MARKING V58 Search Results
MARKING V58 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54AC20/SDA-R |
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54AC20/SDA-R - Dual marked (M38510R75003SDA) |
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MARKING V58 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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V170R
Abstract: SO7K40 so7k SO7K250 sanken snr ERZC07DK330 varistor 420 s 14k sanken varistor SNR varistor 7k 270 ZOV Varistor
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R6921ZOV511RA110 4K221 S20K140 ERZC20OK361 ERZC20DK391 S20K230 S20K250 ERZC20DK471 S20K300 V480LA V170R SO7K40 so7k SO7K250 sanken snr ERZC07DK330 varistor 420 s 14k sanken varistor SNR varistor 7k 270 ZOV Varistor | |
V5834LContextual Info: NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N−Channel Features • • • • • • Low RDS on Low Capacitance Optimized Gate Charge NVMFS5834NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring |
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NTMFS5834NL, NVMFS5834NL NVMFS5834NLWF NTMFS5834NL/D V5834L | |
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Contextual Info: NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N−Channel Features • • • • • • Low RDS on Low Capacitance Optimized Gate Charge NVMFS5834NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring |
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NTMFS5834NL, NVMFS5834NL NVMFS5834NLWF NTMFS5834NL/D | |
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Contextual Info: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product |
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NVMFS5830NL NVMFS5830NLWF NVMFS5830NL/D | |
74LVC1G58
Abstract: 74LVC1G58GF 74LVC1G58GM 74LVC1G58GV 74LVC1G58GW JESD22-A114E marking code 5
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74LVC1G58 74LVC1G58 74LVC1G58GF 74LVC1G58GM 74LVC1G58GV 74LVC1G58GW JESD22-A114E marking code 5 | |
74LVC1G58-Q100Contextual Info: 74LVC1G58-Q100 Low-power configurable multiple function gate Rev. 1 — 10 June 2014 Product data sheet 1. General description The 74LVC1G58-Q100 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, |
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74LVC1G58-Q100 74LVC1G58-Q100 74LVC1G58 | |
74LVC1G58
Abstract: 74LVC1G58GF 74LVC1G58GM 74LVC1G58GV 74LVC1G58GW
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74LVC1G58 74LVC1G58 74LVC1G58GF 74LVC1G58GM 74LVC1G58GV 74LVC1G58GW | |
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Contextual Info: 74LVC1G58 Low-power configurable multiple function gate Rev. 8 — 22 April 2014 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND, |
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74LVC1G58 74LVC1G58 | |
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Contextual Info: 74LVC1G58 Low-power configurable multiple function gate Rev. 6 — 23 September 2011 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND, |
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74LVC1G58 74LVC1G58 | |
T225-6
Abstract: marking code 581
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Characteris01 1-02MM T225-6 marking code 581 | |
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Contextual Info: 1GB, 2GB X64, SR, DR : 240-Pin DDR3 SDRAM UDIMM SDRAM DDR3 128M, 256M X 64 UDIMM Features: • ROHS Complaint 240 pin unbuffered dual in-line memory module (UDIMM) Fast data transfer rates PC3-10600, PC3-8500 Utilizes DDR3-1066 and DDR3-1333 SDRAM FBGA |
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240-Pin PC3-10600, PC3-8500 DDR3-1066 DDR3-1333 128MX64) 256MBX64) 8125us -128Mx8 128MX8 | |
VARISTOR z151
Abstract: varistor z301 zo 150 77 z251 zo 107
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10x1000 VARISTOR z151 varistor z301 zo 150 77 z251 zo 107 | |
marking code V64
Abstract: sot v65 DZ23B43-V V97 marking DZ23B2V7-V sot23 marking v65
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DZ23-V-G AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 marking code V64 sot v65 DZ23B43-V V97 marking DZ23B2V7-V sot23 marking v65 | |
marking code V64
Abstract: marking code V72 MARKING V84
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DZ23-V-G AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 marking code V64 marking code V72 MARKING V84 | |
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Contextual Info: NVMFS5834NL Product Preview Power MOSFET 40 V, 9.3 mW, 76 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified |
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NVMFS5834NL NVMFS5834NL/D | |
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Contextual Info: 4 * SPECTRUM CONTROL INC. 1 a ers > These filters are ideal for microwave applications such as attenuators and oscillators, and perform well in high impedance circuits where large capacitance values are not practical. Features Miniature size to allow effective use of space |
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030pF VDC/115 MIL-F-28861 | |
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Contextual Info: LM6211 www.ti.com SNOSAH2C – FEBRUARY 2006 – REVISED MARCH 2013 LM6211 Low Noise, RRO Operational Amplifier with CMOS Input and 24V Operation Check for Samples: LM6211 FEATURES 1 Typical 24V Supply Unless Otherwise Noted 2 • • • • • • • |
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LM6211 LM6211 | |
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Contextual Info: LM6211 www.ti.com SNOSAH2C – FEBRUARY 2006 – REVISED MARCH 2013 LM6211 Low Noise, RRO Operational Amplifier with CMOS Input and 24V Operation Check for Samples: LM6211 FEATURES 1 Typical 24V Supply Unless Otherwise Noted 2 • • • • • • • |
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LM6211 LM6211 | |
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Contextual Info: NVD5803N Power MOSFET 40 V, 85 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com |
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NVD5803N AEC-Q101 NVD5803N/D | |
NVD5862Contextual Info: NVD5862N Power MOSFET 60 V, 5.7 mW, 98 A, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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NVD5862N AEC-Q101 NVD5862N/D NVD5862 | |
NVD5867
Abstract: NVD5867NLT4G 67LG 051BSC
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NVD5867NL AEC-Q101 NVD5867NL/D NVD5867 NVD5867NLT4G 67LG 051BSC | |
NVD5865Contextual Info: NVD5865NL Power MOSFET 60 V, 38 A, 16 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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NVD5865NL AEC-Q101 NVD5865NL/D NVD5865 | |
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Contextual Info: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable |
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NVMFS5830NL NVMFS5830NL/D | |
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Contextual Info: NVMFS5826NL Power MOSFET 60 V, 24 mW, 26 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable |
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NVMFS5826NL NVMFS5826NL/D | |