GG3M Search Results

TDA7236

Abstract: W574 gg3m w 574 TDA7236D LS5120 DA723 DA723S kss 8j D42E
Contextual Info: 42E D • 7=^537 S 7 SGS-THOMSON 7 Æ U M gG3m i r a * S 003b31ö T ■ SGTH _ T-nt-oà-u T D A 7 2 3 6 /D VERY LOW VOLTAGE AUDIO BRIDGE ADVANCE DATA S G S-TH0MS0N T h e T D A 7 2 3 6 is a m o n o lith ic bridge audio am p lifier in tninidip and S O -8J package intended

gg3m

Abstract: UA733
Contextual Info: TEXAS I NSTR -CLIN/INTFO SS dË J f l T b l 7 2 4 GG3M454 8961724 TEXAS INSTR LIN/INTF c T 55C 2 3<t45<t T -74-07-01 T Y P E TL026 AGC VIDEO AM PLIFIER LINEAR INTEGRATED CIRCUITS D 2 7 9 0 , OCTOBER 1 9 8 3 Low Output Common-Mode Sensitivity to AGC Voltages

1N5415

Abstract: 1N5415US 1N5416US 1N5417US 1N5420 1N5420US
Contextual Info: MME D MIL SPECS MILS □□□□IBS 0Q3MSbS 2TT i- 1 I INCH-POUND | I_ l | The documentation and process conversion | j measures necessary to comply with this | | revision shall be completed by 1 August 19941

79c965

Abstract: AMD 79c97* lance
Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices Am79C965 PCnet -32 Single-Chip 32-Bit Ethernet Controller DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet con tro ller for 486 and V ideo Electronics Standards Association VESA local buses ■ Supports ISO 8802-3 (IEEE/ANSI 802.3) and

GG3H

Contextual Info: PRELIMINARY a A m 7 9 C Advanced Micro Devices 9 6 1 A PCnet -ISA II Jumperless, Full Duplex Single-Chip Ethernet Controller for ISA DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Industry Standard Architecture ISA and Extended

u2610

Contextual Info: 47E D • SIEM EN S A23Sb05 003M373 3 M Z I Z G SIEMENS AKTIENGESELLSCHAF T - T K T l- C n TV Stereo Processor TDA 6611 Preliminary Data Bipolar IC Features The TDA 6611 represents a complete TV stereo system controlled by the I2C bus. • • • • •

Contextual Info: P D - 917 0 5 International l R Rectifier IRF7322D1 PRELIMINARY FETKY MOSFET/ Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low V F Schottky Rectifier Generation 5 Technology

gg3m

Abstract: 12DU8
Contextual Info: NEC X NEC Electronics Inc. f#PD42116x = 420, 820, 920, 162, 182 16-Megabit Synchronous Dynamic CMOS RAM Advance Information N E C ELECTRONICS T '- y ó INC blE Description ThepPD42116x is a synchronous DRAM (SDRAM) using a single 3.3-volt power supply and with all input signals

Contextual Info: 47E D • 023SbOS □G3425&#39;ì 7 ■ S I E G SIEM ENS SIEMENS AKTIENGESELLSCHAF 'T - '- n - t n - c n 5 V-Modulator TDA 5664 Preliminary Data Bipolar 1C Function Monolitic integrated circuit for use as a modulator in the 30 to 860 MHz range. Application Video recorders, cable converters, cable TV head stations,

jUPD482234

Abstract: ICC19
Contextual Info: NEC ELECTRONICS INC blE D NEC NEC Electronics Inc. Description Each of the /JPD482234 fast-page and ¿/PD482235 (hyper-page) video RAMs has a random access port and a serial read/write port. The serial read/write port is connected to an internal 4096-bit data register through

Contextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE150F Power Module: dc-dc Converter; 38 Vdc to 60 Vdc Input, 3.3 Vdc Output; 99 W Features • High efficiency: 75% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.

ds1666-010

Abstract: 100-16L potentiometer vr DS1666 DS1666-10 DS1666-50 1519Q
Contextual Info: DALLAS I fc — SEMICONDUCTOR DS1666 Audio Digital Resistor w w w .d a lsem i.co m FEATURES • ■ ■ ■ ■ ■ ■ PIN ASSIGNMENT 128 position, digitally controlled poten­ tiometer Operates from a +5 volts power supply with TTL signal inputs Wide analog voltage range o f ±5 volts

Contextual Info: KM23V8100C G/T ELECTRONICS CMOS Mask ROM 8M-Bit (1M X 8/512 K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 150ns(max.) ■Supply voltage : single +3.3V

DC48V

Abstract: FE200A9 FE200A98 B1304
Contextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE200A9 Power Module: dc-dc Converter; 38 Vdc to 60 Vdc Input, 5 Vdc Output; 200 W Features • Size: 121.9 mm x 63.5 mm x 12.7 mm 4.80 in. x 2.50 in. x 0.50 in. ■ High efficiency: 82.5% typical

IS0100AP

Abstract: ZZ220 G034
Contextual Info: n=n=n IS0100 B U R R -BRO W N « Optically-Coupled Linear ISOLATION AMPLIFIER FEATURES APPLICATIONS • EASY TO USE, SIM ILA R TO AN OP AMP V out^ in = R f> Current Input VouV^w = R f^ in» Voltage Input • 100% TESTED FOR BREAKDOW N: 750V Continuous Isolation Voltage

n38 transistor

Abstract: gg3m BFG590 philips MATV amplifiers
Contextual Info: PhjjjP^ jJjjÇonductors _ bfc.53^31 OÜ314b4 45D HIAPX NPN 8 GHz wideband transistor ^ BFG590; BFG590/X; BFG590/XR N APIER PHILIPS/DISCRETE blE »• PINNING FEATURES DESCRIPTION PIN • High power gain BFG590 Fig.1 Code: N38 • Low noise figure • High transition frequency