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    Vishay Semiconductors S07M-GS08

    DIODE GEN PURP 1KV 1.5A DO219AB
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    DigiKey S07M-GS08 Reel 159,000 3,000
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    New Advantage Corporation S07M-GS08 1,431,000 1
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    Vishay Semiconductors S1FLM-GS08

    DIODE GEN PURP 1KV 700MA DO219AB
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    DigiKey S1FLM-GS08 Cut Tape 21,447 1
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    S1FLM-GS08 Digi-Reel 21,447 1
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    S1FLM-GS08 Reel 20,347 3,000
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    Taoglas Antenna Solutions MGS.01

    MOUNTING GASKET FOR SYNERGY / SY
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    DigiKey MGS.01 Bulk 20 1
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    Newark MGS.01 Bulk 15 1
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    Onlinecomponents.com MGS.01
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    Sager MGS.01 1
    • 1 $4.75
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    Symmetry Electronics MGS.01 1
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    Dremel MGS0450

    4-1/2" BACKING PAD W/ LOCK NUT
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    DigiKey MGS0450 Bulk 1
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    MOSLEADER RS07M-GS08-ML

    SMF (DO-219AB) Commercial Grade
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    DigiKey RS07M-GS08-ML Reel 200
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    MGS0 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG-S01SP Modulestek SiRF Star III LowPower GPS Module Original PDF
    MGS05N60D Motorola Insulated Gate Bipolar Transistor Original PDF
    MGS05N60D On Semiconductor Insulated Gate Bipolar Transistor N-Channel Original PDF
    MGS05N60D/D Motorola IGBT 0.5 A Original PDF
    MGS05N60D-D On Semiconductor Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate Original PDF
    MGS05N60DG On Semiconductor IGBT Chip: N Channel: 600V: TO-226AE: 3-Pin Original PDF

    MGS0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    To92 transistor datasheet motorola

    Abstract: MGS05N60D zener diode Motorola
    Text: MOTOROLA Order this document by MGS05N60D/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGS05N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient


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    PDF MGS05N60D/D MGS05N60D 226AE To92 transistor datasheet motorola MGS05N60D zener diode Motorola

    MGS05N60D

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGS05N60D/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGS05N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in


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    PDF MGS05N60D/D MGS05N60D IGBTMGS05N60D/D MGS05N60D

    IGBT MOTOROLA

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGS05N60D/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGS05N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in


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    PDF MGS05N60D/D MGS05N60D IGBTMGS05N60D/D IGBT MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: VCA2613 VCA 261 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value


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    PDF VCA2613 SBOS179D 80MHz 40MHz VCA2613

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    Untitled

    Abstract: No abstract text available
    Text: VCA2613 VCA 261 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value


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    PDF VCA2613 SBOS179D 80MHz 40MHz VCA2613

    Untitled

    Abstract: No abstract text available
    Text: VCA 261 VCA2613 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value


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    PDF VCA2613 SBOS179D 80MHz 40MHz VCA2613

    Untitled

    Abstract: No abstract text available
    Text: VCA2613 VCA 261 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value


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    PDF VCA2613 SBOS179D 80MHz 40MHz VCA2613

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


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    PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    TQFP-48

    Abstract: VCA2613 VCA2613Y
    Text: VCA2613 VCA 261 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value


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    PDF VCA2613 SBOS179D 80MHz 40MHz VCA2613 TQFP-48 VCA2613Y

    Untitled

    Abstract: No abstract text available
    Text: VCA2613 VCA 261 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value


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    PDF VCA2613 SBOS179D 80MHz 40MHz VCA2613

    ANA 618

    Abstract: DSP56166 MVP-100
    Text: Freescale Semiconductor, Inc. SECTION 6 Freescale Semiconductor, Inc. DSP56166 ON-CHIP SIGMA/DELTA CODEC MOTOROLA DSP56166 ON-CHIP SIGMA/DELTA CODEC For More Information On This Product, Go to: www.freescale.com 6-1 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc.


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    PDF DSP56166 DSP55 ANA 618 MVP-100

    NA2X

    Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


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    PDF

    TQFP-48

    Abstract: VCA2613 VCA2613Y
    Text: VCA2613 VCA 261 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value


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    PDF VCA2613 SBOS179D 80MHz 40MHz VCA2613 TQFP-48 VCA2613Y

    Untitled

    Abstract: No abstract text available
    Text: VCA2613 VCA 261 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value


    Original
    PDF VCA2613 SBOS179D 80MHz 40MHz VCA2613

    Untitled

    Abstract: No abstract text available
    Text: VCA2613 VCA 261 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value


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    PDF VCA2613 SBOS179D 80MHz 40MHz VCA2613

    DSP56166

    Abstract: E52N temp controller dsp56116 Nippon capacitors XC56166FE
    Text: DSP56166 16-BIT DIGITAL SIGNAL PROCESSOR USER’S MANUAL Motorola, Inc. Semiconductor Products Sector DSP Division 6501 William Cannon Drive, West Austin, Texas 78735-8598 Table of Contents Continued Paragraph Number 1.1 1.2 1.2.1. 1.2.2. 1.2.3. 1.2.4. 1.2.5.


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    PDF DSP56166 16-BIT DSP56166 DSP5616 E52N temp controller dsp56116 Nippon capacitors XC56166FE

    RS -28 001 V9

    Abstract: 0dB-24dB tic 2260 TQFP-48 VCA2613 VCA2613Y
    Text: VCA2613 VCA 261 3 SBOS179B – OCTOBER 2001 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value 80MHz Bandwidth 5dB to 25dB Gain


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    PDF VCA2613 SBOS179B 80MHz 40MHz VCA2613 RS -28 001 V9 0dB-24dB tic 2260 TQFP-48 VCA2613Y

    Untitled

    Abstract: No abstract text available
    Text: VCA2613 VCA 261 3 SBOS179D – DECEMBER 2000 – REVISED OCTOBER 2004 Dual, VARIABLE GAIN AMPLIFIER with Low-Noise Preamp FEATURES DESCRIPTION ● LOW NOISE PREAMP: Low Input Noise: 1.0nV/√Hz Active Termination Noise Reduction Switchable Termination Value


    Original
    PDF VCA2613 SBOS179D 80MHz 40MHz VCA2613

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGS05N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGS05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a b uilt-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in


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    PDF MGS05N60D/D MGS05N60D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G S05N60D /D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGS05N60D Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his IG BT con tain s a b u ilt-in free w h ee lin g diod e and a gate


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    PDF S05N60D

    diode zener c25

    Abstract: c25 zener diode
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGS05N60D Insulated Gate Bipolar transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a built-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in


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    PDF MGS05N60D O-226AE 0E-05 0E-04 0E-03 0E-02 0E-01 diode zener c25 c25 zener diode

    ignition IGBTS

    Abstract: 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E
    Text: Chapter Four Data Sheets Table of Contents Page Page Motor Control IGBTs Power Modules MGP4N60E .4-2 MGP7N60E .4-6


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    PDF MGP4N60E MGP7N60E MGP11N60E MGP14N60E MGP21N60E MGP11N60ED MGP2N60D MGS05N60D MGS13002D. 05N60D. ignition IGBTS 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E

    bb 9790 schematic diagram

    Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
    Text: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one


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    PDF 32-bits. MG65C02, MG29C01, MG29C10, MG80C85, MG82Cxx, MGMC51 Q172SÖ AMI86 DD17SbD bb 9790 schematic diagram DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S