MJ 2955 DATA Search Results

transistor mj 3055

Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
Contextual Info: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •

NTF2955

Abstract: NTF2955T1 NTF2955T3 50Vds
Contextual Info: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters

2955 sot223

Abstract: NTF2955 NTF2955T1 NTF2955T3 MJ 2955 data 2955 SOT-223 P-channel sot-223
Contextual Info: NTF2955 Power MOSFET −60 V, 2.4 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET

Contextual Info: Preliminary Datasheet RJK03L2DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0779EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: Preliminary Datasheet RJK03L2DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0779EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

2955G

Abstract: NTF2955T1G NTF2955 NTF2955T1
Contextual Info: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Marking 2955

Abstract: MMFT2955ET1 MMFT2955E 2955 mosfet
Contextual Info: MOTOROLA O rder this docum ent by M M FT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount This advanced E -F E T is a TM O S medium pow er M O SFET designed to withstand high energy in the avalanche and com m uta­

VND5T016

Contextual Info: VND5T016ASP-E Double channel high side driver with analog CurrentSense for 24 V automotive applications Datasheet − production data Features Max transient supply voltage VCC 58 V Operating voltage range VCC 8 to 36 V Typ ON-state resistance per ch. RON

VND5T016

Abstract: VND5T016ASP-E 1VND5T016ASP-E W1387 VND5t
Contextual Info: VND5T016ASP-E Double channel high side driver with analog CurrentSense for 24 V automotive applications Datasheet − production data Features Max transient supply voltage VCC 58 V Operating voltage range VCC 8 to 36 V Typ ON-state resistance per ch. RON

VND5T016A

Abstract: VND5T016ASP-E
Contextual Info: VND5T016ASP-E Double channel high side driver with analog CurrentSense for 24 V automotive applications Datasheet − production data Features Max transient supply voltage VCC 58 V Operating voltage range VCC 8 to 36 V Typ ON-state resistance per ch. RON

Contextual Info: N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 mΩ Features General Description „ Shielded Gate MOSFET Technology „ High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that

V753

Abstract: FDMS86200DC
Contextual Info: FDMS86200DC N-Channel Dual CoolTM Power Trench MOSFET 150 V, 28 A, 17 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package

NT 2955 ON transistor

Abstract: Marking 2955 transistor k 4212 fet FT2955E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium P o w er Field E ffe c t T ran sisto r P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M FT2955E M o to ro la P re fe rre d D e v ic e TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM

Contextual Info: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP

NT 2955 ON transistor

Abstract: Marking 2955 MMFT2955ET1 fr 2955 2N3904 AN569 MMFT2955E MMFT2955ET3 SMD310 2955 DPAK
Contextual Info: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

BHC ALS 20a

Abstract: BHC Aerovox BHC Aerovox ALS10 BHC ALS capacitor ALS29 ALS21 aerovox bhc alp 20a BHC Aerovox ALP20 aerovox application notes TD003 BHC AEROVOX ALC20
Contextual Info: INDEX REFERENCE DATA Quick reference guide to Product Range . 2 TECHNICAL DATA Capacitor Construction . 3 Manufacturing Process . 4 Electrical Characteristics . 5-7

IFR 840

Abstract: LCD display jhd 2060 JRC jrc 2740 izuum lcd jhd 4*20 COH10 JHD LCD jrc 2340 jrc 4555
Contextual Info: N J U 6 4 6 1 1 2 tir 2 i r 7 - * « ñ t l f t K » h 7 M J «j 5 7, f» □ - ^ K 9 - í / t • « 5 NJU6461I* X 3 V * M ^ 1 2 « t2 W s W h iW a C O t lW T IB B jT S LCD3JHJ-5K 5-fir 7?, Í ’ » r - * W 5 , 7 'U - J 'JÖ /uC R SälSH lK. 0 7 h V * t 5 W i? l> -*R O M /R A M & tfiÍÍÍÍJE lD /W ' jW 5-ÍH* «

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2