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    MJD2 Search Results

    MJD2 Datasheets (136)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MJD200
    Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF 311.69KB 4
    MJD200
    Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF 45.82KB 5
    MJD200
    Motorola SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS Original PDF 241.41KB 6
    MJD200
    On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power Original PDF 140.79KB 7
    MJD200
    On Semiconductor Complementary Plastic Power Transistors Original PDF 115.34KB 8
    MJD200
    On Semiconductor Complementary Plastic Power Transistors Original PDF 86.11KB 6
    MJD200
    On Semiconductor Complementary Plastic Power Transistor Original PDF 114.76KB 8
    MJD200
    STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF 48.13KB 4
    MJD200
    Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF 162.67KB 3
    MJD200
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 256.74KB 6
    MJD200
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 43.45KB 1
    MJD200
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 36.69KB 1
    MJD200-1
    Motorola SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS Original PDF 241.41KB 6
    MJD200-1
    On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369-07, 3 PIN, BIP General Purpose Power Original PDF 140.79KB 7
    MJD200-1
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 44.09KB 1
    MJD200-1
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 40.75KB 1
    MJD200-1
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 36.69KB 1
    MJD200-D
    On Semiconductor Complementary Plastic Power Transistors NPN-PNP Si Original PDF 114.75KB 8
    MJD200G
    On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power Original PDF 140.79KB 7
    MJD200G
    On Semiconductor Bipolar Power DPAK NPN 5A 25V Original PDF 85.94KB 6
    ...
    SF Impression Pixel

    MJD2 Price and Stock

    onsemi

    onsemi MJD2955T4G

    10 A 60 V PNP Bipolar Power Transistor
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    onsemi MJD243T4G

    4.0 A 100 V NPN Bipolar Power Transistor
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    onsemi MJD2955G

    10 A 60 V PNP Bipolar Power Transistor
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    MJD2955G 960 1
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    onsemi MJD210G

    5.0 A 25 V PNP Bipolar Power Transistor
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    onsemi MJD210T4G

    5.0 A 25 V PNP Bipolar Power Transistor
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    MJD2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


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    mjd210500maqw-r213-001 PDF

    PART NUMBER OF PNP 2A DPAK

    Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


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    mjd210500maqw-r209-019part number of pnp 2a dpak PDF

    MJD253

    Abstract: 1N5825 MJD243 MJD243T4 MJD253T4 MSD6100 SMD310 marking MJD
    Contextual Info: MJD243 NPN , MJD253 (PNP) MJD243 is a Preferred Device Complementary Silicon Plastic Power Transistor DPAK for Surface Mount Applications http://onsemi.com . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage –


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    mjd243mjd253r14525mjd243/d+61n5825mjd243t4mjd253t4msd6100smd310marking mjd PDF

    marking MJD

    Abstract: 1N5825 MJD243 MJD243T4 MJD253 MJD253T4 MSD6100 SMD310 mjd2
    Contextual Info: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK for Surface Mount Applications http://onsemi.com . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage –


    Original
    mjd243mjd253r14525mjd243/d+7marking mjd1n5825mjd243t4mjd253t4msd6100smd310mjd2 PDF

    Contextual Info: MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter


    Original
    mjd200o-252 PDF

    Contextual Info: MJD210 MJD210 D-PACK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector


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    mjd210 PDF

    Contextual Info: MJD243-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.4 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    mjd243-1freq40m PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors MJD2955 TRANSISTOR PNP TO-252 FEATURES y Designed for General Purpose Amplifier and Low Speed Switching Applications y Electrically Simiar to MJD3055 1.BASE y DC Current Gain Specified to10 Amperes


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    o-252mjd2955mjd3055500khz PDF

    MJD253

    Abstract: MJD243G NPN Silicon Power Transistor DPAK 369D MJD243 MJD243T4 MJD243T4G MJD253T4 MJD253T4G
    Contextual Info: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features 4.0 A, 100 V, 12.5 W


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    mjd243mjd253mjd243/dmjd243g+6npn silicon power transistor dpak369dmjd243t4mjd243t4gmjd253t4mjd253t4g PDF

    Contextual Info: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS


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    mjd200mjd210aec-q101mjd200/d PDF

    MJD200

    Contextual Info: MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter


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    mjd200 PDF

    MJDI22

    Contextual Info: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25


    OCR Scan
    mjd340mjd47mjd50mjd13003+6mjd350mjd57311k/12kmjd31mjd31cmjdi22 PDF

    J253G

    Abstract: MJD243G 369D MJD243 MJD243T4 MJD243T4G MJD253 MJD253T4 MJD253T4G dpak-3
    Contextual Info: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


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    mjd243mjd253j253gmjd243g+6369dmjd243t4mjd243t4gmjd253t4mjd253t4gdpak-3 PDF

    MJD2955

    Abstract: MJD3055 MJE2955T MJE3055T
    Contextual Info: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND


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    mjd2955mjd3055o-252mje2955t+1mje3055t PDF

    Contextual Info: MJD2955, MJD2955T4G PNP MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTORS


    Original
    mjd2955njvmjd2955t4gmjd3055njvmjd3055t4g+3mje2955mje3055mjd2955/d PDF

    Contextual Info: MJD2955 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)2.0m¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    mjd2955 PDF

    mje3055

    Abstract: MJE305 mje3055 127 case data
    Contextual Info: MJD2955, MJD2955T4G PNP MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTORS


    Original
    mjd2955njvmjd2955t4gmjd3055njvmjd3055t4g+5mje2955mje3055mjd2955/dmje305mje3055 127 case data PDF

    Contextual Info: SAMSUNG ELECTRONICS INC MJD29/29C 42E D B 7=^4142 000=100=1 fi EBSMGK NPN EPiTAXSAL SILICON TRANSÌSTOR GENERAL PURPOSE AMPLIFIER, LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • Lead Formed for Surface Mount Applications No Suffix


    OCR Scan
    mjd29/29ctip29tip29c200ma PDF

    Contextual Info: MJD243 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    mjd243freq40m PDF

    0035B2

    Abstract: MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T
    Contextual Info: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND


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    mjd2955mjd3055o-252mje2955t+3mje3055t0035b2mje2955t st PDF

    MJD2955

    Contextual Info: MJD2955 NPN MJD3055 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS Features • Pb−Free Packages are Available


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    mjd2955mjd3055mje2955mje3055 PDF

    MJD200

    Contextual Info: MJD200 NPN EPITAXIAL SILICON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - I “ Suffix) 1 ABSOLUTE MAXIMUM RATINGS


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    mjd200 PDF

    Contextual Info: MJD2955 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free Features: 1.BASE 2.COLLECTOR 3.EMITTER * Designed for General Purpose Amplifier and Low Speed Switching Applications * DC Current Gain Specified to 10 Amperes 1 3 2 D-PAK(TO-252) MAXIMUM RATINGS (TA=25ºC unless otherwise noted)


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    mjd2955o-25210-may-2012 PDF

    Contextual Info: MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PACK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ -I “ Suffix) Electrically Similar to Popular MJE2955T


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    mjd2955mje2955t-500ma PDF