MICRON 40H RESISTOR Search Results

9C0000

Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code

9C0000

Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code

Contextual Info: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code

Contextual Info: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa

FY536

Abstract: FW537
Contextual Info: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa

Contextual Info: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa

FY550

Abstract: 44A4h
Contextual Info: 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.22µm Process Technology FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero

FY541

Abstract: micron flash controller MT28F322D15FH-104BET
Contextual Info: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D15FH Super Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice

Contextual Info: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa

FY520

Abstract: FW533 MT28F322D18
Contextual Info: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa

pic 8259

Abstract: sus_stat_n rtc backup battery circuit 2h48
Contextual Info: PRELIMINARY‡ MT8LLN22NCNE COPPERTAIL 21PAD/22NCN Chipset Overview MT8LLN22NCNE Peripheral Bus Controller For the latest data sheet please refer to the Micron Web site: www.micron.com/chipset. GENERAL DESCRIPTION The Micron 21PAD/22NCN chipset consists of two

48-pin TSOP package tray micron

Contextual Info: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3

Contextual Info: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa

M58BW16FB

Abstract: M58BW32FT M58BW32FB V/B/512
Contextual Info: M58BW16F, M58BW32F Features M58BW16F, M58BW32F 16Mb or 32Mb x32, Boot Block, Burst 3.3V Supply Flash Memory Features • Security – 64-bit unique device identifier (UID) • Fast programming – Write to buffer and program capability (8 double words) • Optimized for FDI drivers

MT28F128J3

Abstract: MT28F320J3 MT28F640J3 64-BALL
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I Memory Organization • x8/x16 • One hundred twenty-eight 128KB erase blocks 128Mb • Sixty-four 128KB erase blocks (64Mb) • Thirty-two 128KB erase blocks (32Mb)

MT28F322D18

Abstract: MT28F322D20 FX546
Contextual Info: 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero

fw209

Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

Micron Q-Flash memory

Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

Contextual Info: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)

M29F800FT

Abstract: m29f800f M29F400FT M29F160F M29F200FT M29F160FT M29F800 M29F400F M29F200F M29F400FB
Contextual Info: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3

Contextual Info: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)

Contextual Info: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)

Contextual Info: PRELIMINARY‡ 64Mb, 32Mb SIRUSFLASH MEMORY SIRUSFLASHTM MEMORY MT28F640J3, MT28F320J3 FEATURES PIN ASSIGNMENT Top View • x8/x16 organization • Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb) • VCC, VCCQ, and VPEN voltages:

micron flash controller

Abstract: 03BCD Micron Q-Flash memory
Contextual Info: PRELIMINARY‡ 128Mb, 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY MT28F128J3, MT28F640J3, MT28F320J3 FEATURES PIN /BALL ASSIGNMENT Top View • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb)