MGFC38V3642 Search Results

MGFC38V3642

Abstract: MGFC38V
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V3642 PBEUN"nARY 3.6~4.2GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 3 6 4 2 is an internally im pedance-m atched GaAs power FET especially designed fo r use in 3 .6 — 4 .2 GHz band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: b 2 4 clû 2 cî 0 0 1 7 ^ 0 MITSUBISHI SEMICONDUCTOR <GaAs FET> 477 MGFC38V3642 ool 8 • >h,s . . . limi« » 3 .6 ~ 4 .2 G H z BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 3 8 V 3 6 4 2 is an internally im p edance-m atched G aA s power F E T especially designed for use in 3 . 6 —4 .2

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10