MMBT27 Search Results

2N3725

Contextual Info: NATL SEfllCOND DISCRETE 22E D • t.SG113Q QG377ÖQ 2 ■ NPN Switching Transistors by Ascending Vceo Vceo (V) Min VCbo (V) Min . Vce(sat) (V) Max @ Ic/lb (niA) Cob (pF) Max Ft (MHz) Max *(otf) (ns) Max MMBT5134 PN5134 10 10 20 20 0.25 0.25 10/1.0 10/1.0

2369A

Contextual Info: National Semiconductor z > Surface Mount Transistors —i r~ /> m Saturated Switches—NPN Type No. Case Style VCES* Vcbo (V Min VcEO (V) Min v EBO (V) Min •ces * •cBOg, Vcb (nA) (V) Max Ic & V ce •»FE Min Max (mA) (V) TO-236 (49) 25 15 5 500 15

mmbt2709

Abstract: MMBT2709A MMBT27 MMBT2907A-2F MMBT2222 MMBT2222A MMBT2907 MMBT2907A MMBT2907 2F
Contextual Info: MMBT2907, MMBT2907A PNP Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-05-04 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1

MMBT2222

Abstract: MMBT2709 MMBT2222A MMBT2709A marking M1P
Contextual Info: MMBT2222 / MMBT2222A MMBT2222 / MMBT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: MMBT2222 / MMBT2222A MMBT2222 / MMBT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN NPN Version 2006-05-15 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

MMBT706A

Abstract: MMBT5134
Contextual Info: This Material National Semiconductor Surface Mount Transistors C/5 m 2 1-4 Saturated Switches—NPN Case S tyle v CEO VEBO V (V) Min Min o Ices * 'CBOg, Vcb (nA) (V) Max @ I c & V ce &FE M in Max (m A) (V) TO-236 (49) 25 15 5 500 15 20 MMBT706A TO-236 (49)