MARKING Z7 GATE DRIVER Search Results
MARKING Z7 GATE DRIVER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54S40/BCA |
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54S40 - BUFFER/DRIVER, NAND, DUAL 4-INPUT - Dual marked (M38510/07201BCA) |
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| UHD432/883 |
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UHD432 - Quad 2-Input NOR Power/Relay Driver, CDIP14 - Dual marked (5962-8960401CA) |
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| UHD503R/883 |
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UHD503 - Quad OR Power/Relay Driver - Dual marked (5962-8855101CA) |
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| UHD532R/B |
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UHD532 - POWER DRIVER, NOR, QUAD 2-INPUT, 100V - Dual marked (5962-8960403CA) |
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| UHD532/883 |
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UHD532 - POWER DRIVER, NOR, QUAD 2-INPUT, 100V - Dual marked (5962-8960403CA) |
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MARKING Z7 GATE DRIVER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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ATC100A101JP150
Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
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MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14 | |
RO4350BContextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB |
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MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B | |
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Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage |
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MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 | |
AFT504Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this |
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AFT05MS004N AFT05MS004NT1 AFT504 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136 |
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AFT09MS015N AFT09MS015NT1 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136 |
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AFT09MS015N AFT09MS015NT1 | |
A9M15
Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
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AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136 |
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AFT09MS015N AFT09MS015NT1 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB |
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MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1 | |
13007 502
Abstract: motorola marking pld-1.5 package gt 13007 TRANSISTOR
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MRFG35010MT1 MRFG35010MT1 13007 502 motorola marking pld-1.5 package gt 13007 TRANSISTOR | |
marking 0619Contextual Info: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB |
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MRFG35005MT1 MRFG35005MT1 marking 0619 | |
RF FET TRANSISTOR 3 GHZ
Abstract: A113 MRFG35003NT1
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MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1 | |
A113
Abstract: MRFG35005MT1 MRFG35005NT1
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MRFG35005MT1 MRFG35005NT1 MRFG35005NT1 A113 MRFG35005MT1 | |
MWIC930Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its |
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MWIC930 MWIC930R1 MWIC930GR1 | |
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13007 502Contextual Info: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 3, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB |
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MRFG35010MT1 13007 502 | |
6821 Freescale
Abstract: transistor 17556 7682 ADC
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MRFG35003MT1 MRFG35003MT1 6821 Freescale transistor 17556 7682 ADC | |
tc 106-10Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB |
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MRFG35005N MRFG35005NT1 MRFG35005N tc 106-10 | |
capacitor 609
Abstract: Marking Z7 Gate Driver A113 MRFG35005ANT1 MRFG35005NT1 motorola marking pld-1.5 package
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MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1 capacitor 609 Marking Z7 Gate Driver A113 MRFG35005ANT1 motorola marking pld-1.5 package | |
ma 8630Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 2, 6/2005 Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 RF Power Field Effect Transistors Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class |
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MRFG35003MT1 MRFG35003NT1 MRFG35003MT1 ma 8630 | |
Marking Z7 Gate Driver
Abstract: A113 MRFG35003ANT1 MRFG35003NT1 transistor 8772 TC 8644
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MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1 Marking Z7 Gate Driver A113 MRFG35003ANT1 transistor 8772 TC 8644 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB |
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MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1 | |
IRL 724 N
Abstract: MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103
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MRFG35010 MRFG35010R1 IRL 724 N MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103 | |
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Contextual Info: Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010 Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or |
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MRFG35010 | |
DIODE 709 1334Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 8, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010R1 Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or |
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MRFG35010 MRFG35010R1 MRFG35010 DIODE 709 1334 | |