MBR251 Search Results

B2515L

Abstract: MBR2515L
Contextual Info: MOTOROLA Order this document by MBR2515L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR2515L . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

MBR2505

Abstract: MBR251 MBR252 MBR254
Contextual Info: MBR2505 THRU MBR2510 DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation

MBR2515L

Abstract: MBR2515LG B2515L diode B2515L
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier The MBR2515L employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency

Contextual Info: MBR2535CT - MBR25150CT CREAT BY ART 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

Contextual Info: MOTOROLA Order this document by MBR2515L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SW ITCH MODE Power R ectifier . . . em p lo ying the S cho ttky B arrier princip le in a large m e ta l-to -s ilic o n pow er diod e. S ta te - o f- th e - a r t ge o m e try fe a tu re s e p ita xia l co n stru ctio n w ith oxide

MBR 2535 package

Abstract: MBR2560
Contextual Info: MBR2535CT - MBR25150CT CREAT BY ART 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

b2515l

Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*

MBR2535CT

Abstract: MBR2550CT MBR2560CT MBR2560
Contextual Info: MBR2535CT - MBR25150CT 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop

TC130

Abstract: MBR 2535 MBR2535CT MBR2550CT MBR2560CT
Contextual Info: MBR2535CT - MBR25150CT 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop

Schottky

Contextual Info: MBR2535CT thru MBR25150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

MBR25100

Abstract: MBR 100V 25A MBR2535
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR2520 THRU MBR25100 Features • • • • Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency

Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR2520 THRU MBR25100 Features • • • • Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency

TLS 2550

Abstract: 202C 231S MBR2535CT MBR25XXCT mbr2345 2sa 102 mbr 2345 marking u32
Contextual Info: E TAIWAN SEMICONDUCTOR MBR2535CT - MBR25150CT 25.0 AMPS. Schottky Barrier Rectifiers RoHS TO-220AB C O M P L IA N C E J Features P la a tk i m a te ria l u s e d c a r rie s U n d e r w r ite r s L a b o ra to r y C la s s ific a tio n s & 4 V -0 M e ta l s ilic o n ju n c tio n , m e jo r ity c a r rie r c o n d u c tio n

B2515

Abstract: B2515L MBR2515L MBR2515LG 100-C1210
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER

MBR25100CT

Abstract: 50CT MBR2535CT 24 V DC to 3 Phase 220 v INVERTERS
Contextual Info: MBR2535CT THRU MBR25100CT 25.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 25.0 Amperes TO-220 Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

2530CT

Abstract: MBR25100CT 2535CT 2540CT 2545CT
Contextual Info: BL GALAXY ELECTRICAL MBR2530CT-MBR25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AB High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications .

Contextual Info: MBR2535CT thru MBR25150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MBR2535CT - MBR25150CT 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop

Contextual Info: MBR2535CT - MBR25150CT 25.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop

B2515L

Abstract: Single Schottky diode TO-220 1.0 ampere schottky power rectifier diode RECTIFIER DIODES ON Semiconductor DATA BOOK 81 210 W 20 marking CODE 91 MBR2515LG Rectifier 6 amp 200 volt rectifier diode 20 amp 800 volt MBR2515L
Contextual Info: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER

LE-12T

Contextual Info: s TAIWAN SEMICONDUCTOR MBR2535CT - MBR25150CT 25.0 AMPS. Schottky Barrier Rectifiers RoHS TO-220AB COM PLIANCE :<i. n:;' mi + x ;tr: 1 ’ I- V M I Features P la s t h m a te ria l u s e d c a r rie s U n d e r w r ite rs L a b o ra to r y C la s s ific a tio n s & 4 V -0

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR2520 THRU MBR25100 Features • • • • Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency

Schottky

Contextual Info: MBR2545CT-Y thru MBR25150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and