MARKING XS Search Results
MARKING XS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MG80C186-10/BZA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
|
||
| ICM7555MTV/883 |
|
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
|
||
| MQ80C186-10/BYA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
|
||
| 54121/BCA |
|
54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
|
||
| 54F191/QEA |
|
54F191/QEA - Dual marked (5962-9058201EA) |
|
MARKING XS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
|
Original |
1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE | |
PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
|
OCR Scan |
OT143, OT323, OD123 OD323 BZV49 BAW56W BSR40 2PB709AR BAW56 BSR41 PXTA14 mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401 | |
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
|
Original |
GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A | |
|
Contextual Info: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL |
Original |
FJX3904 SC-70 FJX3904TF | |
Specialists
Abstract: BAS40W BAS40W-04 BAS40W-05 BAS40W-06 X_S marking XS marking
|
OCR Scan |
BAS40W-04-05-06 OT-323 OT-323, MIL-STD-202, BAS40W BAS40W-04 BAS40W-05 BAS40W-06 Specialists X_S marking XS marking | |
NT6SM32M16AG-S1
Abstract: NT6SM16M32 128M32 NT6SM16M32AK NT6SM32M16AG Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb
|
Original |
512Mb NT6SM32M16AG NT6SM16M32AK NT6SM16M32RAK -32Meg -16Meg -54-ball -90-ball x13mm) 32M16 NT6SM32M16AG-S1 NT6SM16M32 128M32 Lpddr2 Idd1 8M32R NT6SM16M32AK-S1 lpddr2 layout lpddr2 256mb | |
MLL34
Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
|
OCR Scan |
BC846AT BC846BT BC817-16L BC817-25L BC817-40L BC847AT BC847BT BC847CT BCX70KL BCW72L MLL34 m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking | |
THHN WIRE 500 kcmil
Abstract: 103-427 XSL-96-427 XSL-11-427 XSL-31-427 wt marking
|
Original |
B-427 XSL-11-427 XSL-96-427 XSL-17-427 B-498 XC-240-498 XC-318-498 XC-375-498 THHN WIRE 500 kcmil 103-427 XSL-31-427 wt marking | |
BD135Contextual Info: BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 1. Emitter TO-126 2.Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU |
Original |
BD135 BD136, BD138 BD140 O-126 BD13516S BD1356STU BD13510STU BD13516STU BD13716STU | |
MMBFJ305Contextual Info: MMBFJ305 N-Channel RF Amplifier SOT-23 Features G • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50. S Marking : 6Q D Note : Drain & Source are interchangeable. |
Original |
MMBFJ305 OT-23 MMBFJ305 | |
|
Contextual Info: MMSD3070 Small Signal Diode SOD123 COLOR BAND DENOTES CATHODE TOP MARKING: 33 Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM |
Original |
MMSD3070 OD123 | |
J13009-1
Abstract: j13009 FJPF13009
|
Original |
FJPF13009 O-220 FJPF13009H1TU J13009-1 O-220F FJPF13009H2TU J13009-2 J13009-1 j13009 FJPF13009 | |
j13009Contextual Info: FJA13009 High-Voltage Switch Mode Application Features • High-Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-3P 1.Base 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method FJA13009TU J13009 TO-3P |
Original |
FJA13009 FJA13009TU J13009 j13009 | |
|
Contextual Info: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Marking Package Packing Method KSA1015GRTA |
Original |
KSA1015 KSC1815 KSA1015GRTA A1015 KSA1015YTA | |
|
|
|||
fairchild top marking
Abstract: MMSD3070 FAIRCHILD DIODE
|
Original |
MMSD3070 OD123 fairchild top marking MMSD3070 FAIRCHILD DIODE | |
|
Contextual Info: MB1S - MB8S Bridge Rectifiers Features • • • • Low leakage Surge overload rating : 35 amperes peak. Ideal for printed circuit board. UL certified, UL #E111753 and E326243. SOIC-4 Polarity symbols molded or marking on body Absolute Maximum Ratings * |
Original |
E111753 E326243. | |
|
Contextual Info: MB10S Bridge Rectifier Features • • • • Low leakage Surge overload rating : 35 amperes peak. Ideal for printed circuit board. UL certified, UL #E111753 and E326243. SOIC-4 Polarity symbols molded or marking on body Absolute Maximum Ratings * Symbol |
Original |
MB10S E111753 E326243. | |
|
Contextual Info: SIEMENS BCR 196W PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=47kfl, R2=22kiî WXs UPON INQUIRY 1 =B Package o BCR 196W Pin Configuration II CO Marking Ordering Code III II CM |
OCR Scan |
47kfl, OT-323 | |
|
Contextual Info: LL4148 Small Signal Diode COLOR BAND MARKING 1ST BAND Black SOD80 2ND BAND Green The 1st Band indicates the cathode band Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VRRM IF AV if IFSM Maximum Repetitive Reverse Voltage |
Original |
LL4148 | |
FAIRCHILD SMD MARKING
Abstract: BAS70SL SMD DIODE MARKING 14 FAIRCHILD DIODE
|
Original |
BAS70SL OD-923F FAIRCHILD SMD MARKING BAS70SL SMD DIODE MARKING 14 FAIRCHILD DIODE | |
|
Contextual Info: RB751SL Schottky Barrier Diodes Features • • • • Low Forward Voltage Drop Fast switching Very Small and Thin SMD package Profile height, 0.43mm max • Footprint, 1.0 x 0.6mm Connection Diagram 1 2 2 SOD-923F Marking: AD Absolute Maximum Ratings * |
Original |
RB751SL OD-923F | |
|
Contextual Info: FSB660A PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous. E B SuperSOT -3 SOT-23 Ordering Information Part Number Marking Package Packing Method |
Original |
FSB660A OT-23) | |
FZT749Contextual Info: FZT749 PNP Low Saturation Transistor Description 4 These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking |
Original |
FZT749 OT-223 OT-223 FZT749 | |
KST3906
Abstract: WH*s
|
Original |
KST3906 OT-23 KST3906 WH*s | |