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    MJD2 Search Results

    MJD2 Datasheets (136)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MJD200
    Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF 311.69KB 4
    MJD200
    Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF 45.82KB 5
    MJD200
    Motorola SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS Original PDF 241.41KB 6
    MJD200
    On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power Original PDF 140.79KB 7
    MJD200
    On Semiconductor Complementary Plastic Power Transistors Original PDF 115.34KB 8
    MJD200
    On Semiconductor Complementary Plastic Power Transistors Original PDF 86.11KB 6
    MJD200
    On Semiconductor Complementary Plastic Power Transistor Original PDF 114.76KB 8
    MJD200
    STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF 48.13KB 4
    MJD200
    Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF 162.67KB 3
    MJD200
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 256.74KB 6
    MJD200
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 43.45KB 1
    MJD200
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 36.69KB 1
    MJD200-1
    Motorola SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS Original PDF 241.41KB 6
    MJD200-1
    On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369-07, 3 PIN, BIP General Purpose Power Original PDF 140.79KB 7
    MJD200-1
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 44.09KB 1
    MJD200-1
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 40.75KB 1
    MJD200-1
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 36.69KB 1
    MJD200-D
    On Semiconductor Complementary Plastic Power Transistors NPN-PNP Si Original PDF 114.75KB 8
    MJD200G
    On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power Original PDF 140.79KB 7
    MJD200G
    On Semiconductor Bipolar Power DPAK NPN 5A 25V Original PDF 85.94KB 6
    ...
    SF Impression Pixel

    MJD2 Price and Stock

    onsemi

    onsemi MJD243T4G

    TRANS NPN 100V 4A DPAK
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    MJD243T4G Digi-Reel 5,011 1
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    MJD243T4G Reel 5,000 2,500
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    Arrow Electronics () MJD243T4G 7,500 10 Weeks 2,500
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    MJD243T4G Cut Strips 4,567 10 Weeks 1
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    Onlinecomponents.com MJD243T4G 2,500
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    onsemi NVMJD2D7N04CLTWG

    MOSFET N-CH 40V LFPAK56
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    NVMJD2D7N04CLTWG Digi-Reel 3,000 1
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    NVMJD2D7N04CLTWG Reel 3,000 3,000
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    Richardson RFPD NVMJD2D7N04CLTWG 3,000
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    onsemi MJD2955T4G

    TRANS PNP 60V 10A DPAK
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    DigiKey () MJD2955T4G Digi-Reel 2,439 1
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    MJD2955T4G Cut Tape 2,439 1
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    Avnet Americas MJD2955T4G Reel 2,500 8 Weeks 5,000
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    Mouser Electronics MJD2955T4G 7,078
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    Newark MJD2955T4G Cut Tape 5
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    Onlinecomponents.com MJD2955T4G 2,500
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    Bristol Electronics MJD2955T4G 679
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    Rochester Electronics MJD2955T4G 179,471 1
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    onsemi NJVMJD210T4G

    TRANS PNP 25V 5A DPAK
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    DigiKey () NJVMJD210T4G Digi-Reel 1,911 1
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    NJVMJD210T4G Cut Tape 1,911 1
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    onsemi MJD200G

    TRANS NPN 25V 5A DPAK
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    MJD2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


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    MJD210 500mA QW-R213-001 PDF

    PART NUMBER OF PNP 2A DPAK

    Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


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    MJD210 MJD210 500mA QW-R209-019 PART NUMBER OF PNP 2A DPAK PDF

    MJD253

    Abstract: 1N5825 MJD243 MJD243T4 MJD253T4 MSD6100 SMD310 marking MJD
    Contextual Info: MJD243 NPN , MJD253 (PNP) MJD243 is a Preferred Device Complementary Silicon Plastic Power Transistor DPAK for Surface Mount Applications http://onsemi.com . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage –


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    MJD243 MJD253 MJD243 r14525 MJD243/D MJD253 1N5825 MJD243T4 MJD253T4 MSD6100 SMD310 marking MJD PDF

    marking MJD

    Abstract: 1N5825 MJD243 MJD243T4 MJD253 MJD253T4 MSD6100 SMD310 mjd2
    Contextual Info: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK for Surface Mount Applications http://onsemi.com . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage –


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    MJD243 MJD253 r14525 MJD243/D marking MJD 1N5825 MJD243 MJD243T4 MJD253 MJD253T4 MSD6100 SMD310 mjd2 PDF

    Contextual Info: MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter


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    MJD200 O-252 PDF

    Contextual Info: MJD210 MJD210 D-PACK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector


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    MJD210 PDF

    Contextual Info: MJD243-1 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.4 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    MJD243-1 Freq40M PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors MJD2955 TRANSISTOR PNP TO-252 FEATURES y Designed for General Purpose Amplifier and Low Speed Switching Applications y Electrically Simiar to MJD3055 1.BASE y DC Current Gain Specified to10 Amperes


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    O-252 MJD2955 O-252 MJD3055 500KHZ PDF

    MJD253

    Abstract: MJD243G NPN Silicon Power Transistor DPAK 369D MJD243 MJD243T4 MJD243T4G MJD253T4 MJD253T4G
    Contextual Info: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. Features 4.0 A, 100 V, 12.5 W


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    MJD243 MJD253 MJD243/D MJD253 MJD243G NPN Silicon Power Transistor DPAK 369D MJD243 MJD243T4 MJD243T4G MJD253T4 MJD253T4G PDF

    Contextual Info: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS


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    MJD200 MJD210 AEC-Q101 MJD200/D PDF

    MJD200

    Contextual Info: MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter


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    MJD200 MJD200 PDF

    MJDI22

    Contextual Info: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25


    OCR Scan
    MJD340 MJD47 MJD50 MJD13003 MJD350 MJD5731 1k/12k MJD31 MJD31C MJDI22 PDF

    J253G

    Abstract: MJD243G 369D MJD243 MJD243T4 MJD243T4G MJD253 MJD253T4 MJD253T4G dpak-3
    Contextual Info: MJD243 NPN , MJD253 (PNP) Preferred Device Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage −


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    MJD243 MJD253 J253G MJD243G 369D MJD243 MJD243T4 MJD243T4G MJD253 MJD253T4 MJD253T4G dpak-3 PDF

    MJD2955

    Abstract: MJD3055 MJE2955T MJE3055T
    Contextual Info: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND


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    MJD2955 MJD3055 O-252 MJE2955T MJE3055T MJD2955 MJD3055 MJE2955T MJE3055T PDF

    Contextual Info: MJD2955, MJD2955T4G PNP MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTORS


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    MJD2955, NJVMJD2955T4Gâ MJD3055, NJVMJD3055T4Gâ MJE2955 MJE3055 MJD2955/D PDF

    Contextual Info: MJD2955 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)10 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)2.0m¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    MJD2955 PDF

    mje3055

    Abstract: MJE305 mje3055 127 case data
    Contextual Info: MJD2955, MJD2955T4G PNP MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTORS


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    MJD2955, NJVMJD2955T4G MJD3055, NJVMJD3055T4G MJE2955 MJE3055 MJD2955/D MJE305 mje3055 127 case data PDF

    Contextual Info: SAMSUNG ELECTRONICS INC MJD29/29C 42E D B 7=^4142 000=100=1 fi EBSMGK NPN EPiTAXSAL SILICON TRANSÌSTOR GENERAL PURPOSE AMPLIFIER, LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • Lead Formed for Surface Mount Applications No Suffix


    OCR Scan
    MJD29/29C TIP29 TIP29C 200mA PDF

    Contextual Info: MJD243 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    MJD243 Freq40M PDF

    0035B2

    Abstract: MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T
    Contextual Info: MJD2955 MJD3055 COMPLEMENTARY POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T 3 APPLICATIONS GENERAL PURPOSE SWITCHING AND


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    MJD2955 MJD3055 O-252 MJE2955T MJE3055T 0035B2 MJE2955T ST MJD2955 MJD3055 MJE2955T MJE3055T PDF

    MJD2955

    Contextual Info: MJD2955 NPN MJD3055 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS Features • Pb−Free Packages are Available


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    MJD2955 MJD3055 MJE2955 MJE3055 MJD2955 PDF

    MJD200

    Contextual Info: MJD200 NPN EPITAXIAL SILICON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - I “ Suffix) 1 ABSOLUTE MAXIMUM RATINGS


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    MJD200 MJD200 PDF

    Contextual Info: MJD2955 PNP PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free Features: 1.BASE 2.COLLECTOR 3.EMITTER * Designed for General Purpose Amplifier and Low Speed Switching Applications * DC Current Gain Specified to 10 Amperes 1 3 2 D-PAK(TO-252) MAXIMUM RATINGS (TA=25ºC unless otherwise noted)


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    MJD2955 O-252) 10-May-2012 O-252 O-252 PDF

    Contextual Info: MJD2955 MJD2955 General Purpose Amplifier Low Speed Switching Applications D-PACK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ -I “ Suffix) Electrically Similar to Popular MJE2955T


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    MJD2955 MJE2955T -500mA PDF