PNZ102 Search Results

Contextual Info: Phototransistors PNZ102 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA typ. 3-ø0.45±0.05

PNZ102

Abstract: PN102
Contextual Info: Phototransistors PNZ102 PN102 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current : ICEO = 5 nA (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens M Di ain sc te on na tin nc ue e/ d • Features 12.7 min. • High sensitivity

PN102F

Abstract: PNZ102F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo

PN102F

Abstract: PNZ102F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. M Di ain sc te on na tin nc ue e/ d 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)

PN102

Abstract: PNZ102
Contextual Info: Phototransistors PNZ102 PN102 Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current: ICEO = 5 nA (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs

Contextual Info: Phototransistors PNZ102F PN102F Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)  Wide directivity characteristics

circuit LX-700

Abstract: PNA1401LF PNZ102F
Contextual Info: Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors Unit : mm PNA1401LF ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA typ.

PN102

Abstract: PNZ102
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems M Di ain sc te on na tin nc ue e/ d 6.3±0.3 Glass lens • Features 12.7 min. ue pl d in an c

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102F (PN102F) Silicon planar type For optical control systems Unit: mm φ4.6±0.15 Glass window • Features 12.7 min. 4.5±0.2  Low dark current: ICEO = 5 nA (typ.)  Fast response: tr , tr = 3 µs (typ.)

PNA1401LF

Abstract: PNZ102F
Contextual Info: Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors Unit : mm PNA1401LF ø4.6±0.15 M Di ain sc te on na tin nc ue e/ d 4.5±0.2 For optical control systems Features 12.7 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)