2540CT Search Results

2550CT

Contextual Info: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 25 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

2545ct

Abstract: 2520CT 2530CT 2540CT SB25100CT SB2520CT
Contextual Info: WTE POWER SEMICONDUCTORS SB2520CT – SB25100CT Pb 25A DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability

Contextual Info: WTE POWER SEMICONDUCTORS SB2520CT – SB25100CT Pb 25A DUAL SCHOTTKY BARRIER RECTIFIER Features  Schottky Barrier Chip      Guard Ring for Transient Protection Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability

sblb

Abstract: 80CT 2530CT 2535CT 2540CT 2545CT SBLB2530CT
Contextual Info: BL GALAXY ELECTRICAL SBLB2530CT - - - SBLB25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 25 A SCHOTTKY BARRIER RECTIFIER FEATURES D2PAK Metal-Semiconductor junction with guard ring Epitaxial construction 0.190 4.83 0.172(4.37) 0.421(10.69) 0.380(9.65) Low forward voltage drop,low switching losses

tc100 le

Abstract: 2530CT 2535CT 2540CT 2545CT SBL2530CT
Contextual Info: BLGALAXY ELECTRICAL SBL2530CT - - - SBL25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 25 A SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AB Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability

1000C

Abstract: 2530CT 2540CT SB2520CT sb25150ct
Contextual Info: SB2520CT thru SB25150CT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 TO 150 VOLTS CURRENT - 25 AMPERES TO-220AB FEATURES MECHANICAL DATA Plastic Package has Underwriters Laboratory Flammability Classification 94-0 utilizing Flame Retardant Epoxy Molding Compound

Contextual Info: - N AMER PHILIPS/DISCRETE 25E D B PBYR2535CTF 2540CTF PBYR2545CTF bb53T31 0022=163 0 B 7- 0 3 - ft SCHOTTKY-BARRIER DOUBLE RECTIFIER DIO DES Low-leakage platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. Their electrical

30 MBR

Abstract: 2540CT 2535c 2530CT 2535CT 2545CT MBR2530CT MBR2560CT
Contextual Info: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

2545CT

Contextual Info: SB2520CT – SB25100CT 25A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

2530CT

Abstract: MBR25100CT 2535CT 2540CT 2545CT
Contextual Info: BL GALAXY ELECTRICAL MBR2530CT-MBR25100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A SCHOTTKY BARRIER RECTIFIER FEATURES TO-220AB High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications .

Contextual Info: SB2520CT – SB25100CT WTE POWER SEMICONDUCTORS 25A SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection High Current Capability, Low Forward C Low Reverse Leakage Current High Surge Current Capability G

Contextual Info: PBYR2535CTF 2540CTF PBYR2545CTF SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. Their electrical

m3181

Abstract: PBYR2535CT SM 4c diode 2540CT
Contextual Info: PBYR2535CT 2540CT PBYR2545CT SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended for use in switched-mode

AO4A

Contextual Info: QSFCT540T, 541T, 2540T, 2541T High Speed CMOS 8-Bit Buffer/Line Drivers D u u e f/u in e u n v e i l Q qs54/74fct254ot QS54/74FCT2541T FEATURES/BENEFITS • Pin and function compatible to the 74F540/541 74FCT540/541 and 74ABT540/541 • CMOS power levels: <7.5 mW static

Contextual Info: QSFCT540T, 541T, 2540T, 2541T Q High Speed CMOS 8-Bit Buffer/Line Drivers S S ^ ÎfcÏ m ÎÏ “ S FEATURES/BENEFITS • Pin and function compatible to the 74F540/541 74FCT540/541 and 74ABT540/541 • CMOS power levels: <7.5 mW static • Available in DIP, SOIC, QSOP, ZIP, HQSOPW

SRB2520CT

Abstract: TO-263AB 2520CT 2530CT 2535CT 2540CT 2545CT
Contextual Info: SRB2520CT THUR SRB2560CT TO-263AB 0.190 4.83 Plastic package Underwriters Laboratory Flammability Classification 94V-0 0.160(4.06) 0.420(10.67) 0.055(1.39) 0.380(9.65) Dual rectifier construction, positive center tap Metal silicon junction Majority carrier conduction

2530CT

Abstract: 2535CT 2540CT 2545CT MBR2530CT MBR2560CT
Contextual Info: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

2530CT

Abstract: 2535CT 2540CT 2545CT MBR2530CT MBR2560CT
Contextual Info: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: SRF2520CT SRF2560CT THUR ITO-220AB 0.190 4.75 0.145(3.55) 0.415(10.54) 0.165(4.25) 0.128(3.25) Max Plastic package Underwriters Laboratory Flammability Classification 94V-0 0.130(3.31) DIA 0.110(2.81) Dual rectifier construction, positive center tap Metal silicon junction

Contextual Info: SR2520CT SR2560CT THUR AB 0.185 4.70 0.154(3.91) 0.415(10.54) 0.175(4.44) 0.148(3.74) Max Plastic package Underwriters Laboratory Flammability Classification 94V-0 0.055(1.39) DIA 0.045(1.14) 0.113(2.87) 0.103(2.82) Dual rectifier construction, positive center tap

2540CT

Abstract: TO-220 JEDEC 2530CT SB25100CT SB2520CT 2520CT
Contextual Info: SB2520CT – SB25100CT WTE POWER SEMICONDUCTORS 25A SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection High Current Capability, Low Forward C Low Reverse Leakage Current High Surge Current Capability G

2530CT

Abstract: 2535CT 2540CT 2545CT MBR2530CT MBR2560CT
Contextual Info: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: PBYR2535CT 2540CT PBYR2545CT B S E D B tjbS 3 T31 0033^77 S B N AMER PHILIPS/DISCRETE SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES 7^ <33-/9 Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in switched-mode

2540CT

Contextual Info: MBR2530CT-MBR25100CT Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A TO-220AB 2.8± 0.1 Features 4.5± 0.2 10.2± 0.2 1.4± 0.2 High s urge capacity. Metal s ilicon junction, m ajority carrier conduction. 1 High current capacity, low forward voltage drop.