MBB037 Search Results

SOT103

Abstract: transistor SOT103 mosfet BF902 marking C1s philips mosfet
Contextual Info: P H ILIP S INTER NATIONAL 41E D B 7110â2b OQEtfl'ÎS T « ¡P H IN T-31-25 Philips S em iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES • • BF902 QUICK REFERENCE DATA Short channel transistor with high ratio IYtsl:Cls

Contextual Info: Product specification Philips Semiconductors GaAIAs high-voltage optocouplers CNG82/CNG83 FEATURES • High output/input current transfer ratio at low input current • High degree of AC and DC insulation 3750 V (RMS and 5300 V (DC) • Input/output pin distance

phototransistor philips

Abstract: 004583 BS415 BS7002 SL5582 SL5583 diode ja diode Optocouplers MBB038
Contextual Info: PHILIPS INTERNATIONAL 41E ]> 711GÖ2b 003D54Ö û • PHIN T - V / - « Philips Sem iconductors 3 Product specification High-voltage optocouplers SL5582/SL5583 FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external

Contextual Info: Philips Sem iconductors Product specification 7 H V D U A L I T Y T E C H N O L O G I E S C0 RP S7E D 74fc>bfl51 000472*1 7fi7 • 3 T Y FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm

Contextual Info: MIE D PHILIPS INTERNATIONAL TllQôSfc» QQ3Q43ti fi BIPHIN T-V /'*3 Philips Semiconductors Product specification Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • W id e body D IL encapsulation, with a pin distance of 1 0 .1 6 m m • M inim um c re e p a g e distance

PHILIPS CNW82

Abstract: philips cnw83 BS415 BS7002 CNW82 CNW83 TRANSISTOR WM 9 transistor wm
Contextual Info: 7110fi5ti OOB O ^ t i ö B I P H I N MIE D PHILIPS INTERNATIONAL 7 - V Philips S em ico n d uctors / - 8 3 P ro du ct s p ecificatio n Wide body, high isolation optocouplers CNW82/CNW83 FEA TUR ES • Wide body DIL encapsulation, with a pin distance of 10.16 mm