MBK116 Search Results

MBK10

Contextual Info: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

PHD45N03LTA

Abstract: PHB45N03LTA PHP45N03LTA a2240
Contextual Info: PHP/PHB/PHD45N03LTA N-channel enhancement mode field-effect transistor Rev. 02 — 02 November 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHP45N03LTA in SOT78 TO-220AB

transistor BR 471 A

Abstract: 74 series PHILIPS PHP95N03LT PHB95N03LT PHE95N03LT
Contextual Info: PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

PHB153NQ08LT

Abstract: PHP153NQ08LT
Contextual Info: PHP/PHB153NQ08LT N-channel TrenchMOS logic level FET Rev. 01 — 31 March 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

PHB145NQ06T

Contextual Info: PHB145NQ06T N-channel TrenchMOS standard level FET Rev. 01 — 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold

13164

Abstract: PHB129NQ04LT PHP129NQ04LT
Contextual Info: PHP/PHB129NQ04LT N-channel TrenchMOS logic level FET Rev. 01 — 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

PSMN015-100B

Abstract: PSMN015-100P
Contextual Info: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

Contextual Info: PHP73N06T; PHB73N06T TrenchMOS standard level FET Rev. 02 — 5 July 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP73N06T in SOT78 TO-220AB

Contextual Info: BUK75150-55A; BUK76150-55A TrenchMOS standard level FET Rev. 01 — 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

PHP71NQ03LT

Abstract: PHB71NQ03LT PHD71NQ03LT
Contextual Info: PHP/PHB/PHD71NQ03LT TrenchMOS logic level FET Rev. 01 — 25 June 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP71NQ03LT in SOT78 TO-220AB

Contextual Info: PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 — 06 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: BUK7511-55A; BUK7611-55A TrenchMOS standard level FET Rev. 01 — 1 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

BUK9540-100A

Abstract: BUK9640-100A
Contextual Info: BUK95/9640-100A TrenchMOS logic level FET Rev. 03 — 08 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability:

BUK7623-75A

Contextual Info: BUK7523-75A; BUK7623-75A TrenchMOS standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

PSMN004-60B

Abstract: PSMN004-60P
Contextual Info: PSMN004-60P/60B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN004-60P in SOT78 TO-220AB

BUK9560-100A

Abstract: BUK9660-100A BUK956
Contextual Info: BUK9560-100A; BUK9660-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

K 3264 fet transistor

Abstract: BUK7608-55A 03NH45 BUK7508-55A VA140
Contextual Info: BUK7508-55A; BUK7608-55A TrenchMOS standard level FET Rev. 02 — 17 January 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

OC202

Abstract: BUK7520-100A BUK7620-100A
Contextual Info: BUK7520-100A; BUK7620-100A TrenchMOS standard level FET Rev. 01 — 5 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

BUK9520-100A

Abstract: BUK9620-100A
Contextual Info: BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 — 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

BUK9535-100A

Abstract: BUK9635-100A
Contextual Info: BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

BUK7535-55A

Contextual Info: BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 — 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Contextual Info: BUK9523-75A; BUK9623-75A TrenchMOS logic level FET Rev. 01 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

PHB29N08T

Abstract: PHP29N08T
Contextual Info: PHP/PHB29N08T TrenchMOS standard level FET Rev. 01 — 29 May 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP29N08T in SOT78 TO-220AB

D 795 A

Contextual Info: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low