MGF4951A
Abstract: MGF4952A
Contextual Info: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band
|
Original
|
june/2004mgf4951a/mgf4952a12ghzmgf4951a+1mgf4952a
|
PDF
|
|
Contextual Info: June/2004 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
|
Original
|
june/2004mgf4951a/mgf4952a12ghzmgf4951a+1mgf4952a
|
PDF
|
low noise hemt transistor
Abstract: InGaAs HEMT mitsubishi MGF4951A MGF4952A
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
|
Original
|
mgf4951a/mgf4952a12ghzmgf4951amgf4952a+4ord14850-ohmlow noise hemt transistoringaas hemt mitsubishi
|
PDF
|
C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
|
Original
|
m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776
|
PDF
|
FET 748
Abstract: MGF4951A MGF4951 MGF4952A 4952A ta 1223
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4951A/4952A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package Outline Drawing DESCRIPTION The MGF495*A super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
OCR Scan
|
mgf4951a/4952amgf49512ghzmgf4951a+5mgf4952afet 748mgf49514952ata 1223
|
PDF
|
MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
|
Original
|
2sa19772sa19782sc23512sc3355+162sc33572sc35452sc35832sc35852sc40932sc4094mrf947t1 equivalentmrf947t1 equivalent transistornj1006bfp320fll120mkfll101memgf4919gfujitsu gaas fet fhx76lphpma-2086mmbr521l
|
PDF
|