MB81C258 Search Results

MB81C258-12

Abstract: c258 MB81C258 MB81C258-10
Contextual Info: FU JITSU 262144 BIT CMOS STATIC COLUMN DYNAMIC RAM MB81C258-10 MB81C258-12 MB81C258-15 1 1 1 O c to b e r 1 9 8 8 E d itio n 3 .0 262,144 x 1 BIT CMOS STATIC COLUMN DYNAMIC RAM The Fujitsu MB 81C258 is CMOS static colum n dynam ic random access memo­ ry, SC-DRAM, w hich is organized as 262144 w ord by 1 bit. This SC-DRAM is

MB81C258-12

Contextual Info: 262144 BIT CMOS STATIC COLUMN DYNAMIC RAM MB81C258-10 MB81C258-12 MB81C258-15 O ctob er 1988 E d itio n 3.0 262,144 x 1 BIT CMOS STATIC COLUMN DYNAMIC RAM T he F u jits u M B 8 1 C 2 5 8 is CM O S s ta tic c o lu m n d y n a m ic random access m e m o ­ ry , S C -D R A M , w h ic h is organized as 2 6 2 1 4 4 w o rd b y 1 b it. T his S C -D R A M is

KM41C256-8

Abstract: HM51256P-10 km41c256 HM51256P-12 HM51256LP-10 HM51256P-15 KM41C256-10 HM51256LCP-10 MB81C258-10 HM51256CP-15
Contextual Info: - 2 5 6 K X i m & tt £ OC TRAC max ns) CMOS • ; + TRCY min (ns) TCAD (ns) TAH min (ns) > ? TF mir (ns) D y n a m i c RAM íf li TWCY min (ns) TDH (ns) TRWC min (ns) V D D or V C C (V) 16 P I N ( 2 6 2 1 4 4 X 1 M A M 1 DD max (mA) ti [+typ] 5 12 5 8 ÍÜ

Contextual Info: FU JITSU 262144X 9 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE M B85240-10 M B85240-12 D ecem b er 1 9 8 7 E d itio n 1.0 262,144 x 9 BIT CMOS STATIC COLUMN RANDOM ACCESS MEMORY This Fujitsu MB85240 is a fu lly decoded, 262,144 words x 9 bits CMOS static column random access memory composed o f nine 256k SCRAM chips

LCC 18 Pin Package

Abstract: 26PIN 26-PIN MB81C466-10 20-PIN
Contextual Info: Section 2 CMOS DRAMs — At a Glance Maximum Acc««« Tlm« n« Capacity Package Option« 262144 bits (262144wx 1b) 16-pin 18-pin Plastic Plastic DIP LCC 262144 bits (65536w x 4b) 18-pin 18-pin 20-pin 18-pin 18-pin 20-pin 26-pin Plastic Ceramic Plastic Plastic