MINTECH SEMICONDUCTORS Search Results

UC1637

Contextual Info: Mintech Semiconductors Ltd 2 Hellesdon Park Road Drayton High Road Norwich Norfolk NR6 5DR England Tel +44 0 1603 788967 Fax +44(0)1603 788920 Email sales@mintech.co.uk Web www.mintech.co.uk 18 17 15 14 13 PAD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

DUL1506

Abstract: DUL1506-AG DUL1506AL DUL1506ALN DUL1506-GG DUL1506S silicon carbide
Contextual Info: August 2009 DUL1506 – 600V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

DUL1504

Abstract: DUL1504-AG DUL1504AL DUL1504ALN DUL1504-GG DUL1504S
Contextual Info: August 2009 DUL1504 – 400V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

DUT1508AL

Abstract: DUT1508ALN DUT1508-GG DUT1508S DUT1508 DUT1508-AG
Contextual Info: August 2009 DUT1508 – 800V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

DUT1507

Abstract: DUT1507-AG DUT1507AL DUT1507ALN DUT1507-GG DUT1507S to-276ab CLIFTON
Contextual Info: August 2009 DUT1507 – 700V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

Mintech Semiconductors

Abstract: M128S32
Contextual Info: M128S32 128K x 32 Fast SRAM Issue 1.0 July 2003 General Description Features The M128S32 is a high reliability 4Mbit fast static ram housed in high temperature co-fired ceramic. Access times are 20, 25 or 35ns, with 15 & 17ns in development. For surface mount applications there

DUL1505

Abstract: DUL1505-AG DUL1505AL DUL1505ALN DUL1505-GG DUL1505S
Contextual Info: August 2009 DUL1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

DUT1506

Abstract: DUT-1506 DUT1506-AG DUT1506AL DUT1506ALN DUT1506-GG DUT1506S DUT-15
Contextual Info: August 2009 DUT1506 – 600V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

DUT1505

Abstract: DUT1505-AG DUT1505AL DUT1505ALN DUT1505-GG DUT1505S silicon carbide
Contextual Info: August 2009 DUT1505 – 500V, 15A Preliminary HIGH EFFICIENCY, TEMPERATURE INDEPENDENT GaAs RECTIFIER DIODE Features General Description High maximum junction temperature; up to +260°C vs. +175°C for silicon diodes Lower and temperature independent dynamic recovery characteristics over the

Mintech Semiconductors

Abstract: M128 D28A0 M128E32 M128E32G-
Contextual Info: M128E32 128K x 32 EEPROM Issue 2.0 June 2004 General Description Features 4 Megabit EEPROM module. Access Times of 120/150/200 ns. Output Configurable as 32/ 16/ 8 bit wide. Upgradeable footprint Operating Power 1600/ 830/ 445 mW Max . Low Power Standby 2.2 mW (Max).

mintech

Contextual Info: M512S32 512K x 32 Fast SRAM Issue 2.0 July 2004 General Description Features The M512S32 is a hi-rel grade16Mbit fast Static RAM multichip module, that is normally organised as 512Kx32 bits wide , but can also be user configured as 1Mx16 or 2Mx8. Access times are available as 20,

Contextual Info: MP1000VS32JC 1M x 32 Fast SRAM PLCC Issue 1.0 December 2005 General Description Features The MP1000VS32JC device is a 1M x 32 SRAM module housed in a 68 Jleaded package which complies with the JEDEC 68 PLCC standard. Access times of 12, 15 or 20 ns are available. The 3V device is

SST511

Contextual Info: SST511 Linear Systems replaces discontinued Siliconix SST511 Current Regulator Diode — POV min 45 V Features: Description: Surface-Mount Package Guaranteed ±20% Tolerance POV (min) 45V Good Temperature Stability The SST511 belongs to a family of ±20% range current

LM358 RF receiver module

Abstract: DS26C31T light sensor lm324 and lm339 in circuit functions light sensor in lm324 and lm339 LM324 temperature controller LM386-1 LM723 LMX2336 detonators functions light sensor in lm324
Contextual Info: N VOLUME NO. 5 2000 THE PROLIFERATION OF DIE PRODUCTS COMMUNICATION SYSTEMS he trend in the electronics industry is toward smaller and lighter with higher performance. Fueling this trend is continuing silicon integration as well as advanced packaging technologies. The ultimate "packaging" technology in terms of supporting

2SK170BL

Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
Contextual Info: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual

LM6462

Abstract: LF411 "direct replacement" LH0032ACG LM6464 LM646 VARIABLE POWER SUPPLY. 0 - 30V, LM723 LM35,3 sensor vhdl 4-bit binary calculator ADC1231 lm2940-8
Contextual Info: N Military/Aerospace Division Product Line Card 1997 N www.national.com/appinfo/milaero/ Table of Contents At National Semiconductor , it’s about innovation. One of the largest suppliers of IC products for high reliability applications, we’ve provided analog and mixedsignal engineering for the Military/Aerospace market for more than 30 years. Our expertise in system design and