MGFK35V2732 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK35V2732 12.7— 13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The MG FK35V2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The hermetically sealed metal-ceramic

FK35V

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK35V2732 1 2 . 7 - 13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK35V 2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The herm etically sealed metal-ceramic

MGFK30M4045

Abstract: mgfx35v0510 MP6704 MGFX35V0005 MGFK35M4045 M-Typ MGFK33M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045
Contextual Info: - 156 - M € *± € m 1* & a f ï t * 1 1/ h' ü V A * £ (V) 9t * të S P d /P c h (A) * * (W) MGFK30M4045 MW PA GaAs N D -14 GDO -14 0 1. 2 D 7.5 MGFK33M4045 MW PA GaAs N D -14 G DO -14 0 2.4 D 15 MW PA GaAs N D -14 GDO -14 0 4. 5 D 30 MGFK35V2228

3642G

Contextual Info: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m

MGFK35V2732-01

Abstract: MGFK35V2732-51 MGFK35VXXXX FK35V
Contextual Info: ^M ITSUBISHI MGFK35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFK35VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P1dB = 3.5 (TYP)