NDB7052 Search Results

NDB7052L

Abstract: NDP7052L
Contextual Info: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using

p705

Abstract: C5057
Contextual Info: FAIRCHILD J u n e1997 MICONDUCTOR -m NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel e n hance m en t m o de pow er field effect tra nsistors are produced using Fairchild's proprietary, high cell

A6069

Abstract: NDP7052L NDB7052L
Contextual Info: May 1997 NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDB7052

Abstract: NDP7052
Contextual Info: National April 1 9 9 6 ADVANCE INFORMATION Semiconductor” NDP7052/ NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDB7052

Abstract: NDP7052
Contextual Info: June 1997 NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features 75 A, 50 V. RDS ON = 0.01 Ω @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

Contextual Info: June 1997 RAIRCHII-D M ICDNDUCTO R ^ NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has

NDB7052L

Abstract: NDP7052L
Contextual Info: FAIRCHILD iM IC O N D U C T D R M a V 1997 tm NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

NDB7052

Abstract: NDP7052
Contextual Info: FAIRCHILD MICQNDUCTDR June 1997 tm NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has

Contextual Info: R A I R C H May 1997 I I- D M ICDNDUCTO R tm NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

Contextual Info: FA IR C H ILD •MICONDUCTOR M ay1997 tm NDP7052L/ NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

12SnOFC

Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
Contextual Info: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will