MICRON SIMM Search Results

2mb 72-pin simm

Contextual Info: 4,8 MEG X 36 ECC-OPTIMIZED DRAM SIMMs MICRON I TECHNOLOGY, INC- MT9D436 MT18D836 DRAM MODULE For the latest data sheet revisions, piease referto the Micron Web site: www.micron.com/nii/nisp/html/ciatasheet.htmi FEATURES • Four-CAS#, ECC-optimized configuration in a 72-pin,

Contextual Info: 4’8 M E Gx36 MICRON* I ECC-OPTIMIZED DRAM SIMMs TECHNOLOGY, INC- l" R A M U MT9D436 X r tM IV I M T18D836 x MODULE For the latest data sheet revisions, please referto the Micron Web site: www.micron.com/mi/msp/htnl/datosheet.htnl FEATURES PIN ASSIGNMENT Front View)

8 MEG X32 EDO

Contextual Info: 4,8 MEG X 32 DRAM SIMMs MICRON I TECHNOLOGY, INC- HR AM U lln m MT8D432 X MT16D832(X) IV I For the ia test data sheet revisions, piease refer to the Micron Web site: www.micron.com/mti/msp/htmi/ctatasheet.html IlJ| III FEATURES • JEDEC- and industry-standard pinout in a 72-pin,

Contextual Info: 1,2 MEG X 32 DRAM SIMMs MICRON I TECHNOLOGY, INC- MT2D T 132(X) MT4D(T)232D(X) DRAM MODULE For the latest data sheet revisions, please referto the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,

marking b7t

Contextual Info: MICRON SEMICONDUCTOR INC b7E T> • b lllS M R OOOIbSO ÔT7 ■ MRN MICRON 64K SRAM MODULE X MT8S6432 32 SRAM MODULE 64K X 32 SRAM FEATURES High speed: 15*, 20,25,30 and 35ns High-performance, low-power CMOS process _ Single +5V +10% power supply Easy memory expansion with CE and OE functions

Contextual Info: MICRON TECHNOLOGY INC SSE ]> b i l l i g 0004GGS ¿OI MICRON 256K X IPIRN MT8S25632 32 SRAM MODULE - ' " P J t - i ' 5 - 1 4 SRAM MODULE 256K X 32 SRAM FEATURES • High speed: 15*, 20,25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal

Contextual Info: MICRON SEMICONDUCTOR INC b?E T> m b l l l S ^ DOO'ìb'ìD 4fl3 B U R N PRELIMINARY MICRON SF.ì.liCONDllCTORINC B 256K SRAM MODULE X MT8LS25632 32 SRAM MODULE 256K X 32 SRAM LOW VOLTAGE • High speed: 20*, 25 and 35ns • High-density 1MB design • High-performance, low-power, CMOS double-metal

LS132M

Contextual Info: MICRON SEMICONDUCTOR IN fc.4E D • b l l l S M I CmGfl74n TMl ■ URN PRELIMINARY MICRON j _« M .C O W U C T O M M M T8LS132 | M EGX 32 SRAMM O D U LE [ SRAM MODULE 1 MEG X 32 SRAM 3.3V WITH OUTPUT ENABLE FEATURES • • • • • • • • •

Contextual Info: MICRON • 256K technCLOGV. inc. MICRON T E C H N O L O G Y INC SSE T> DRAM MODULE MT8D25632 32, 512K X 16 DRAM MODULE iu r n ■ blllSMT D Q D 4 7 b 7 4 E5 X 256K X 32, 512K x 16 FAST PAGE MODE MT8D25632 LOW POWER, EXTENDED REFRESH (MT8D25632 L) FEATURES

Contextual Info: MICRON • 4 MEG TECHNOLOur. inc . MICRON T E C H N O L O G Y INC S5E ]> ■ X bill5 ^ MT9D49 9 DRAM MODULE D D 0 4 7 4 7 b37 IMRN 4 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT9D49 LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES • Industry standard pinout in a 30-pin. single-in-line

Contextual Info: ADVANCE MICRON MT24D836 8 MEG X 36, 16 MEG X 18 DRAM MODULE 1 MICRON T E C H N O L O G Y INC 55E D • 8 MEG X 36,16 FAST PAGE MODE MEG x18 FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-perform ance, CM OS silicon-gate process

Contextual Info: MICRON SEMICONDUCTOR IN C MICRON I b3 E D 1 M EG DRAM MODULE • X blllSMT 32, 2 M E G X 0000032 HT T ■ URN MT8D132 16 D R A M M O D U L E 1 MEGx 32’ 2 MEGx 16 FAST-PAGE-MODE MT8D132 LOW POWER, POWER, LOW EXTENDED REFRESH (MT8D132 L) FEATURES PIN ASSIGNMENT (Top View)

Contextual Info: OBSOLETE 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs MT9D436 MT18D836 DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Four-CAS#, ECC-optimized configuration in a 72-pin,

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

Contextual Info: OBSOLETE 4, 8 MEG x 32 DRAM SIMMs MT8D432 X MT16D832(X) DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • JEDEC- and industry-standard pinout in a 72-pin, single in-line memory module (SIMM)

Contextual Info: MICRON I 1 SEMICONDUCTOR INC. MT10D140 MEG X 40 DRAM MODULE 1 MEG x 40 DRAM DRAM MODULE FAST PAGE MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES MARKING OPTIONS • Tim ing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 72-pin SIMM (gold)

edo dram 50ns 72-pin simm

Abstract: edo dram 60ns 72-pin simm dm65 edo dram 60ns 72-pin simm 32mb
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs DRAM MODULE MT9D436 X MT18D836 X For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT Front View 72-Pin SIMM 4 Meg x 36 (shown)

Contextual Info: 256K, 512K x 32 DRAM SIMMs MICRON • IbCHNULUÜY. INC MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32)

DM44

Abstract: 25AP-P edo dram 72-pin simm 4 m
Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 4, 8 MEG x 32 DRAM SIMMs DRAM MODULE MT8D432 X MT16D832(X) For the latest data sheet revisions, please refer to the Micron Web site: www.micronsemi.com/datasheets/ datasheet.html FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs DRAM MODULE MT9D436 MT18D836 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • Four-CAS#, ECC-optimized configuration in a 72pin, single in-line memory module SIMM

PC133 registered reference design

Abstract: 16 MB Micron EDO SIMM Module mt1l DS1849 10EF1 10EB2
Contextual Info: PRELIMINARY 512MB / 1GB x72, ECC 168-PIN REGISTERED FBGA SDRAM DIMM SYNCHRONOUS DRAM MODULE MT36LSDF6472G - 512MB MT36LSDF12872G - 1GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT (Front View)

PC133 registered reference design

Abstract: MT9V
Contextual Info: ADVANCE 32, 64 MEG x 72 REGISTERED SDRAM DIMM SYNCHRONOUS DRAM MODULE MT18LSDT3272DG, MT18LSDT6472DG For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT FRONT VIEW 168-PIN DIMM

Contextual Info: MICRON I 4’ 8M E Gx36 ECC-OPTIMIZED DRAM SIMMs TECHNOLOGY, INC. MT9D436X MT18D836 X DRAM MODULE FEATURES PIN ASSIGNMENT Front View • Four-CAS#, ECC-optimized configuration in a 72-pin, single in-line memory module (SIMM) • 16MB (4 Meg x 36) and 32MB (8 Meg x 36)