MK 4027 Search Results

4116 ram

Abstract: RAM 4116 4116 16k ram 4116 4116 dynamic ram AT328 4116 MEMORY ci tc 4027 1/4116 16k ram mostek 4116
Contextual Info: MOSTEK 16,384 X 1 Bit Dynamic Ram MK 4116P-2/3 FEATURES □ Recognized industry standard 16-pin config­ uration from MOSTEK □ Common I/O capability using "early write" operation □ 150ns access time, 375ns cycle MK 4116-2 200ns access time, 375ns cycle (MK 4116-3)

4027 ram

Abstract: 4096X1 4027 pin diagram CD 4027 MK4027 MK4027-1 MK4027-2 MK4027-3 4096X1-BIT MK4096
Contextual Info: MOSTEK 4096x1-BIT DYNAMIC RAM M K 40 27 J/N -2/3 FEATURES □ Industry standard configuration □ 120ns access time, 150ns access time, 200ns access time, □ Improved performance w ith "gated CAS", "RAS o n ly " refresh and page mode capability 16-pin DIP (MK 4096)

1k ohm resistor

Abstract: MK4116 vqb 71 mos inverter mostek 4116
Contextual Info: MOSTEK TERMINAL CHARACTERISTICS OF THE MK4116 INPUT PROTECTION CIRCUIT A ll signal inputs to the MK 4116 have the input protection circu it shown in Figure 1 integrated onto the chip. The purpose o f the circu it is to protect the device from damage caused by static voltages that

MOSTEK 36000

Abstract: 3861 mostek MK2408P MK2500P
Contextual Info: CONTENTS I. Functional/Numerical Index II. Shift Registers III. Read Only Memories 16K ROMs 32K ROMs 64K ROMs Programmable ROMs Random Access Memories 4K Dynamic RAMs 16K Dynamic RAMs 4K Static RAMs IV. V. Application Information VI. Packaging VII. Reliability Information

MOSTEK MEMORY

Abstract: k411 74S04 74S158 74S37 MK4027 MK4116 RAM 4116 4027 pin diagram
Contextual Info: MOSTEK COMPATIBLE MK4027 AND MK4116 MEMORY SYSTEM DESIGNS INTRODUCTION Memory Systems design is very much like any other interface design. It requires knowledge o f the system being interfaced to and also an in-depth knowledge o f the resource being interfaced. This in-depth

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

diode SY 192

Abstract: KP902A Datenblattsammlung Halbleiterbauelemente DDR VEB mikroelektronik transistor kp mikroelektronik datenblattsammlung "halbleiterwerk frankfurt" KP306a mikroelektronik DDR
Contextual Info: . • M ' - l ä r o u jk 1 U ’i m - í!Í'.>. "lA T T S A M M . 'Q elektronische Bauelemente IWT iO 1/87 I# %# S Die vorliegenden Datenblätter dienen nur zur Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente eingestuften Sortiments«

4027 pin diagram

Abstract: 4027 RAM Mostek MK4027-4 MK4027 MK 4027 MK4096
Contextual Info: MOSTEK » P lI iE iT 4096x 1-BIT DYNAMIC RAM MK4027 J/N -4 FEA TU RES □ Industry standard 16-pin DIP (M K-4096) configuration □ Improved performance with "gated C A S " , " R A S o n ly" refresh and page mode capability □ 250ns access time, 380ns cycle

ON4027

Abstract: MK4116 74537 74537 latch LM 4027 MK 4027 DIODE SCHOTTKY X27 LSI-11 k411 74S04
Contextual Info: MOSTEK COMPATIBLE MK4027 AND MK4116 MEMORY SYSTEM DESIGNS INTRODUCTION Memory Systems design is very much like any other interface design. It requires knowledge of the system being interfaced to and also an in-depth knowledge of the resource being interfaced. This in-depth

PIR CONTROLLER LP 0001

Abstract: MOSTEK 38P70 8401h mil-std-1750 38P70 a00b F9450-15DC 5019 38p70 mostek 3D IC
Contextual Info: v ' : ' C-. • ' S"ñ 3 P A IR Ç H IL D A Schlumberger Company l i C- Ù - 'l O rU L ^ I 001193 jt 1 í¡,cO Preliminary Data Sheet - November 1985 DESCRIPTION y F9450 High-Performance 16-Bit Bipolar Microprocessor Microprocessor Product Built-In Self-Test, Fault Handling, and Abort

Contextual Info: Ltr RoHS Compliant Pb - Lead Free Appr Date Revisions Electrical Specifications: Frequency Range 1.000 to 155.520 ±100 ±50 ±30 ±25 ±5 -10 to +70 -40 to +85 -55 to +125 Temperature Stability Aging per Year Standard Extended Operating Temperature Range

Contextual Info: Ltr RoHS Compliant Pb - Lead Free Appr Date Revisions Electrical Specifications: Frequency Range 0.500 to 156.000 ±100 ±50 ±30 ±25 ±3 -10 to +70 -40 to +85 -55 to +125 Temperature Stability Aging per Year Standard Extended Operating Temperature Range

Contextual Info: RoHS Compliant Pb - Lead Free Ltr Appr Date Revisions Electrical Specifications: Frequency Range 77.000 to 625.000 ±100 ±50 ±25 ±3 0 to +70 -40 to +85 -55 to +125 Frequency Stability over Temperature Aging per Year Standard Extended Operating Temperature Range

Contextual Info: Ltr RoHS Compliant Pb - Lead Free Appr Date Revisions Electrical Specifications: Frequency Range 0.500 to 156.000 ±100 ±50 ±30 ±25 ±3 -10 to +70 -40 to +85 -55 to +125 Temperature Stability Aging per Year Standard Extended Operating Temperature Range

PIR CONTROLLER LP 0001

Abstract: F9450 38P70 F9451 ix 2933 UTC 2025 B 1F33 IC 4027 pin diagram A001 A009
Contextual Info: W û ;- F' ¿I S 'W F A IR C H IL D A Schlumberger Company y? O a x ¿i f S c^ 00U 93 , I 1^.3 Preliminary Data Sheet - November 1985 y (i* — - F9450 High-Performance 16-Bit Bipolar Microprocessor Microprocessor Product • Built-In Self-Test, Fault Handling, and Abort

2CSC400002D0208

Abstract: 12v 200 ohm 1c/o relay MTME-485-SUI-LCD-96 ABB RD2 earth leakage relay ANR96 ANR96-230 LEONE RELAY 12V 20A 5v 100 ohm 1c/o relay ABB anr96 MTME-485-LCD-96
Contextual Info: In consideration of modifications to Standards and materials, the characteristics and overall dimensions indicated in this catalogue may be considered binding only following confirmation by ABB Copyright 2010 ABB. All right reserved. System pro M compact and other modular devices for low voltage installation

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

itt 4116

Abstract: itt capacitors 4116 memory 4116 ITT IC 4027 pin diagram 4116 4027 itt ITT SEMICONDUCTORS ITT4
Contextual Info: ITT4116 16384-Bit Dynamic Random Access Memory 7-8 PHONb: 415 961-8121 TWX: (910) 379-6497 1121 SAN ANTONIO ROAD PALO ALTO, CALIF. 94303 TTT * 1 semiconductors * ITT4116 16384-Bit Dynamic Random Access Memory Features - Industry standard 16 pin DIP - 150 ns access time (ITT 4116-2)

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES