MARKING WCS SOT Search Results

Contextual Info: SIEMENS BCR 133W NPN Silicon Digital Transistor Type Marking Ordering Code Pin Configuration BCR 133W WCs 1=B Q62702-C2286 Package 2 =E 3 =C SOT-323 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage ^CEO '/CBO 50 Emitter-base voltage

Contextual Info: SIEMENS BCR 133W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=10kQ, R2=10k£2 Type Marking Ordering Code Pin Configuration BCR 133W WCs 1=B Q62702-C2286 Package 2=E 3=C SOT-323

Q62702-C2286

Contextual Info: BCR 133W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 133W WCs 1=B Q62702-C2286 Package 2=E 3=C SOT-323

WCs MARKING

Abstract: Q62702-C2256
Contextual Info: BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 133 WCs 1=B Q62702-C2256 Package 2=E 3=C SOT-23 Maximum Ratings

Q62702-C2256

Abstract: 133 MARKING
Contextual Info: SIEMENS BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^IO kQ , R2=10kiî Type Marking Ordering Code BCR 133 WCs Pin Configuration Q62702-C2256 1=B Package 2=E 3=C SOT-23

BCR133W

Abstract: VSO05561
Contextual Info: BCR133W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR133

Contextual Info: BCR133 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23

Contextual Info: SIEMENS BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10k£l, R2=10kfl Marking Ordering Code Pin Configuration BCR 133 WCs 1 =B Q62702-C2256 Package N> II m Type 3=C

BCR133

Abstract: VPS0516
Contextual Info: BCR133 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR133 WCs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR133W

Abstract: VSO05561
Contextual Info: BCR133W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323

Contextual Info: BCR 133 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 133 WCs Pin Configuration 1=B 2=E Package 3=C SOT-23

VSO05561

Contextual Info: BCR 133W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 133W WCs Pin Configuration 1=B 2=E Package 3=C

Contextual Info: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package

BCR108W

Abstract: BCR133 BCR133F BCR133S BCR133W BCW66 infineon marking code B2 SOT23
Contextual Info: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package

BCR133

Contextual Info: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package

BCR133

Abstract: infineon marking code B2 SOT23 TRANSISTOR MARKING CODE TP infineon marking code E1 sot23 BCR133S BCR108S BCR108W BCR133W BCW66 102c marking
Contextual Info: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR133. NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • BCR133S: Two internally isolated transistors with good matching in one multichip package

BCR133

Abstract: BCR133F BCR133L3 SEMH11
Contextual Info: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching

Contextual Info: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching

Contextual Info: BCR133./SEMH11 NPN Silicon Digital Transistor • Switching in circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1 = 10 kΩ, R2 = 10 kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching

s89c

Abstract: MT4C4067 64k DRAM
Contextual Info: MICRON TECHNOLOGY INC SSE D 0 0 Q5 7 2 7 7 3 b • MRN b lllS H T PRELIMINARY MT4C4067 883C 64K X 4 DRAM IC R Ü N MILITARY DRAM 64K X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883, Class B 18-Pin DIP (D -6)

Contextual Info: ADVANCE M in S Q M I MT4LC8M8EÎ/B& S MEG X 8 DRAM 8 MEG X 8 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 13 row-addresses, 10 column-addresses El or 12 row-addresses, 11 column-addresses (B6)

Contextual Info: S IE M E N S BCR 133S NPN Silicon Digital Transistor Array »Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package >Built in bias resistors (R-|=10kA, R2=10kfl) Type BCR 133S Marking Ordering Code Pin Configuration