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    FK35V2732 Search Results

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    FK35V2732 Price and Stock

    Mitsubishi Electric

    Mitsubishi Electric MGFK35V2732

    Electronic Component
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    FK35V2732 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK35V2732 12.7— 13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The MG FK35V2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		MGFK35V2732 FK35V2732 PDF

    ld12a

    Abstract: s parameters MGFK35V2732 p channel j fet s/ksmh12/2.27/30/GA100SIPC12
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 3 5 V 27 32 1 2 . 7 — 1 3 .2 G H z BAND 3 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION The M G FK35V2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		MGFK35V2732 MGFK35V2732 95GHz ld12a s parameters p channel j fet s/ksmh12/2.27/30/GA100SIPC12 PDF

    FK35V

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK35V2732 1 2 . 7 - 13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK35V 2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		MGFK35V2732 FK35V PDF