MIL-STD-750 METHOD 1037 Search Results

Contextual Info: INCH–POUND MIL–PRF–19500/624E 31 December 2012 SUPERSEDING MIL–PRF–19500/624D 18 June 2009 See 6.4 The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 March 2013. PERFORMANCE SPECIFICATION SHEET

2N3442 LEAD FREE

Contextual Info: INCH–POUND MIL–PRF–19500/370H 19 February 2013 SUPERSEDING MIL–PRF–19500/370G 14 August 2008 The documentation and process conversion measures necessary to comply with this document shall be completed by 19 August 2012. PERFORMANCE SPECIFICATION SHEET

431 regulator

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 April 2012. INCH–POUND MIL–PRF–19500/114H w/AMENDMENT 1 24 January 2012 SUPERSEDING MIL–PRF–19500/114H 09 September 2011 PERFORMANCE SPECIFICATION SHEET

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r

2n2222 h 331 transistors

Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE

BC237

Abstract: marking CODE N3 SOT223 marking N3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor PNP Silicon 14 13 12 11 10 9 8 5 6 7 MPQ3762 PNP 1 2 3 4 14 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –40 Vdc

BC237

Abstract: 31 MOSFET sot-323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits.  These miniature surface mount MOSFETs utilize Motorola’s

BC237

Abstract: MAD1103P msc2295 MPS41 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS70LT1 Preliminary Information Schottky Barrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBF2202PT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s

BC237

Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device  2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1N02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE

BC237

Abstract: transistor TO-92 bc108 VN10lM equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN10LM N–Channel — Enhancement 3 DRAIN 2 GATE  1 SOURCE 1 2 3 CASE 29–05, STYLE 22 TO–92 TO–226AE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. P–CHANNEL ENHANCEMENT–MODE

BC237

Abstract: S 178 A INTEGRATED CIRCUIT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPQ7041 MPQ7042 MPQ7043* Quad Amplifier Transistors NPN Silicon 14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 5 *Motorola Preferred Device 6 7 TYPE B MAXIMUM RATINGS Rating Symbol MPQ7041 MPQ7042 MPQ7043 Unit Collector – Emitter Voltage

BC237

Abstract: MARKING CODE diode sod123 W1 rlra
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59