MMBD355 Search Results

Contextual Info: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed

MMBD352

Contextual Info: MMBD101/MMBD352/MMBD353/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE 7.0 Volts POWER 250mWatts SOT-23 Unit：inch mm 0.006(0.15)MIN. FEATURES 0.120(3.04) • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF = 10mA

M6H MARKING sot23

Abstract: MMBD352LT1 MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD353LT3G MMBD354LT1
Contextual Info: MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236 CASE 318 2 Features

Contextual Info: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed

TO-236AB

Abstract: SOT23 marking m5g DIODE M5G
Contextual Info: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

Contextual Info: MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7 Volt 250 mWatt POWER 0.006 0.15 MIN. FEATURES 0.120(3.04) 0.110(2.80) • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF = 10mA

MMBD352LT1

Abstract: MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD354LT1 MMBD355LT1 MMBD353LT3G
Contextual Info: MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes http://onsemi.com These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236

Contextual Info: MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching

M6H MARKING sot23

Abstract: DIODE M5G MMBD355LT1G NSVMMBD353LT1G SOT23 marking m5g Code sot-23 on semiconductor NSVMMBD353 marking M6H SOT-23 m4f e
Contextual Info: MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G http://onsemi.com Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching

Contextual Info: MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts 200 mW POWER FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at I F=10mA • Extremely Fast Switching Speed

Contextual Info: MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250 mW FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at IF=10mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives.

Contextual Info: MMBD101W/MMBD352W/MMBD353W/MMBD354W/ MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Low V F : 0.5V (Typ) at IF=10mA .087(2.2) .078(2.0) Applications .004(.10)MIN.

MMBD352

Abstract: MMBD101 MMBD354
Contextual Info: MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250 mW FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low V F : 0.5V Typ at IF=10mA • Extremely Fast Switching Speed • Lead free in comply with EU RoHS 2002/95/EC directives.

.318 SOT23

Contextual Info: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

M6H MARKING sot23

Abstract: MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 DIODE M5G
Contextual Info: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

MMBD352

Abstract: MMBD101 MMBD353 MMBD354 MMBD355
Contextual Info: MMBD101/MMBD352/MMBD353/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250mWatts FEATURES • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V Typ at IF = 10mA • Extremely Fast Switching Speed

MMBD352LT1

Abstract: MMBD352LT1G MMBD352LT3 MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD353LT3 MMBD354LT1 MMBD355LT1 On semiconductor date Code sot-23
Contextual Info: MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes http://onsemi.com These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236

diode switching

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-23 Package Weight mg 8 Product Group Type No. MMBD352 – MMBD355 BAS70 / A / C / S DAN217, DAP202, DAN202 MMBD101 MMBD717 / A / C / S BAT54 / A / C / S MMBD301 BAS40 / A / C / S

MMBD352LT1

Abstract: MMBD353LT1 MMBD354LT1 MMBD355LT1 MMBD352L
Contextual Info: ON Semiconductort MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts

DIODE M5G

Abstract: MMBD352LT1 MMBD352LT1G MMBD352LT3G MMBD353LT1 MMBD353LT1G MMBD354LT1 MMBD354LT1G MMBD355LT1 MMBD355LT1G
Contextual Info: MMBD352LT1G, MMBD353LT1G, MMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes http://onsemi.com These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 1 SOT−23 TO−236

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

Contextual Info: Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts Typ @ I F = 10 mA

Contextual Info: MMBD352 / 353 / 354 / 355 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications