MCH3335
Abstract: TA-3782
Contextual Info: MCH3335 注文コード No. N 8 2 2 8 三洋半導体データシート N MCH3335 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。
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mch3335900mm2--400ma--15v+3it09254it09255ta-3782
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MCH3335
Abstract: MCH5810 SBS011
Contextual Info: MCH5810 Ordering number : ENN8194 MCH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • • • Composite type with a P-Channel Sillicon MOSFET MCH3335 and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting.
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CPH6610
Abstract: MCH3335 CPH6610 marking
Contextual Info: CPH6610 Ordering number : ENN8167 CPH6610 N-Channel and P-Channel Silicon MOSFETs Load Switching Applications Features • • The CPH6610 incorporates a P-channel MOSFET MCH3335 and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
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022OHM
Abstract: MCH3335
Contextual Info: MCH3335 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 -0.796 NLX 3.20E-07 DVT2 -0.01 UB 1.00E-21 AGS 0.92 RDSW 5.32E+03 WINT -2.07.E-03 NFACTOR 0.78 CDSCD PCLM 1.48 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 3.00E-11
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mch333520e-0700e-2100e-11+770e-100e-0780e-0732997e-632997e-1250e-08022ohm
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CPH6610
Abstract: MCH3335 MCH3408
Contextual Info: CPH6610 注文コード No. N 8 1 6 7 三洋半導体データシート N CPH6610 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ ロードスイッチング用 特長 ・低オン抵抗超高速スイッチングの P チャネル MCH3335 および N チャネル MOS 形電界効果トランジスタ
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cph6610mch3335mch3408900mm2+3700ma400mait08165
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MCH3335
Abstract: marking yl
Contextual Info: MCH3335 Ordering number : ENN8228 P-Channel Silicon MOSFET MCH3335 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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ep51ecph6605mch6613ech8609+16cph3424cph3427k3614fw343fw356fw360on line ups circuit diagrams2sk3850242mssfp packagek34923ln03mch3435cph5612three phase on line ups circuit diagramstn6r04
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2SC3953-SPICE
Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f
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12a02ch-spice12a02ch2sb12052sc3953-spice+92sa1538 spice2sc3953 spice2sc5610mje-3602sc45482sk40962sb631k2sc5706 equivalent2sc2911-spice
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MCH3335
Abstract: MCH5810 SBS011
Contextual Info: MCH5810 注文コード No. N 8 1 9 4 三洋半導体データシート N MCH5810 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 特長 ・P チャネル MOS 形電界効果トランジスタ（MCH3335）
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