MIL-STD-750 METHOD 2036 Search Results

MIL-STD-750

Abstract: MIL-STD-750C
Contextual Info: HIGH RELIABILITY TEST CONDITIONS NO. TEST CONDITION DURATION REFERNCE DOCUMENT 1 SOLDERABILITY 230 ± 5 DC 5 SEC MIL-STD-202 METHOD 208 2 LEAD PULL 2KG IN AXIAL LEAD DIRECTION 10 SEC MIL-STD-750 METHOD 2036.3 3 LEAD FATIGUE 90-DEGREE BEND WITH 0.5KG WEIGHT

Contextual Info: MODULE GROUP C TESTING For Module H3 TEST CONDITION MIL-STD-750 TEST METHOD SUBGROUP 1 Physical Dimensions Terminal Strength tension Test Condition A, W = 10lbs., t = 15 seconds 2036 Moisture Resistance Omit initial conditioning 1021 Electrical Reverse Current (IR) @ rated VWM

Contextual Info: INCH–POUND MIL–PRF–19500/624E 31 December 2012 SUPERSEDING MIL–PRF–19500/624D 18 June 2009 See 6.4 The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 March 2013. PERFORMANCE SPECIFICATION SHEET

2N3442 LEAD FREE

Contextual Info: INCH–POUND MIL–PRF–19500/370H 19 February 2013 SUPERSEDING MIL–PRF–19500/370G 14 August 2008 The documentation and process conversion measures necessary to comply with this document shall be completed by 19 August 2012. PERFORMANCE SPECIFICATION SHEET

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/661D 17 April 2013 SUPERSEDING MIL-PRF-19500/661C 7 August 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

2N498

Abstract: 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S
Contextual Info: MIL SPECS I C | Q0D01ES 0000537 S "T~ 35 MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION S E M I C O N D U C T O R DE VICE, T R A N S I S T O R , N P N , SI LICON, M E D I U M - P O W E R T Y P E S 2 N 4 9 7 , 2N498, 2N656, 2N657 ,

MOCZ500

Abstract: ssr schematic circuit interface high voltage ac with microcontroller 730K-01 motorola triac driver radiall 617 610 connector TRIAC 8315 triac drive circuit IEC1000 MOCZ
Contextual Info: MOTOROLA Order this document by MOCZ500/D SEMICONDUCTOR TECHNICAL DATA MOCZ500 GlobalOptoisolator Motorola Preferred Device Mini Zero-Crossing AC SSR This device consists of a gallium arsenide infrared emitting diode optically coupled to a zero–cross triac circuit and a power triac. It is capable of driving

Y9 smd

Abstract: C1417 diode smd y9 marking code a18 SMD ic
Contextual Info: INTEGRATED CIRCUITS PDI1284P11 3.3V Parallel interface transceiver/buffer Product specification Supersedes data of 1997 Sep 15 Philips Semiconductors 1999 Sep 17 Philips Semiconductors Product specification 3.3V Parallel interface transceiver/buffer FEATURES

MQCZ500

Abstract: triac TY 500 T
Contextual Info: MOTOROLA O rder this docum ent by M OCZ500/D SEMICONDUCTOR TECHNICAL DATA & TO VDE UL <H> < D CSA SETI SEMKO ® DEM KO NEMKO BABT GlobalO p toisola to rT MOCZ500 Motorola Preferred Device Mini Zero-Crossing AC SSR This device consists of a gallium arsenide infrared emitting diode optically

2N2553

Abstract: 2N1041 2N2555 2N1039 2N2557 2N2559 2N2559 JAN Germanium power
Contextual Info: M IL -S -19500'89D SU PER SED IN G M I L - S -19500 89C 20 M a rc h 1964 niTTTt*tiAr%\r oriT?ntt? rr*a rp x o j t xr i rAKT ivixijJl SE M IC O N D U C TO R D E V IC E , TRA N SISTOR. P N P , GERM ANIUM , PO W ER T Y P E S 2N 1039. 2N 1041, 2N 2553, 2N2555. 2N2557 AND 2N2559

"Z9m"

Abstract: 1N4627US-1 Z9M y 1N4614US-1 1N4099CUR Zener Diode 13B3 "Z9m 1N4135CUR-1 DIODE D7M zener 13B3
Contextual Info: MIL SPECS 44 E D m 0000125 0034352 Ö7T • MILS INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 July 1994 MIL-S-19500/435C 20 January 1994 SUPERSEDING MIL-S-19500/435B 3 May 1993

transistor tt 2206 substitute

Abstract: t 3866 power transistor equivalent transistor TT 3034 ix 2933 HP 3120 TT 2206 HP 2630 sc 2262 HP 2602 HP 2231
Contextual Info: Index The Capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-9 Dielectrics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10-13 Radial Leads SKYCAPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14-19 CERALAM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-23

transistor tt 2206

Abstract: MX 0541 tt 2246 104k 630 capacitor TT 2206 y5v 104z sec capacitor Transistor TT 2246 a5e 104 transistor tt 2206 substitute diode cc 3053
Contextual Info: A KYOCERA GROUP COMPANY AVX Multilayer Ceramic Leaded Capacitors NOTICE: Specifications are subject to change without notice. Contact your nearest AVX Sales Office for the latest specifications. All statements, information and data given herein are believed to be accurate and reliable, but are presented without guarantee,

TT 2206

Abstract: transistor tt 2206 substitute MIL-C-11015 transistor tt 2206 capacitor type 104z 50v TT 2206 datasheet 103k 0291 skycap Transistor TT 2246 equivalent transistor TT 3034
Contextual Info: Index The Capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-9 Dielectrics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10-13 Radial Leads SKYCAPS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14-19 CERALAM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20-23

Helipot

Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Contextual Info: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used

mwab

Abstract: 2N706 transistor 2n706 2n706 transistor mwab 3.3
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.

ILS 404 CB

Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706
Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.

MIL-S-19500/578

Abstract: JANS1N4148US-1 1N6642 JANTX 1N4148-1 JANS 1N6642 JANTXV 1N4148-1 JANTX 1N6642 1n4148 die DIODE LN4148 IC 4011
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 Sep 94. INCH-POUND MIL-S-19500/578B 8 June 1994 SUPERSEDING MIL-S-19500/578A 19 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIOOE, SILICON, SUITCHING

2az marking transistor sot-23

Abstract: transistor 431 N 2N2481 foto transistor TX markings on transistor
Contextual Info: M IL-S-19500/268G 25^June 1971. . SliPEHSEDItfG i i» rr tt rr . * / / tr v \ IVllU-O-XOilt m iu *l oo -io u u v /6uoD\i,<AV X/ 1 July 1965 j a ac a q a o a xt a MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON SWITCHING t Y f e S 2 nz 46I An d TX2Nii48i

TT 2206

Abstract: tt 3043 capacitor type 104z 50v transistor tt 2206 capacitor cross reference 104z 50v a5e 104 Y5V 104Z MC 3843 skycap sr40 ultrasonic
Contextual Info: www.avx.com AVX Multilayer Ceramic Leaded Capacitors Version 8.1 Contents The Capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-9 Dielectrics C0G NP0 Dielectric “A”. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

a5e 104z

Abstract: TT 2206 MIL-PRF-39014 a5e 104 sr40 ultrasonic skycap MX 0541 104K X7R 63 capacitor 1005 0402 ,metric SLA681
Contextual Info: www.avx.com AVX Multilayer Ceramic Leaded Capacitors Version 10.10 Contents The Capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-9 Dielectrics C0G NP0 Dielectric “A”. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

A5C 104K

Abstract: ESA/SCC 3901 MIL-PRF-28861 hr 821K 3kv ceramic capacitor ckr06 ceramic capacitor marx generator BT 2258 diode cc 3053 SM 686 16V cc 3053
Contextual Info: A KYOCERA GROUP COMPANY AVX Military Products Military Products AVX Military Qualified Products Listing Table of Contents Multilayer Ceramic Leaded Capacitors – Military Cross Reference. . . . . . . . . . . . . . . . . 3-31 MIL-PRF-39014 M, P, R and S Failure Rate Level

MX 0541

Abstract: TB 2929 Ho BT 3758 equivalent MIL-PRF-28861 k 3638 Alternatives klystron weapon STC 07256 Klystron tube Bt 2313 K 4005
Contextual Info: AVX Military Products Military Products AVX Military Qualified Products Listing Table of Contents Multilayer Ceramic Leaded Capacitors – Military Cross Reference . . . . . . . . . . . . . . . . 3-31 MIL-PRF-39014 M, P, R and S Failure Rate Level /01, /02, /05, /20, /21, /23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

K 4005

Abstract: MX 0541 3652 substitution klystron weapon TB 2929 H alternative 8526 1348 TB 2929 Ho Bt 2313 military capacitor codes MIL-PRF-123/01
Contextual Info: AVX Military Products Military Products AVX Military Qualified Products Listing Table of Contents Multilayer Ceramic Leaded Capacitors – Military Cross Reference . . . . . . . . . . . . . . . . 3-31 MIL-PRF-39014 M, P, R and S Failure Rate Level /01, /02, /05, /20, /21, /23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4