METALLISED Search Results

Contextual Info: TetraFET D2293UK METAL GATE RF SILICON FET MECHANICAL DATA O A B C K H I E J F L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED G 4 PLS N M D • SIMPLIFIED AMPLIFIER DESIGN (2 PLS) SOT 171 PIN 1 SOURCE PIN 2 SOURCE

Harting

Abstract: harting cable
Contextual Info: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 EMC housing EMC with HARTING connectors according to DIN 41 612 HARTING offers metallised D20 housings and full metal housings for EMC connectors according to DIN 41 612. Its strong EMI characteristics and

9986

Abstract: metallised
Contextual Info: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 Shell housing D 20 metallised for types F, H and MH I Identification Part No. Shell housing D 20/2 metallised II Drawing Dimensions in mm Order inserts separately with two side

4-40UNC-2A

Abstract: MH Connectors
Contextual Info: Drawing No. 64 MHDTPK - Metallised Plastic D Hoods Top Entry 1 2 3 Gr ommet Set Halves 4 Enlargement of Grommet Halve r~\ 0 11.8 0 6.0 After 0.7 Pitch Knurl 8 EX Grommet Dimensions 42.0 B Number Dia. 1 4.0 2 5.0 3 7.0 4 10.0 Dim. A Dim. B 47.0 0 3.0 Ways 15.0

4046

Abstract: NFTF 4046-A 4046a
Contextual Info: —Srartdard Valves 4046-A Valve 4046-A VALVE PENTODE. SPECIFICATION. Cathode. Indirectly heated oxide coated. Constant voltage type. Base. Standard British 5-pin. Anode connected to top cap type B. r Bulb metallised and connected to cathode. Dimensions. Max. overall length

D1284

Contextual Info: TetraFET D1284UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches 9.65 10.66 4.82 5.33 3.83 Dia. 4.08 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 12V – 200MHz SINGLE ENDED 4.19 4.82 1.14 1.39 2.66 3.42 1.01 Rad. 1.52

D1203UK

Contextual Info: TetraFET D1203UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W – 12.5V – 500MHz SINGLE ENDED A B C 2 1 D 4 E 3 M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

D1202UK

Contextual Info: TetraFET D1202UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2293UK

Contextual Info: TetraFET D2293UK METAL GATE RF SILICON FET MECHANICAL DATA O A B C K H I E J F L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED G 4 PLS N D M (2 PLS) SOT 171 PIN 1 SOURCE PIN 2 SOURCE PIN 3 GATE PIN 4 DRAIN PIN 5

D2220

Contextual Info: PR EL IM INA RY TetraFET D2220UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

D1011UK

Contextual Info: TetraFET D1011UK.01 METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 21W PEP – 28V – 150MHz H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS

D2002UK

Contextual Info: TetraFET D2002UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

d2219uk

Contextual Info: PR EL IM INA RY TetraFET D2219UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

D2001UK

Contextual Info: TetraFET D2001UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2005UK

Contextual Info: TetraFET D2005UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2010

Abstract: D2010UK
Contextual Info: TetraFET D2010UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D2205UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 12.5V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

SMRF1001

Contextual Info: TetraFET SEME SMRF1001 LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH – PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN PIN 1 SOURCE COMMON PIN 2 DRAIN 1 PIN 3 DRAIN 2 PIN 4 GATE2

transistor D2012

Contextual Info: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2022UK

Contextual Info: TetraFET D2022UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 500MHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

d5030

Abstract: D5030UK 064R
Contextual Info: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

D1014

Abstract: BV-70
Contextual Info: POIN T NINE D1014 D1014 TetraFET TetraFET Te c h n o l o g i e s , I n c . 20W - 28V - 500MHz GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET FEATURES • METAL GATE • • • • • ABSOLUTE MAXIMUM RATINGS EXTRA LOW Crss BROAD BAND SIMPLE BIAS CIRCUITS

D1028UK

Abstract: siemens plc 300w rf amplifier uhf EXE18 Storm Products T21N coaxial plc cable EXE18 19/30 S1TW coaxial cable "storm products"
Contextual Info: TetraFET D1028UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

D2011UK

Contextual Info: TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 3 6 F A 5 4 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source PIN 2 Drain PIN 6 Gate