MDB Search Results

Contextual Info: 7 8 6 5 3 4 1 2 REVISIONS REV. EAR .020 0.51 F 13741 DESCRIPTION DATE APPROVED NOTE UPDAATES JUL06/10 K.L .075 1.90 F F .271 6.88 .181 4.59 1.099 27.90 E E GASKET SHELL .737 18.73 EPOXY SEAL D D MDB-E09PA-765 IS SHOWN .120 3.05 2 HOLES .118 3.00 NOTES: .494

MD1-15P

Abstract: MD1-15S
Contextual Info: Micro-D Plastic Shell - .050" Contact Spacing M D/M DV Performance and M aterial Specifications MATERIALS AND FINISHES Shell/Insulator One Piece ELECTRICAL DATA MD/MDB: Glass-filled ther­ moset plastic MDV/MDVB: Thermoplastic Contacts -Copper alloy, gold plate

ARCO 308

Abstract: DV2805 DV2805S arco 139 arco capacitors 462 CREN
Contextual Info: n/A-con p h i inc as de J s&iHesos □□□D43ti a B ~r- ^9 07 DV2805S 5 n-channel enhancement-mode RF Power FETs designed for. «« 20"3|w HF/VHF Amplifiers Class A, B, or C High Dynamic Range Amp MdB Absolute Maximum Ratings 25°o Benefits 20:1 VSWR

S8834

Contextual Info: TOSHIBA MICROWAVE POWER Ga As FET MICROWAVE SEMICONDUCTOR S8834 TECHNICAL DATA FEATURES: • SUITABLE FOR Ç-BAND AM PLIFIER M ED IU M POWER IdB = 21 dBm at f = 8 G Hz ION IMPLANTATION HJGH GAIN MdB = 9 dB at f = 8 G Hz RF PERFORMANCE SPECIFICATIONS Ta = 25° C

G8370-10

Abstract: KIRD1058E01 SE-171
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area φ10 mm Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ.

back Tunnel diode

Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

Contextual Info: MDB6S / MDB8S / MDB10S 1A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30A (max) Glass Passivated Junction Rectifiers UL Certification : E352360

mdb interface

Abstract: MDB-9-8-1 MDB Resistor
Contextual Info: MDB-9-8-X Fibre Channel MIA - 2.125 GBaud Features n n n n n n SC Duplex Optical Interface DB-9 Electrical Interface 75 ohm Input / Output Single +5V Power Supply Class 1 Laser Safety Compliance UL 1950 Approved Y R A PRODUCT OVERVIEW The MDB-9-8-X Extender module is a high performance

mcb DATASHEET

Abstract: l45c sfsh mcb design Ceramic Filter CERAMIC FILTERS murata
Contextual Info: TOKEN LTS MCB/MDB Ceramic Filters Ceramic Filters Low Spurious for TV/VCR Stage Token LTS MCB/MDB Ceramic Filter is suitable for Multiplex Sound TV in America Preview Token series ceramic filters low spurious for TV/VCR stage LTS MCB/MDB series use thickness shear vibration

B104SN02

Abstract: B104SN01 19K-20P-1H 200H BHR-03VS-1 SM02 SM03 au optronics MDGD104-SN02-0
Contextual Info: Spec. No.: MDGD104-SN02-0 Version: 0.3 Total pages: 20 Date: 2003- December-03 AU OPTRONICS CORPORATION Product Functional Specifications 10.4” SVGA Color TFT-LCD Module Model Name: B104SN02 V.0 Approved by Martin Sun Prepared by Cynthia Lin GD- MDBU Marketing Division / AU Optronics Croporation

MDB44

Contextual Info: 44 Lead Thin Small Outline Package EIAJ Type II NS Package Number MDB44 All dimensions are in millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

HMC-MDB207

Contextual Info: HMC-MDB207 v02.0209 MIXERS - I/Q MIXERS / IRM - CHIP 3 GaAs MMIC I/Q MIXER 55 - 64 GHz Typical Applications Features This HMC-MDB207 is ideal for: Wide IF Bandwidth: DC - 3 GHz • Point-to-Point Radios High Image Rejection: 30 dB • Military Radar, ECM & EW

Contextual Info: 7 8 6 5 3 4 1 2 REV DESCRIPT DATE - APPRVD B - NOTE UPDATES EAR 13741 - JUL06/10 - K.L C - COVER UPDATE (EAR 13954) - SEP22/11 - K.L .730 18.55 .271 6.87 F .020 0.51 . F .075 1.90 1.105 28.07 .181 4.59 E E HOUSING SHELL .645 16.38 GASKET EPOXY SEAL MDB-E09SE-765 IS SHOWN

Contextual Info: 7 8 6 5 3 4 1 2 REV DESCRIPT DATE - APPRVD E - NOTE UPDATES EAR 13741 - JUL06/10 - K.L .730 18.55 .271 6.87 F .020 0.51 . F .075 1.90 1.105 28.07 .181 4.59 E E HOUSING SHELL GASKET EPOXY SEAL .645 16.38 MDB-E09SA-765 IS SHOWN D .120 3.05 2 HOLES .313 7.95

Contextual Info: MDB6S / MDB8S / MDB10S 1 A, MicroDIP, Single-Phase Bridge Rectifiers Features • • • • • Low Package Profile: 1.45 mm max Requires Only 35 mm2 of Board Space High Surge Current Capability: 30 A (max) Glass Passivated Junction Rectifiers UL Certification: E352360

Contextual Info: TOKEN LTS MCB/MDB 陶瓷濾波器電視機錄像機系列 錄相機 / 電視機用 陶瓷濾波器 LTS MCB/MDB 系列 - 電視機錄像機用系列（低假響應型陶瓷濾波器） 產品簡介 德鍵電子 LTS MCB/MDB 電視機/錄像機用 系列濾波器 陶瓷濾波器低假響應型 ，應

mmic A

Abstract: shottky diode 56 0209 HMC-MDB169
Contextual Info: HMC-MDB169 v01.0209 MIXERS - DOUBLE-BALANCED - CHIP 4 GaAs MMIC FUNDAMENTAL MIXER, 54 - 64 GHz Typical Applications Features This HMC-MDB169 is ideal for: Passive Double Balanced Topology • Short Haul / High Capacity Radios High LO to RF Isolation: 30 dB

HMC-MDB171

Contextual Info: HMC-MDB171 v01.0209 MIXERS - I/Q MIXERS / IRM - CHIP 3 GaAs MMIC I/Q MIXER 35 - 45 GHz Typical Applications Features This HMC-MDB171 is ideal for: Wide IF Bandwidth: DC - 5 GHz • Point-to-Point Radios High Image Rejection: 25 dB • Military Radar, ECM & EW

MBD5057

Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

Contextual Info: Datasheet for part number MDB1-15PS-K Our Catalog Part Number: MDB1-15PSK Our Global Manufacturing Part Number: 095480-0172 Brand: Cannon Product Category: Micro Product Line: Micros Series: MICRO Product Datasheet Series Arrangement Gender Contact Material

Contextual Info: HMC-MDB207 v01.0208 MIXERS - I/Q MIXERS / IRM - CHIP 3 GaAs MMIC I/Q MIXER 55 - 64 GHz Typical Applications Features This HMC-MDB207 is ideal for: Wide IF Bandwidth: DC - 3 GHz • Point-to-Point Radios High Image Rejection: 30 dB • Military Radar, ECM & EW

HMC-MDB207

Abstract: mixers circuit using 90 degree hybrid
Contextual Info: HMC-MDB207 v00.0907 MIXERS - I/Q MIXERS / IRM - CHIP 3 GaAs MMIC I/Q MIXER 55 - 64 GHz Typical Applications Features This HMC-MDB207 is ideal for: Wide IF Bandwidth: DC - 3 GHz • Point-to-Point Radios High Image Rejection: 30 dB • Military Radar, ECM & EW

SG03

Contextual Info: MDB-MDB-MDB-05S ABOWEI B ro a d b a n d D o u b le -b a la n c e d M ix e r BO W EI INTEG RATED CIR C U ITS CO.,LTD. Features • LO drive level : +7dBm typ • LO&RF frequency range:10— 1500MHz • High port-to-port isolation • Low Conversion Loss, 5 0 ^ impedance

26B0

Abstract: amp 822030 B334 jedec MO-116
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AG 53 REVISIONS LTR DESCRIPTION S A D 1 7 .3 7 [.290] APVD 08JUN06 JDP MDB REVISED PER E C O -0 6 -0 0 2 4 2 3 H O U S I N G - M A T E R I A L : LIQU ID —C R Y S T A L — P O L Y M E R .