MICONDUCTOR Search Results

Contextual Info: 3.0 Am p MINIATURE PLASTIC SILICON RECTIFIERS D ata Sheet BY251 miconductor Features • LOW COST ■ DIFFUSED JUNCTION ■ HIGH CURRENT CAPABILITY E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 *C . ■ M EETS UL SPECIFICATION 94V-0 Units B Y 2 5 1 . . . 2 5 5 S e r ie s

Contextual Info: 8.0 Amp SINGLE PHASE SILICON BRIDGE D a ta Sheet miconductor Mechanical Dimensions Description Hole-.1450 o s Mechanical Data: Mounting Position - Any. _ Weight- 2 0 Grams. Features • COMPACT SIZE ■ 12S AMP SURGE OVERLOAD RATING ■ LOW LEAKAGE CURRENT

Contextual Info: 2.0 A n * SMD SUPER FAST RECTIFIERS D a ta Sheet miconductor Mechanical Dimensions Description ^>_4.06/4.60U| Cathode Package “SMB” I3.30/3.90 M .L _ .11/.30 UFS21 1 .6 5 /2 .1 ^ -*1 1 .9 1/2 .4 l = r =^ p . 0 l / . 20 1.90/2.15 Features • HIGH SURGE C A M B IU T Y

Contextual Info: 1.0 Amp FAST SWITCHING MEGARECTIFIERS D a ta Sheet miconductor Mechanical Dimensions r n _ L r .205 iso JEDEC DO-41 t •080 i . 1.00 M in.„ i Features • HIGH TEM PERATURE METALLURGI­ C A L!^ BONDED CONSTRUCTION ■ 1A AMP OPERATION T . = 75°C, WITH

2N6076

Contextual Info: FAIRCHILD D ISC R E TE POW ER & SIGNAL TECH N O LO G IES MICONDUCTOR i 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BV c e o hFE 25 V Min 100 (Min) @ V c e = 10 V, Ic = 10 mA 1 2 3 1 B C E 1 ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature

E1115

Contextual Info: MICRON SE MICONDUCTOR INC b?E D BB fe1115 4'ì OOOTHSfl STT tB MRN ADVANCE MT5LC1001 1 MEG X 1 SRAM M IC R O N SRAM 1 MEG X 1 SRAM LOW VOLTAGE • All I /O pins are 5V tolerant • High speed: 15,17,20,25, 35 and 45ns • High-performance, low-power, CMOS double-metal

74AS1004A

Abstract: as1004a
Contextual Info: NATIONAL SENICOND -CLOGIO fc.1 SE MICONDUCTOR 6 1C 51864 D T - V 3 - /5 ' National miconductor DM54AS1004A/DM74AS1004A Hex Inverting Drivers General Description Absolute Maximum Ratings Note d These devices co n ta in six independent 2-Input drivers, each o f w hich pe rform s the lo gic invert/com plem e nt

Contextual Info: XHHHHtW' M W »m m m W \\\\\\\\\W î SNNNN« «K m w w W NtiW N« / » 6 A \\\\\\\\\\W / v A §§§ §§ i ^ ^ ^ / , i» ® \\\\\\\\\\\\\\\> - M MICONDUCTOR A \\\\\\\\\\\\\ w ,A \\\ gw m w AS3940/41/42 ^ ^ ^ ^ ^ ^ ^ ^ = È Xcellence in Analog Power Products

p705

Abstract: C5057
Contextual Info: FAIRCHILD J u n e1997 MICONDUCTOR -m NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel e n hance m en t m o de pow er field effect tra nsistors are produced using Fairchild's proprietary, high cell

transistor tl 4311

Abstract: transistor 2sc1570 TRANSISTOR BC 157 TRANSISTOR BC 158 PA 2027A 2SC1570 TRANSISTOR IFW S2003A opa 2064 TRANSISTOR "BC 157"
Contextual Info: 3EE D SANYO SE MICONDUCTOR CORP 7Ti707b OGDÖÖ3Ö 1 | r - 2003A ' 2 f - / s N P N Epitaxial P la n a r S ilic o n T ra n s is to r Low-Noise Amp Applications 43 IE The 2SC1570 is developed as very low-noise tra n s isto r and is especially suited for use in equ alizer first

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UU6043B Preliminary LINEAR INTEGRATED CIRCUIT FLASHER IC WITH 18mΩ SHUNT  DESCRIPTION The UTC UU6043B is a miconductor integrated circuit designed for relay-controlled automotive flashers where a high level EMC is required.

D1113

Abstract: 1-113HD saat SD1102CHP SD1102DD SD1102HD SD1112CHP SD1112DD SD1113CHP SD1113DD
Contextual Info: TOPAZ SE MICONDUCTOR DSE D g TDÔSaSb QüGlGST 2 | — - - - - — — = , T-29-25 sduos, s o m a , S D 1113 T F r S ir ^ i^ iZ ; MICONDUCTOR N-CHÂNNEL EMHANCIEVIENT-IViODi HIGH-VOLTAGE D-MOS POWER FETs ORDERING INFORMATION Sorted Chips in Carriers

Contextual Info: 6.0 Am p MINIATURE PLASTIC SILICON RECTIFIERS D ata Sheet miconductor M echanical Dimensions JEDEC R6 t . 1.00 Min. . -340 .360 I FR6A01 T •" n " .340 i .360 1 T .050 typ. Features ■ DIFFUSED JUNCTION ■ LOW COST MEETS UL SPECIFICATION 94V-0 ■ LOW LEAKAGE

2N6076

Contextual Info: FAIRCHILD D IS C R E T E PO W ER & SIGNAL TEC H N O L O G IES MICONDUCTOR i 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BV ceo hFE . . . . 25 V Min . . . . 100 (Min) @ V c e = 10 V, Ic = 10 mA 1 2 B C 31 E 1 ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEM PERATURES

Contextual Info: Data Sheet 1.5 Amp SIN G LE PHASE SILICO N BRIDGE miconductor Mechanical Dimensions Features • COMPACT SIZE ■ 200 AMP SURGE OVERLOAD RATING ■ LOW LEAKAGE CURRENT ■ MEETS UL SPECIFICATION 94V-0 Units E le c tric a l C h a ra c te ris tic s @ 25*C .

Contextual Info: 50 Amp SCHOTTKY BARRIER RECTIFIERS D a ta Sheet miconductor Description Mechanical Dimensions ♦- .900 - * \ ¥ .050 Typ Features • HIGH CURREHT CAPABILITY WITH LOW V r ■ HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION ■ HIGH EFFICIENCY w/LOW POWER LOSS

FRS-10

Contextual Info: Data Sheet 1.0 A m FAST RECOVERY RECTIFIERS miconductor Mechanical Dimensions Description P ackage |«- 4.3/47 m m o Features • FAST SWITCHING FOR HIGH EFFICIENCY ■ 1j0 AMP OPERATION T = 55°C , WITH NO THERMAL RUNAWAY ■ HIGH SURGE CAPABILITY ■ MEETS UL SPECIFICATION 94V-0

Contextual Info: 1.0 Amp MINIATURE PLASTIC SILICON RECTIFIERS D a ta Sheet 1N4001. . . 4007Series miconductor Description M echanical Dimensions Features • LOW COST ■ DIFFUSED JUNCTION ■ LOW LEAKAGE E le c tric a l C h a ra c te ris tic s ■ MEETS UL SPECIFICATION 94V-0

Contextual Info: Data Sheet HIGH VOLTAGE MINIATURE PLASTIC RECTIFIERS miconductor Mechanical Dimensions Description r .1041 !l40 JEDEC 00-41 -nr _1 I . JEDEC 00-15 .230 .300 .205 .160 ZT D80 X .107 , .1.00 Min. . * 1 t 031 typ. 1.00 Min. + 1 T~ .031 typ. Features • DESIGNED FOR PHOTO FLASH

HV05-12

Contextual Info: Data Sheet 550 m A HIGH VOLTAGE MICROWAVE OVEN RECTIFIERS Mechanical Dimensions miconductor - . 8 ? 6 - L_L -2 8 5 T _ 25 6,4 i.u u m nj j^.050 | T .172 DIA. Faston Terminal E— 3.51 Features • HIGH OVERLOAD SURGE CAPABILITY ■ TYPICAL I, < I hA

Contextual Info: Data Sheet 1.0 Amp FAST RECOVERY PLASTIC RECTIFIERS miconductor M echanical Dimensions JED EC DO-41 , r T .0 8 0 1 .107 -205 loo . 1.00 Min. . 1 _L i t Features • FAST SWITCHING FOR HIGH EFFICIENCY ■ 1JO AMP OPERATION @ T = 55°C , WITH NO THERMAL RUNAWAY

Contextual Info: 8.0 Amp ULTRAFAST PLASTIC RECTIFIERS D a ta Sheet miconductor M echanical Dimensions JEDEC TO 2 2 0 .10 . l*jO \ T .4 2 Tzoo _L «- .2 2 5 M in . L _ .5 0 [ - * — • ULTRAFAST RECOVERY TIME ■ HIGH SURGE CAPABILITY ■ MEETS UL SPECIFICATION 94V-0 Electrical C haracteristics @ 25*C.

Contextual Info: Data Sheet 1.0 Amp Surface Mount SINGLE PHASE SILICON BRIDGE miconductor M echanical Dimensions Description •n _ IL + .3BS .405 ^ 245 AC I 2” .285 .315 L .130 Example: R D F -0 4 M “S ” = 400V/1 A m p S M D part '.245 .255 u “ - I .330 .340 '

AK4189

Contextual Info: AKM Semiconduct S tor 888 256-7364 e-mail: icinfo@ @akm.com AK418 89 Press Rellease New ch hip-scale package resisttive touchsccreen controoller supporrts dual toucch gestures San Josse, CA, Marrch 15, 2012 2 - AKM Sem miconductorr today introoduced the A