MM GLASS LENS PHOTOTRANSISTOR Search Results

Contextual Info: Phototransistors PNZ106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs typ. Narrow directional sensitivity for effective use of light input

PN107

Abstract: PN108 PNZ0108 PNZ107 PNZ108
Contextual Info: Phototransistors PNZ107, PNZ108 PN107, PN108 Silicon NPN Phototransistors PNZ107 Unit : mm 4.6 0.15 Glass lens 6.3 0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.)

PNZ0106

Contextual Info: Phototransistors PNZ0106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs typ. Narrow directional sensitivity for effective use of light input

PNZ0107

Abstract: PNZ0108
Contextual Info: Phototransistors PNZ0107, PNZ0108 Silicon NPN Phototransistors PNZ0107 Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs typ. 12.7 min.

Contextual Info: Phototransistors PNA1401L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High sensitivity Wide spectral sensitivity, suited for detecting GaAs LED’s Low dark current : ICEO = 5 nA typ.

phototransistor visible light

Abstract: PNZ109L
Contextual Info: Phototransistors PNZ109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting

PN106

Abstract: PNZ106 npn phototransistor
Contextual Info: Phototransistors PNZ106 PN106 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs (typ.) Narrow directional sensitivity for effective use of light input

PNZ102

Abstract: PN102
Contextual Info: Phototransistors PNZ102 PN102 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA (typ.)

Contextual Info: Phototransistors PNA1401 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High sensitivity Wide spectral sensitivity, suited for detecting GaAs LED’s Low dark current : ICEO = 5 nA typ.

PN109L

Abstract: PNZ109L
Contextual Info: Phototransistors PNZ109L PN109L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting

PN101

Abstract: PNA1401L
Contextual Info: Phototransistors PNA1401L PN101 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High sensitivity Wide spectral sensitivity, suited for detecting GaAs LED’s Low dark current : ICEO = 5 nA (typ.)

PNZ0102

Contextual Info: Phototransistors PNZ0102 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA typ. 3-ø0.45±0.05

Contextual Info: Phototransistors PNZ102 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA typ. 3-ø0.45±0.05

PN102

Abstract: PNZ102
Contextual Info: Phototransistors PNZ102 PN102 Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current: ICEO = 5 nA (typ.)

KPT811

Abstract: KPT811H TF 5367
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT811H Features • NPN phototransistor packaged in a 3 leads TO-18 for the base connection • Glass lens • Low leak current Dimensions (unit: mm) Applications • Optical switches

PN106

Abstract: PNZ106 L1028
Contextual Info: Phototransistors PNZ106 PN106 Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Fast response: tr = 3.5 µs (typ.) • Narrow directivity characteristics for effective use of light input

Contextual Info: Phototransistors PNZ107 PN107 , PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.) • Narrow directivity characteristics for effective use of light input

PN101

Contextual Info: Phototransistors PNA1401L PN101 Silicon planar type Unit: mm φ4.6±0.15 Glass lens 6.3±0.3 For optical control systems • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current: ICEO = 5 nA (typ.)

PN109L

Abstract: PNZ109L
Contextual Info: Phototransistors PNZ109L PN109L Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Built-in filter to cutoff visible light for reducing ambient light noise

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1401L (PN101) Silicon planar type Unit: mm φ4.6±0.15 Glass lens 6.3±0.3 For optical control systems • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1401L (PN101) Silicon planar type Unit: mm φ4.6±0.15 Glass lens 6.3±0.3 For optical control systems • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs

PNZ108

Abstract: PN107 PN108 PNZ107
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)