MJE 280 POWER TRANSISTOR Search Results

bf500

Abstract: ZTX1055A 161627 DSA003762
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve

11744 502

Contextual Info: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz REs Q62702-F1378 1 =C 2=E 3=B Package

t559

Contextual Info: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

MJE 280 power transistor

Abstract: ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1048A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 3 – FEBRUARY 1995

Q62702-F1378

Abstract: MJE 280 power transistor
Contextual Info: BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

VPS05178

Abstract: on BE 187 TRANSISTOR
Contextual Info: BFP 280 NPN Silicon RF Transistor 3
For low noise, low-power amplifiers in mobile communications systems pager, cordless 4 telephone at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR 280 NPN Silicon RF Transistor 3
For low noise, low-power amplifiers in mobile communications systems pager, cordless telephone at collector currents from 0.2 mA to 8 m
fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

MJE 280 power transistor

Abstract: Q62702-F1298 bfr280
Contextual Info: BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

TF-450

Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *

Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs

BFP620F

Abstract: fa 5571 transistor 3884 BFP620F ACs
Contextual Info: BFP620F NPN Silicon Germanium RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability

fa 5571

Abstract: BFP620F transistor 3884
Contextual Info: BFP620F NPN Silicon Germanium RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability

E 94733

Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

E 94733

Abstract: AH-1 SOT23
Contextual Info: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device observe handling precaution!

Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611

Contextual Info: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

bfq81

Abstract: ki12
Contextual Info: SIEMENS BFQ81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. 1=B h Q62702-F1049 O RAs CO BFQ81 ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!

TF-450

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching

80500 TRANSISTOR

Abstract: Vo 80500 TRANSISTOR astec custom power micron fuse resistors Widlar 450FF Bipolar Power Transistor Data Astec Semiconductor 1fa MARKING AS1700-NPN
Contextual Info: AS17xx Semicustom Bipolar Array Features Description Size single tile • 87 x 75 mils Expandability of array (to 2 or 4 tiles) The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is

Contextual Info: BFP620F XYs NPN Silicon Germanium RF Transistor Preliminary data
High gain low noise RF transistor 3
Small package 1.4 x 0.8 x 0.59 mm 2 4
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz
Maximum stable gain

Transistor BC 1078

Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425
Contextual Info: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data
High gain low noise RF transistor 3
Small package 1.4 x 0.8 x 0.59 mm 2 4
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz
Maximum stable gain

Contextual Info: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!