MAXIMUM IDSS TRANSISTOR Search Results

2sk1060

Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Contextual Info: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104

Contextual Info: TK80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK80F08K3 Swiching Regulator Low leakage current: IDSS = 10 A (max) (VDS = 75 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)

fp31ff

Abstract: transistor 131 349 2110 FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 QFN-6x6 rohm
Contextual Info: FP31QF The Communications Edge TM Product Information 2-Watt HFET Applications • • • • • • Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain

Contextual Info: V E R Y LOW R o n SWITCHING SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 448-1 LOW R os - IS Ohms MAXIMUM LOW Vp - 3 Volte MAXIMUM HIGH IDSS - 30 mA MINIMUM ELECTRICAL DATA A B SO L U T E M A X IM U M R A T IN G S PARAM ETER Drain to Gate Voltage

Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Pd mW BVGSS (V) min (mA) Yfs mai (mmhos) min m i VGS(oir) Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 min BC264A BC264B BC264C BC264D BF246A TO-92DE

2n5248

Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE

ultra low igss pA mosfet

Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
Contextual Info: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)

TO-92DD

Abstract: BC264B BC264A BC264C BC264D BF246A BF246B BF246C BF247A BF247B
Contextual Info: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS ofF Ciss Crss NF (V) max (piO max (PF) max (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11 + 1.2+ 1.2+ 1.2+ 1.2+ 3.5+ 2 2 2 2 Pd (mW) BVGSS (V) min max (mmhos) min

2SK2701A

Abstract: FKv550n 2sk3003 2SK3801 2SK3199 fkv575
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)

FKV550N

Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)

fkp*253

Abstract: fkv550n FKV550T FKP280 2SK2710a fkv550
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SK1179 500 VGSS (V) ID (A) ±20 ±8.5 ID (pulse) (A) PD (W) ±34 85 IGSS EAS (mJ) 400 (nA) max ±500 VTH IDSS Conditions VGS (V) ±20 (µA) min max Conditions VDS

2sk30

Abstract: FKv550n 2SK3003 2SK3199 2SK2778
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)

FKv550n

Abstract: FKV550T 2SK2848 FKP330C 2SK3004 FKP250A 2SK3710A 2SK3003 2SK2701A 2SK3711
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)

TRANSISTOR 187

Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc IG 10

MMBF4416LT1

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

MMBF5484LT1

Abstract: TO-236A
Contextual Info: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current

MMBF4416LT1

Abstract: ON932 ON732 marking gfg 6f
Contextual Info: MOTOROLA Order this document by MMBF4416LT1/D SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS

Diode Gfg 6f

Abstract: MMBF5484LT1
Contextual Info: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current

MMBF4416LT1

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

MMBF5484LT1

Contextual Info: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Drain–Gate Voltage Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below

MMBF4416LT1

Abstract: MMBF4416LT1G FR 220
Contextual Info: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage

Contextual Info: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below

MMBF5484

Abstract: MMBF5484LT1 MMBF5484LT1G NOR 000 001 170 007
Contextual Info: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below