MB82 Search Results

Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11424-1E 16 Mbit Mobile FCRAMTM MB82D01181E-60L New released • FEATURES • Asynchronous SRAM interface • Byte Control with LB, UB pin Low Power Consumption Power Down Mode Chip/Wafer Business SRAM compatible pinout FBGA

Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11414-1E 32Mbit Mobile FCRAM 1.8V, Fast Page Mode MB82DPS02183B-80/-80L/-85/-85L New released • FEATURES • • Asynchronous SRAM interface 8 Words Page Address Access Capability _ • • • • • •

Contextual Info: New Products MB82DPS02183B Cellular Phone Application Specific RAM TM Mobile FCRAM with High-Speed Page Mode MB82DPS02183B A further enhanced Mobile FCRAM featuring a high-speed page mode, a 1.8V power supply operation. Introduction Photo 1 External View

F0110

Abstract: 004C2000
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •

MB82D01181E

Abstract: MB82D01181E-60L
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11424-4E MEMORY Mobile FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82D01181E-60L • DESCRIPTION MB82D01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access

Contextual Info: TS270—A893 March 1989 6 4 K - B I T 1 6 , 3 8 4 x 4 B i - C M O S H I G H S P E E D S T A T I C RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high

Contextual Info: September 1990 Edition 1.0 DATA SHEET MB82B88-15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM 32K Words x 8 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu M B82B88 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with C M O S technology. B iC M O S technology is

Contextual Info: FUJITSU MICROELECTRONICS 7fl De| 374ci?t,5 DDDBDHQ M |~~>7z%-%h 7 FU JITSU • MB85101A-10, MB85101A-12, MB85101A-15 MOS 65,536 x 4-Bit Dynamic RAM Module Description The Fujitsu MB85101A Is a 64K x 4 dynamic RAM high density memory module. It consists of (our MB8264A DRAMs In 18-pad

Contextual Info: November 1993 Edition 2.0 FUJITSU DATA SHEET : MB82009-20/-25 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD X 9-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82009 is 131,072-word x 9-bit high speed static random access m em ory fabricated w ith CMOS technology.

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MB82B74-15/-20 64K-BIT HIGH SPEED BI-CMOS SRAM 16,384 WORDS x 4 BITS Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB62B74 is a 16,384-words by 4 -b its static random access memory fabricated

MB8289

Contextual Info: FUJITSU April 1990 Edition 2.0 DATA SHEET MB8289-25/-35 CMOS 288K-BIT HIGH-SPEED SRAM 32K Words x 9 Bits Static Random Access Memory with Automatic Power Down The Fujitsu MB8289 is a 32,768 words x 9 bits static random access memory with parity generator and checker, and fabricated with CMOS technology. To obtain a

f0602

Abstract: MB82DS01181E MB82DS01181E-70LWT-A
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11434-1E MEMORY Mobile FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82DS01181E-70L-A • DESCRIPTION MB82DS01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access

Contextual Info: September 1990 Edition 1.0 - — - 1 . DATASHEET FUJITSU MB82B009-2S 1.152M-BIT HIGH-SPEED BiCMOS SRAM 128K Words x 9 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B009 is a high-speed static random access memory organized as

max1993

Abstract: mb8200
Contextual Info: November 1993 Edition 2.0 FUJITSU DATA S H F F T MB82008-20/-25 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82008 is 131,072-word x 8-bit high speed static random access memory fabricated with CM OS technology.

1I604

Contextual Info: r n r FU J I T S U LTD T\ • S3E » - 37 HT? 5 b 0 0 D S 3 7 S OTÓ « F C A J - ^ - 2 3 ' IX. M a rc h 1991 Edition 2.0 FUJITSU DATA SHEET MB82B79-17/-20 72K-BIT HIGH SPEED BI-CMOS SRAM 8192-WORD x 9-BIT BI-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B79 is a 8,192 words by 9 bits static random access memory

71PIN

Abstract: MB82DBS04163C MB82DBS04163C-70L
Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11425-2E TM 64 Mbit Mobile FCRAM 1.8 V, Burst Mode MB82DBS04163C-70L New released • FEATURES • • • • Asynchronous SRAM interface Complies with Common Specifications for Mobile RAM (COSMORAM) Burst Mode Function (Consecutive Read/Write Operation through Synchronization of System Clocks)

MB82D01160-90LPBT

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01160-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface n DESCRIPTION

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11431-2E MEMORY Mobile FCRAMTM CMOS 64M Bit 4 M word x 16 bit Mobile Phone Application Specific Memory MB82DP04183C-65L • DESCRIPTION The FUJITSU MB82DP04183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous

Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11421-2E 128 Mbit Mobile FCRAMTM 3.0 V Core & 1.8 V I/O, Burst Mode MB82DBR08163-70A New released • FEATURES • • • • Asynchronous SRAM interface Complies with Common Specifications for Mobile RAM (COSMORAM)

Contextual Info: FUJITSU SEMICONDUCTOR NEW PRODUCTS NP05-11439-1E 64 Mbit Mobile FCRAMTM 1.8V, Burst Mode MB82DBS04163D-70L Now developing • FEATURES • • • • Asynchronous SRAM Interface Complies with Common Specifications for Mobile RAM (COSMORAM) Burst Mode Function (Consecutive Read/Write Operation through Synchronization of System Clocks)

Contextual Info: FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11448-1E 64 Mbit Mobile FCRAM 1.8 V, Burst Mode MB82DBS04164E-70L TM FEATURES • • • Pseudo SRAM with Single Data Rate SDR Burst Interface Complies with Common Specifications for Mobile RAM (COSMORAM) Revision 3

F0607

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11434-2E MEMORY Mobile FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82DS01181E-70L-A • DESCRIPTION MB82DS01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11414-2E MEMORY Mobile FCRAMTM CMOS 32M Bit 2 M word x 16 bit Mobile Phone Application Specific Memory MB82DPS02183B-85/-85L CMOS 2,097,152-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-11460-1E MEMORY Mobile FCRAMTM CMOS 32 M Bit 2 M word x 16 bit Mobile Phone Application Specific Memory MB82DP02183F-65L • DESCRIPTION The MB82DP02183F is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static