PNZ107 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High sensitivity: IL = 5 mA (min.)  Narrow directivity characteristics for effective use of light input

PN107

Abstract: PN108 PNZ0108 PNZ107 PNZ108
Contextual Info: Phototransistors PNZ107, PNZ108 PN107, PN108 Silicon NPN Phototransistors PNZ107 Unit : mm 4.6 0.15 Glass lens 6.3 0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.)

PN107F

Abstract: PN108F PNZ107F PNZ108F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems

PN107F

Abstract: PN108F PNZ107F PNZ108F Lx 3c paz1
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F φ4.6±0.15 M Di ain sc te on na tin nc ue e/ d 12.7 min. For optical control systems • Features 3° 1. 0± 0.

PN107

Abstract: PNZ107
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

paz1

Contextual Info: Phototransistors PNZ107F PN107F , PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems • Wide directivity characteristics for easy use

Contextual Info: Phototransistors PNZ107 PN107 , PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.) • Narrow directivity characteristics for effective use of light input

PNZ107F

Abstract: PNZ108F LX400
Contextual Info: Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use

PN107F

Abstract: PN108F PNZ107F PNZ108F
Contextual Info: Phototransistors PNZ107F, PNZ108F PN107F, PN108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use

PNZ108

Abstract: PN107 PN108 PNZ107
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F 4.5±0.2 • Features 2.45±0.25 2 0. di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems

phototransistors

Contextual Info: Phototransistors PNZ107, PNZ108 Silicon NPN Phototransistors PNZ107 Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs typ. 12.7 min. High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107), PNZ108 (PN108) Silicon planar type PAZ107 Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens • High sensitivity: ICE(L) = 5 mA (min.)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

PHOTO TRANSISTOR 940nm to-18

Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Contextual Info: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)