MARKING Y1 Search Results

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

SJS840510

Abstract: M39029 SJS840520 SJS840 amphenol 451
Contextual Info: SJS840510 I REV I ECIM I 6428 HITE MARKING 0.040" HIGH CHARACTERS .244 AP PlT .544 ¡LACK DOT .077 -BLACK MARKING DATE CODE UNL .677 o o APCD YYWWSJS840510 .024 SJS840510 SJS840510 .451 BLACK MARKING |: H r -, \ -1 -— BLACK MARKING TWO SIDES nn\ i SCALE

SJS840310

Contextual Info: SJS840310 I REV APPD~ 6428 HITE MARKING 0.040" HIGH CHARACTERS .244 I ECIM I .544 ,077 LACK DOT BLACK MARKING 5.451 .024 .677 — BLACK MARKING DATE CODE SJS840310 SJS840310 APCD YYWW' SJS840310 IS SCALE ^ 3:1 — BLACK MARKING TWO SIDES VI T .030 NOTES: 1. MATERIALS:

BAS19

Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol

bc490

Abstract: BC490B BC490A BC490AZL1 BC490BZL1
Contextual Info: BC490, BC490A, BC490B High Current Transistors PNP Silicon • Device Marking: 490 Device Marking: 490A Device Marking: 490B http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –80 Vdc Collector-Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

SJS840400

Abstract: Amphenol Pcd
Contextual Info: SJS840400 I REV I ECN HITE MARKING 0.040" HIGH CHARACTER I APP'D~ 6428 .024 BLACK D0T- 3LACK MARKING DATE CODE SJS840400 SJS840400 APCD YYWV\ SJS840400 .663 f? D — — BLACK MARKING TWO SIDES >.528 NOTES: 1. MATERIALS: HOUSING: PA6/6 CONTACT RETAINER: STAINLESS STEEL

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel

SJS840

Contextual Info: SJ5840330 I REV A I ECM I APP'D 16428 HITE MARKING 0.040" HIGH CHARACTER 1.010/0.015 X 30° LEAD-IN CHAMFER FOR INSERTION ONE SIDE ONLY >.750 ANEL CUTOUT THICKNESS 0.045 TO 0.070 SJS840330 SJS840330 HITE MARKING DATE CODE .065 WHITE DOT HTIE MARKING TWO SIDES

SJS840520

Abstract: SJS840510
Contextual Info: SJS840520 I REV I ECN 6443 WHITE MARKING 0.040" HIGH CHARACTER I APP'D Cs .010/0.015 X 30° LEAD-IIM CHAMFER FOR INSERTION ONE SIDE ONLY .750 ANEL CUTOUT THICKNESS 0.045 TO 0.070 LACK MARKING DATE CODE .663 SJS840520 IM \ SJ5840520 SJS840520 I BLACK DOT—BLACK MARKING

SJS840300

Abstract: SJS840310
Contextual Info: SJS840300 I REV ECN A 0 .5 7 3 APP'D 6 4 2 8 j,^ - 7 ^ /z ^ y HITE MARKING 0.040" HIGH CHARACTER >24 .550 0.451 .024 APCD YYWWSJS840300 SJS840300 SJS840300 I .077 3LACK MARKING DATE CODE BLACK DOT- .663 BLACK MARKING TWO SIDES NOTES: 1. MATERIALS: HOUSING: PA6/6

SJS840340

Contextual Info: SJS840340 REV .244 .544 .077 I ECIM I APPD~ HITE MARKING 0.040" HIGH CHARACTERS HITE DOT 5.451 .024 -WHITE MARKING DATE CODE SJS840340 SJS840340 APCD YYW W -^. SJS 840340 .677 SCALE -WHITE MARKING TWO SIDES 3:1 NOTES: 1. MATERIALS: HOUSING: P A 6/6 CONTACT RETAINER: STAINLESS STEEL

M8050

Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11

M8050

Abstract: m8050 NPN equivalent M8050 equivalent
Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11

L9014TLT1G

Abstract: L9014 transistor 0440 L9014QLT1G L9014RLT1G L9014SLT1G L9015
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014XLT1G FEATURE 3 ƽComplementary to L9015. ƽ We declare that the material of product compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽ We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G LMBT5551LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5550LT1G M1F 3000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014XLT1G FEATURE 3 ƽComplementary to L9015. ƽPb-Free package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L9014QLT1G 14Q 3000/Tape&Reel L9014QLT3G 14Q

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081XT1G FEATURE ƽLow Cob,Cob=2pF Typ. . ƽEpitaxial planar type. 3 ƽPNP complement:L2SA1576A ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. LBAV99LT1G Dual Series Switching Diode • We declare that the material of product 3 compliance with RoHS requirements. 1 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1G FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION 2 Marking Shipping L2SA812QLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode LBAV70LT1G FEATURE • We declare that the material of product 3 compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION Device Marking 2 Shipping LBAV70LT1G A4

L9014

Abstract: L9015QLT1G L9015RLT1G L9015SLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015XLT1G FEATURE 3 ƽComplementary to L9014. ƽ We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping

Contextual Info: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount Pb-Free Package is available. LMSD601–RLT1G LMSD601–SLT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMSD601-RLT1G YR 3000/Tape&Reel LMSD601-RLT3G YR

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. L2SA1774QLTIG Series z DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SA1774QLT1G FQ 3000/Tape&Reel