MBRS140 Search Results

403A-03

Abstract: CASE 403A B140 MBRS140T3
Contextual Info: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

Contextual Info: VS-MBRS140TRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

DIODE MARKING EJL

Contextual Info: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

marking b14 diode

Abstract: diode b14 b14 diode surface mount b14 smb diode diode schottky B14 marking code B14 diode MARKING CODE B14 marking B14
Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

PD-20591

Abstract: MBRS140TR AN-994 IR14
Contextual Info: Bulletin PD-20591 rev. C 03/03 MBRS140TR SCHOTTKY RECTIFIER 1 Amp SMB Description/ Features Major Ratings and Characteristics Characteristics MBRS140TR Units IF AV Rectangular waveform 1.0 A VRRM 40 V I FSM @ tp = 5 µs sine 380 A VF @ 1.0 Apk, TJ=125°C

B14 diode on semiconductor

Abstract: marking b14 on semiconductor B14 MARKING marking b14 diode marking code B14 marking code onsemi Diode B14 MBRS140T3 B14 marking code b14 diode surface mount b14 smb diode
Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

schottky DIODE MOTOROLA B14

Abstract: b14 smb diode motorola diode marking B14 BRS140T3
Contextual Info: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier M BRS140T3 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with

AN-994

Abstract: IR14 MBRS140TR schottky diode SMB marking code 120
Contextual Info: Bulletin PD-20404 07/04 MBRS140TRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 40V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 40 V I FSM @ tp = 5 µs sine 380 A VF @ 1.0 Apk, T J=125°C

MBRS120

Abstract: MBRS130
Contextual Info: MBRS120-MBRS140 SENSITRON 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE SEMICONDUCTOR Data Sheet 2931, Rev. - Features Schottky Barrier Chip Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak D For Use in Low Voltage Application

B14L

Abstract: FR4 epoxy
Contextual Info: MBRS140LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

B140

Abstract: MBRS140
Contextual Info: MBRS140 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

Contextual Info: Bulletin PD-20591 rev. B 05/02 MBRS140TR SCHOTTKY RECTIFIER 1 Amp SMB Description/Features Major Ratings and Characteristics Characteristics MBRS140TR Units IF AV Rectangular waveform 1.0 A VRRM 40 V I FSM @ tp = 5 µs sine 380 A VF @ 1.0 Apk, TJ=125°C 0.53

Contextual Info: MOTOROLA Order this document by MBRS140LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Schottky Power Rectifier MBRS140LT3 SMB Power Surface Mount Package . . . em ploying the S chottky B arrier principle in a m e ta l-to -s ilic o n power

18L3

Abstract: B140 CBVK741B019 D0-214AA F63TNR F924 MBRS140 SS22
Contextual Info: MBRS140 MBRS140 Features • Compact surface mount with J-bend leads SMB • 1.5 Watt Power Dissipation package • 1.0 Ampere, forward voltage less than 600 mV SMB (D0-214AA) Color Band Denotes Cathode Top Mark: B140 1.0 Schottky Power Rectifier Absolute Maximum Ratings*

diode b140

Abstract: B140 MBRS140 DO-214AA package
Contextual Info: MBRS140 SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a

DIODE MOTOROLA B14

Abstract: 403A-03 schottky DIODE MOTOROLA B14 motorola diode marking B14 MBRS140T3
Contextual Info: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

403A-03

Abstract: MBRS130LT3 MBRS1100T3
Contextual Info: SMB Devices Maximum die size 64 mil x 64 mil CASE 403A-03 Rectifiers — Schottky Device MBRS130LT3 MBRS140T3 MBRS1100T3 V rrm Volts k> Amps •fsm Amps Vf @25°C Volts lR @ 25°C mA 30 40 100 1 1 1 40 40 40 0.395 0.600 0.750 1.000 1.000 0.500 V rrm Volts

Contextual Info: MBRS140LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: VS-MBRS140TRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

Contextual Info: Bulletin PD-20591 rev. E 07/04 MBRS140TR SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 40V Description/ Features Major Ratings and Characteristics Characteristics MBRS140TR Units The MBRS140TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small

Contextual Info: Bulletin PD-20404 07/04 MBRS140TRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0Amp VR = 40V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 40 V I FSM @ tp = 5 µs sine 380 A VF @ 1.0 Apk, T J=125°C

marking B14 diode

Abstract: b14 smb diode
Contextual Info: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS140

Contextual Info: MBRS140 SCHOTTKY BARRIER RECTIFIER SMB DO-214AA Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage,

MBRS340T3G

Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
Contextual Info: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG