MJD2 Search Results
MJD2 Datasheets (136)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| MJD200 | Fairchild Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR | Original | 311.69KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 45.82KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | Motorola | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS | Original | 241.41KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | On Semiconductor | MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power | Original | 140.79KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | On Semiconductor | Complementary Plastic Power Transistors | Original | 115.34KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | On Semiconductor | Complementary Plastic Power Transistors | Original | 86.11KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | On Semiconductor | Complementary Plastic Power Transistor | Original | 114.76KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | STMicroelectronics | COMPLEMENTARY SILICON POWER TRANSISTORS | Original | 48.13KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | Fairchild Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR | Scan | 162.67KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | Motorola | Motorola Semiconductor Data & Cross Reference Book | Scan | 256.74KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 43.45KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 36.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200-1 | Motorola | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS | Original | 241.41KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200-1 | On Semiconductor | MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369-07, 3 PIN, BIP General Purpose Power | Original | 140.79KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200-1 | Motorola | Motorola Semiconductor Data & Cross Reference Book | Scan | 44.09KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200-1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 40.75KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200-1 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 36.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200-D | On Semiconductor | Complementary Plastic Power Transistors NPN-PNP Si | Original | 114.75KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200G | On Semiconductor | MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power | Original | 140.79KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MJD200G | On Semiconductor | Bipolar Power DPAK NPN 5A 25V | Original | 85.94KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJD2 Price and Stock
onsemi MJD2955T4G10 A 60 V PNP Bipolar Power Transistor |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MJD2955T4G | 5,330 |
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Buy Now | |||||||
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MJD2955T4G | Tape & Reel | 5,000 | 2,500 |
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MJD2955T4G | Cut Tape | 1,142 | 5 |
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| MJD2955T4G | Tape & Reel | 1,142 | 100 |
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MJD2955T4G | Bulk | 50 |
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MJD2955T4G | 5,330 |
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MJD2955T4G | 1 |
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MJD2955T4G | 75 |
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MJD2955T4G | 23 Weeks | 5,000 |
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MJD2955T4G | 2,500 | 24 Weeks | 2,500 |
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MJD2955T4G | 25,000 |
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MJD2955T4G | 5,000 | 1 |
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Buy Now | ||||||
onsemi MJD243T4G4.0 A 100 V NPN Bipolar Power Transistor |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MJD243T4G | 5,000 |
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Buy Now | |||||||
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MJD243T4G | Tape & Reel | 15,000 | 42 Weeks | 2,500 |
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MJD243T4G | Cut Strips | 4,740 | 42 Weeks | 1 |
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| MJD243T4G | 2,500 | 42 Weeks | 2,500 |
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MJD243T4G | Cut Tape | 1,111 | 5 |
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Buy Now | |||||
| MJD243T4G | Tape & Reel | 1,111 | 100 |
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Buy Now | ||||||
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MJD243T4G | Bulk | 10 |
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Get Quote | ||||||
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MJD243T4G | 5,000 |
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MJD243T4G | 1 |
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MJD243T4G | 5,000 | 42 Weeks | 5,000 |
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Buy Now | |||||
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MJD243T4G | 30 Weeks | 2,500 |
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Get Quote | ||||||
onsemi MJD2955G10 A 60 V PNP Bipolar Power Transistor |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MJD2955G |
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MJD2955G | 960 | 8 |
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Buy Now | ||||||
| MJD2955G | 835 | 19 |
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MJD2955G | 1,500 | 98 Weeks | 1 |
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| MJD2955G | 960 | 1 |
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Buy Now | |||||||
| MJD2955G | 835 | 1 |
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Buy Now | |||||||
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MJD2955G | Bulk | 1 |
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Get Quote | ||||||
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MJD2955G |
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Buy Now | ||||||||
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MJD2955G | 750 | 1 |
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Buy Now | ||||||
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MJD2955G | 21 | 1 |
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MJD2955G | 248 |
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Get Quote | |||||||
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MJD2955G | 17 Weeks | 75 |
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Get Quote | ||||||
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MJD2955G | 18 Weeks | 75 |
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Get Quote | ||||||
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MJD2955G | 1,590 |
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Get Quote | |||||||
onsemi MJD210G5.0 A 25 V PNP Bipolar Power Transistor |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MJD210G |
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MJD210G | 5,400 | 225 |
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| MJD210G | 3,515 | 1,347 |
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MJD210G | Bulk | 2,638 | 1 |
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MJD210G | Bulk | 1 |
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MJD210G |
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MJD210G | 4,115 | 1 |
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MJD210G | 302 | 1 |
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MJD210G | 3,250 |
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MJD210G | 8 Weeks | 3,225 |
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MJD210G | 40,200 | 30 Weeks | 75 |
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MJD210G | 66 |
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MJD210G | 31 Weeks | 75 |
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MJD210G | 9 | 1 |
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MJD210G | 1,200 | 1 |
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Buy Now | ||||||
onsemi MJD210T4G5.0 A 25 V PNP Bipolar Power Transistor |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MJD210T4G |
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MJD210T4G | 2,500 | 7 |
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Buy Now | ||||||
| MJD210T4G | 825 | 30 |
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MJD210T4G | Tape & Reel | 5,000 | 31 Weeks | 2,500 |
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MJD210T4G | Cut Strips | 2,500 | 1 |
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Buy Now | |||||
| MJD210T4G | Cut Strips | 825 | 31 Weeks | 1 |
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MJD210T4G | Tape & Reel | 5,008 | 100 |
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Buy Now | |||||
| MJD210T4G | Cut Tape | 5,008 | 5 |
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MJD210T4G | Bulk | 10 |
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MJD210T4G |
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MJD210T4G | 6,185 |
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| MJD210T4G | 1,120 | 1 |
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MJD210T4G | 230,035 | 1 |
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MJD210T4G | 1 |
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Get Quote | |||||||
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MJD210T4G | 7,500 |
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Get Quote | |||||||
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MJD210T4G | 24 |
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MJD210T4G | 2,500 | 32 Weeks | 2,500 |
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Buy Now | |||||
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MJD210T4G | 26,000 |
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Get Quote | |||||||
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MJD210T4G | 2,469 | 1 |
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Buy Now | ||||||
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MJD210T4G | 35,000 |
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MJD2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA |
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mjd210500maqw-r213-001 | |
PART NUMBER OF PNP 2A DPAKContextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA |
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mjd210500maqw-r209-019part number of pnp 2a dpak | |
MJD253
Abstract: 1N5825 MJD243 MJD243T4 MJD253T4 MSD6100 SMD310 marking MJD
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mjd243mjd253r14525mjd243/d+6 | |
marking MJD
Abstract: 1N5825 MJD243 MJD243T4 MJD253 MJD253T4 MSD6100 SMD310 mjd2
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mjd243mjd253r14525mjd243/d+7 | |
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Contextual Info: MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter |
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mjd200o-252 | |
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Contextual Info: MJD210 MJD210 D-PACK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector |
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mjd210 | |
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Contextual Info: MJD243-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.4 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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mjd243-1freq40m | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors MJD2955 TRANSISTOR PNP TO-252 FEATURES y Designed for General Purpose Amplifier and Low Speed Switching Applications y Electrically Simiar to MJD3055 1.BASE y DC Current Gain Specified to10 Amperes |
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o-252mjd2955mjd3055500khz | |
MJD253
Abstract: MJD243G NPN Silicon Power Transistor DPAK 369D MJD243 MJD243T4 MJD243T4G MJD253T4 MJD253T4G
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mjd243mjd253mjd243/dmjd243g+6 | |
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Contextual Info: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS |
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mjd200mjd210aec-q101mjd200/d | |
MJD200Contextual Info: MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter |
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mjd200 | |
MJDI22Contextual Info: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25 |
OCR Scan |
mjd340mjd47mjd50mjd13003+6 | |
J253G
Abstract: MJD243G 369D MJD243 MJD243T4 MJD243T4G MJD253 MJD253T4 MJD253T4G dpak-3
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mjd243mjd253j253gmjd243g+6 | |
MJD2955
Abstract: MJD3055 MJE2955T MJE3055T
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mjd2955mjd3055o-252mje2955t+1 | |
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Contextual Info: MJD2955, MJD2955T4G PNP MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTORS |
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mjd2955njvmjd2955t4gmjd3055njvmjd3055t4g+3 | |
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Contextual Info: MJD2955 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)2.0m¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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mjd2955 | |
mje3055
Abstract: MJE305 mje3055 127 case data
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Original |
mjd2955njvmjd2955t4gmjd3055njvmjd3055t4g+5 | |
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Contextual Info: SAMSUNG ELECTRONICS INC MJD29/29C 42E D B 7=^4142 000=100=1 fi EBSMGK NPN EPiTAXSAL SILICON TRANSÌSTOR GENERAL PURPOSE AMPLIFIER, LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • Lead Formed for Surface Mount Applications No Suffix |
OCR Scan |
mjd29/29ctip29tip29c200ma | |
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Contextual Info: MJD243 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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mjd243freq40m | |
0035B2
Abstract: MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T
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Original |
mjd2955mjd3055o-252mje2955t+3 | |
MJD2955Contextual Info: MJD2955 NPN MJD3055 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS Features • Pb−Free Packages are Available |
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mjd2955mjd3055mje2955mje3055 | |
MJD200Contextual Info: MJD200 NPN EPITAXIAL SILICON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - I “ Suffix) 1 ABSOLUTE MAXIMUM RATINGS |
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mjd200 | |
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Contextual Info: MJD2955 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free Features: 1.BASE 2.COLLECTOR 3.EMITTER * Designed for General Purpose Amplifier and Low Speed Switching Applications * DC Current Gain Specified to 10 Amperes 1 3 2 D-PAK(TO-252) MAXIMUM RATINGS (TA=25ºC unless otherwise noted) |
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mjd2955o-25210-may-2012 | |
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Contextual Info: MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PACK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ -I “ Suffix) Electrically Similar to Popular MJE2955T |
Original |
mjd2955mje2955t-500ma | |