MEMORY 1 KB Search Results

Contextual Info: 0S1992/DS1993/DS1994 D S 1 9 9 2 /D S 1 9 9 3 DALLAS SEMICONDUCTOR 1 Kbit/4Kbit Touch Memory DS1994 4Kbit Plus Time Touch Memory SPECIAL FEATURES • Standard 16 mm diameter and 1-W ire protocol ensure compatibility with Touch Memory family • 4096 bits of read/write nonvolatile memory DS1993

SLE66R35R

Abstract: D8172 SLE66R35 66R35R SLE66 SLE66R35C serial communication of cardreader ISO 14443-2 66R35I 66R35E7
Contextual Info: SLE 66R35 Intelligent 1 kByte Memory Chip with Mifare compatibility and 4-byte UID SLE 66R35I Intelligent 1 kByte Memory Chip with Mifare compatibility and 4-byte Fixed Non Unique IDentification Number SLE 66R35R Intelligent 1 kByte Memory Chip with Mifare compatibility and

D8172

Contextual Info: SLE 66R35 Intelligent 1 kByte Memory Chip with Mifare compatibility and 4-byte UID S LE 66R35I Intelligent 1 kByte Memory Chip with Mifare compatibility and 4-byte Fixed Non Unique IDentification Number S LE 66R35R Intelligent 1 kByte Memory Chip with Mifare compatibility and

Contextual Info: D S 1992 /D S 19 9 3 /D S 1994 DS1992/DS 1993 DALLAS SEMICONDUCTOR 1 Kbit/4Kbit Touch Memory DS1994 4Kbit Plus Time Touch Memory SPECIAL FEATURES • Standard 16 mm diameter and 1-W ire protocol ensure compatibility with Touch Memory family • 4096 bits of read/write nonvolatile memory DS1993

DS1994

Abstract: DS1993L-F5
Contextual Info: DS1992/DS1993/DS1994 A DALLAS W SEMICONDUCTOR DS1992/DS1993 1 Kbit/4Kbit Memory ¡Button DS1994 4Kbit Plus Time Memory {Button SPECIAL FEATURES • 4096 bits of read/write nonvolatile memory DS1993 and DS1994 • 1024 bits of read/write nonvolatile memory {DS1992)

4-Bit Microcomputers

Abstract: sharp calculator SM3514
Contextual Info: Lineup of 4-Bit Microcomputers For Data Bank Use SHARP Product Selection By Built-In Memory Size Built-in data RAM(bit) Approximate telephone listing 1 • 1 1 64 k c 400 persons memory (SM3512) 1 1 1 1 1 1 (SM3508) 24 k 156 persons memory ÌCSM3518} 1 1

100nJ capacitor

Abstract: capacitor 100nj 100 SAA55XX Philips TV front end module SAA5543PS 12x10 character 12x10 on screen display 87F2h RESISTOR COLOUR CODING th02
Contextual Info: Philips Semiconductors Preliminary specification TV microcontrollers with Closed Captioning CC and On-Screen Display (OSD) CONTENTS 15.1 l2C-bus port selection 16 MEMORY INTERFACE Memory structure Memory mapping Addressing memory Page clearing 1 FEATURES

rolling display using led matrix

Abstract: SAA5562PS SAA5533 12x10 character 12x10 on screen display EIA-608 colour television block diagram microcontroller based dot matrix message display philips 23 rgb led moving message display
Contextual Info: Philips Semiconductors Preliminary specification Enhanced TV microcontrollers with On-Screen Display OSD CONTENTS SAA55xx 17 MEMORY INTERFACE Memory structure Memory mapping Addressing memory Page clearing 1 FEATURES 2 GENERAL DESCRIPTION 3 QUICK REFERENCE DATA

mask eeprom

Abstract: eeprom protect
Contextual Info: Chapter 1 4 Kbyte EEPROM Module S12EETS4KV1 1.1 Introduction This document describes the EETS4K module which is a 4 Kbyte EEPROM (nonvolatile) memory. The EETS4K block uses a small sector Flash memory to emulate EEPROM functionality. It is an array of electrically erasable and programmable, nonvolatile memory. The EEPROM memory is organized as 2048

Contextual Info: DALLAS SEMICONDUCTOR DS1982 1 Kbit A dd-O nly Touch Memory SPECIAL FEATURES COMMON TOUCH MEMORY FEATURES • 1024-bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory-lasered and tested 64 -bit registra­

Contextual Info: June 1997 FLASH MEMORY LH28F016SANS-70 Ver. 1.0 SHARP CORPORATION Engineering Department 2 Rash Memory Development Center Tenri Integrated Circuits 1C Group 1 LH28F016SANS-70 16 Mbit (1 Mbit x 16, 2 Mbit x 8) Flash Memory CONTENTS FEATURES PAGE . 2

a737

Abstract: CD433 A769 A431 Programmable Voltage Reference a768 d480 A431 A432 A433 AT88SC1003
Contextual Info: 1. Features • Compatible with Many Existing Memory Card Applications • 1-Kbit EEPROM User Memory • • • • • – Two 256 x 1 Application Zones – One 512 x 1 Application Zone – Protected by Security Logic – Vpp Internally Generated for Single Voltage Operation

roundup

Abstract: CY2308 CY7C1352 MT90503
Contextual Info: ZLAN-14 Applications of the MT90503 External SRAM Memory Application Note Contents Issue 1 1.0 Introduction 2.0 Control and Data Memory 2.1 Control Memory Interface 2.2 Data Memory Interface 3.0 Clock Distribution 4.0 Calculating External SRAM Required 4.1 Control SRAM Required

SLE66R35

Abstract: 66R35N MCC8 66R35 mcc8-2-3 14443 wafer card programmable SLE66R35N memory card circuit diagram SLE66R35E7
Contextual Info: SLE 66R35 Intelligent 1 kByte Memory Chip with Mifare compatibility and 4 byte UID SLE 66R35N Intelligent 1 kByte Memory Chip with Mifare compatibility and 4 byte Fixed Non Unique IDentification Number Short Product Information November 2010 Preliminary Chip Card & Security

ch1f

Abstract: fe05
Contextual Info: General Retease Specification — MC68HC 9 08EB8 Section 2. Memory Map 2.1 Contents 2.2 Introduction 41 2.3 I/O Section 43 2.2 Introduction The CPU08 can address 64 Kbytes of memory space. The memory map, shown in Figure 2-1 , includes: • 7,680 bytes of FLASH EEPROM

P5C1

Abstract: ST90158 R226 R227 R228 R255 p6c0
Contextual Info: APPLICATION NOTE ST9+ EXTERNAL MEMORY INTERFACE CONFIGURATION by Microcontroller Division Applications 1 INTRODUCTION This application note presents the different ST9+ resources for configuring and initializing its external memory interface. The ST9+ has a single 4 Mbyte memory space segmented in 64 segments of 64 Kbytes, plus

R226

Abstract: R227 R228 R255 fch 1621 DS2N
Contextual Info: APPLICATION NOTE ST9+ EXTERNAL MEMORY INTERFACE CONFIGURATION by Microcontroller Division Applications 1 INTRODUCTION This application note presents the different ST9+ resources for configuring and initializing its external memory interface. The ST9+ has a single 4 Mbyte memory space segmented in 64 segments of 64 Kbytes, plus

0X00

Abstract: TNETA1561
Contextual Info: TNETA 1561 Programmer’s Reference Guide Revision 1.0 1 Preliminary Data 1. Data Structures 1.1 Transmit Side The TNETA 1561 transmit side data structures reside both in the host memory and the local control memory. Host Memory Transmit Descriptor Rings Transmit Completion Rings

A769

Abstract: a766 CD433 D772 d768 a737 AX. A431 d480 cd1536
Contextual Info: Features • Compatible with Many Existing Memory Card Applications • 1-Kbit EEPROM User Memory • • • • • – Two 256 x 1 Application Zones – One 512 x 1 Application Zone – Protected by Security Logic – Vpp Internally Generated for Single Voltage Operation

serial flash M25P10

Abstract: M25P10 ST10
Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)

Am29 Flash Family

Abstract: spansion rom 32 mbit Parallel NOR Flash Market AM29 NOR FLASH 1.8v 256 mb nor flash
Contextual Info: Flash Memory: An Overview Application Note 1. Introduction All computer-based systems contain memory. Memory is where information is stored while waiting to be operated on by the Central Processing Unit CPU of the computer. There are two types of memory: volatile

80C51

Abstract: MSU2958 MSU2958C16 MSU2958C25 MSU2958C40 ZD 103
Contextual Info: • ■ MSU2958 Preliminary MOSEL VITEUC INC. ü September 1999 8 Product List - Bit Micro-controller with 3SKB flash embedded MSU2958 C 1 6 ,16 MHz 32 KB internal memory MCU MSU2958 C25, 25 MHz 32 KB internal memory MCU MSU2958 C40,40 MHz 32 KB internal memory MCU

Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)

Contextual Info: MEMORYS 3-WIRE SERIAL E2PROM S-29L/U/Z series SPECIFICATIONS Operating voltage Function Memory size Product name 1 Kb S-29L130A Instruction code Continuous Memory CS read protection*2 active*3 operation*1 H NM93CS46 compatible Yes 64 S-29L131A NM93CS46 compatible