK4 grx2 GSM1800 GSM1900 GSM900 HK1005 PDF

    SNA-576

    Abstract: MMIC 576 110C 155C SNA-500 SNA-576-TR1 SNA-576-TR2 SNA-576-TR3
    Contextual Info: Product Description SNA-576 Stanford Microdevices’ SNA-576 is a GaAs monolithic broadband amplifier housed in a low-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V. DC-3 GHz, Cascadable GaAs MMIC Amplifier


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    SNA-576 SNA-576 SNA-500) MMIC 576 110C 155C SNA-500 SNA-576-TR1 SNA-576-TR2 SNA-576-TR3 PDF

    transistor C110

    Abstract: C110 C165 MP0125 MP0500
    Contextual Info: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com MIS CHIP CAPACITORS Tolerance = +/- 10 % on singles; Binary = +/- 20%. Metallization options: "B" = AuGe attach (backside) and AuSn topside for FET or MMIC Mounting (self bias)


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    MP0125 MP0150 MP0500 72x72 108x108 163x163 75x75 110x110 165x165 transistor C110 C110 C165 MP0125 MP0500 PDF

    Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ES C R IP TIO N The /¿PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.


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    uPC2776TB PC2776TB /iPC2776T /iPC2776TB PC2776T. PDF

    TRANSISTOR BO 345

    Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.


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    UPC2776TB PC2776TB uPC2776TB uPC2776T PC2776T. WS60-00-1 C10535E) TRANSISTOR BO 345 PDF

    MP0402

    Abstract: MP0002 MP0010 MP0022 MP0033 C4 MMIC MP0004
    Contextual Info: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com MIS CHIP CAPACITORS Tolerance = +/- 10 % on singles; Binary = +/- 20%. Metallization options: "A" = AuSn Attach and wire bondable pad "B" = AuGe attach (backside) and AuSn topside for FET or MMIC Mounting (self bias)


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    MP0001 MP0002 MP0003 MP0004 MP0005 MP0010 MP0015 MP0022 MP0033 MP0047 MP0402 MP0002 MP0010 MP0022 MP0033 C4 MMIC MP0004 PDF

    UPC1670C

    Abstract: 574 nec UPC1670 UPC1668 UPC1668B UPC1668C UPC1669 UPC1669B UPC1669C UPC1670B
    Contextual Info: NEC/ SbE D CALIFORNIA NEC • NECC 1,427414 0002b3fl Û37 UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES HIGH ISOLATION SILICON MMIC IF AMPLIFIERS OUTLINE DIMENSIONS FEATURES • HIGH ISOLATION Units in mm OUTLINE B08 • LOW INPUT/OUTPUT RETURN LOSS 1.27±0.1


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    00Q2b3fl UPC1668 UPC1669 UPC1670 UPC1668B, UPC1668C, UPC1670C 574 nec UPC1668B UPC1668C UPC1669B UPC1669C UPC1670B PDF

    H580

    Abstract: HMC580ST89E HMC580ST89
    Contextual Info: HMC580ST89 / 580ST89E v00.1106 AMPLIFIERS - SMT 5 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz Typical Applications Features The HMC580ST89 / HMC580ST89E is an ideal RF/IF gain block & LO or PA driver: P1dB Output Power: +22 dBm • Cellular / PCS / 3G


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    HMC580ST89 580ST89E HMC580ST89E HMC580ST89 H580 PDF

    5609 dec

    Abstract: dec 5609 MLT 22 615 mlt 22 627 001-120 544 mmic ED-4701 FMM5125X
    Contextual Info: FMM5125X 15/60GHz Frequency Multiplier MMIC FEATURES •Input/Output Frequency : 15 / 60 GHz •Wide Frequency Band : 57 - 64 GHz •Conversion Loss : Lc = 5dB Typ. @fout = 60 GHz, Pin = 10 dBm •High Output Power : Po = 5dBm (Typ.) @fout = 60 GHz, Pin = 10 dBm


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    FMM5125X 15/60GHz FMM5125X 1906B, 5609 dec dec 5609 MLT 22 615 mlt 22 627 001-120 544 mmic ED-4701 PDF

    MLT 22 615

    Contextual Info: FMM5125X 15/60GHz Frequency Multiplier MMIC FEATURES •Input/Output Frequency : 15 / 60 GHz •Wide Frequency Band : 57 - 64 GHz •Conversion Loss : Lc = 5dB Typ. @fout = 60 GHz, Pin = 10 dBm •High Output Power : Po = 5dBm (Typ.) @fout = 60 GHz, Pin = 10 dBm


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    FMM5125X 15/60GHz FMM5125X 1906B, MLT 22 615 PDF

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


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    PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book PDF

    SKY65137

    Abstract: S1770 s414 transistor S1383 S413 S414 s2063
    Contextual Info: DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description • IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,


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    SKY65137-11: IEEE802 SKY65137-11 SKY65137-11 64-QAM 200851H SKY65137 S1770 s414 transistor S1383 S413 S414 s2063 PDF

    S1243

    Contextual Info: PRELIMINARY DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description x IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,


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    SKY65137-11: IEEE802 SKY65137-11 20-pin, 200851F S1243 PDF

    circuits metal detector

    Abstract: SKY65137 420 MMIC 802.11a Amplifier METAL DETECTOR circuit for make Microwave detector diodes 18 GHz S1383 S1770 S413 S414
    Contextual Info: DATA SHEET SKY65137-11: Power Amplifier for 802.11a WLAN Applications Applications Description • IEEE802.11a WLAN enabled:  access points  media gateways  set top boxes  LCD TVs Skyworks SKY65137-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power,


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    SKY65137-11: IEEE802 SKY65137-11 SKY65137-11 64-QAM 200851G circuits metal detector SKY65137 420 MMIC 802.11a Amplifier METAL DETECTOR circuit for make Microwave detector diodes 18 GHz S1383 S1770 S413 S414 PDF

    Contextual Info: DP10T Antenna Switch for GSM/UMTS/LTE CXM3548XR Description The CXM3548XR is a DP10T antenna switch for GSM /UMTS/LTE multi-mode handsets. The CXM3548XR has a CMOS SPI interface decoder. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.


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    DP10T CXM3548XR CXM3548XR XQFN-26P PDF

    Contextual Info: DP10T Antenna Switch for GSM/UMTS/LTE CXM3548XR Description The CXM3548XR is a DP10T antenna switch for GSM /UMTS/LTE multi-mode handsets. The CXM3548XR has a CMOS SPI interface decoder. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.


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    DP10T CXM3548XR CXM3548XR XQFN-26P PDF

    CXM3548XR

    Contextual Info: DP10T Antenna Switch for GSM/UMTS/LTE CXM3548XR Description The CXM3548XR is a DP10T antenna switch for GSM /UMTS/LTE multi-mode handsets. The CXM3548XR has a CMOS SPI interface decoder. The Sony GaAs junction gate pHEMT JPHEMT MMIC process is used for low insertion loss and high linearity.


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    DP10T CXM3548XR CXM3548XR XQFN-26P PDF

    FMS2022

    Contextual Info: FMS2022 Advanced Product Information 1.1 DC–4 GHz MMIC SP4T Absorptive Switch Functional Schematic Features: OUT1 GND OUT2 A2 ♦ ♦ ♦ ♦ ♦ Available in die form Suitable for WLAN Applications Low Insertion loss <1.3 dB at 4 GHz typical High isolation >30 dB at 4 GHz typical


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    FMS2022 FMS2022 22-A114-B. MIL-STD-1686 MILHDBK-263. PDF

    FMS2001QFN

    Contextual Info: FMS2001QFN Preliminary Data Sheet 2.2 SPDT Reflective pHEMT MMIC Switch Description The FMS2001QFN is a low loss linear Single-Pole Double-Throw Antenna Switch designed for use in mobile handset applications. The switch is designed with one antenna port that can be routed to any one of the two RF ports.


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    FMS2001QFN FMS2001QFN -70dBc PDF

    60Ghz

    Abstract: FMM5716X ED-4701
    Contextual Info: FMM5716X 60GHz Low Noise Amplifier FEATURES •Low Noise Figure :NF = 5 dB Typ. @ f = 60 GHz •High Associated Gain: |S21| = 22 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5716X is a low noise amplifier MMIC designed for


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    FMM5716X 60GHz FMM5716X 1906B, ED-4701 PDF

    Contextual Info: FMM5715X 60GHz Power Amplifier FEATURES •High Output Power; P1dB = 16 dBm Typ. @ f = 60 GHz •High Linear Gain: |S21| = 17 dB(Typ) @ f = 60 GHz •Wide Frequency Band : 57 - 64 GHz •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION The FMM5715X is a power amplifier MMIC designed for applications


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    FMM5715X 60GHz FMM5715X 1906B, PDF