MARKING V58 Search Results

V170R

Abstract: SO7K40 so7k SO7K250 sanken snr ERZC07DK330 varistor 420 s 14k sanken varistor SNR varistor 7k 270 ZOV Varistor
Contextual Info: VARISTORS /> S C 32 i< !K <o Style Designation: (typical Standard Marking: R6921ZOV511RA110 Where: RCoating identification, R means standard flame-retardant fluid bed epoxy. 69 Size code, 2 numbers. See Dimensions Table. 21 Lead Configuration code, 1 or 2 numbers used only for non­

tda7052 equivalent

Abstract: TDA7052 TDA7052 application note TDA7052 audio power amplifier TDA7052 Audio power amplifier IC tda7052 ic TDA7052N tda7052n2 TV210D NXP dip8 date code marking
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA7052 1 W BTL mono audio amplifier Product specification File under Integrated Circuits, IC01 July 1994 Philips Semiconductors Product specification 1 W BTL mono audio amplifier TDA7052 GENERAL DESCRIPTION The TDA7052 is a mono output amplifier in a 8-lead dual-in-line DIL plastic package. The device is designed for

V5834L

Contextual Info: NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N−Channel Features • • • • • • Low RDS on Low Capacitance Optimized Gate Charge NVMFS5834NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring

V5834L

Abstract: 5834L
Contextual Info: NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N−Channel Features • • • • • • Low RDS on Low Capacitance Optimized Gate Charge NVMFS5834NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring

NVMFS5826NLT1G

Contextual Info: NVMFS5826NL Power MOSFET 60 V, 24 mW, 26 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5826NLWF − Wettable Flanks Product

Contextual Info: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product

Contextual Info: NVMFS5885NL Power MOSFET 60 V, 15 mW, 39 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5885NLWF − Wettable Flanks Product

Contextual Info: NTMFS5834NL, NVMFS5834NL Power MOSFET 40 V, 75 A, 9.3 mW, Single N−Channel Features • • • • • • Low RDS on Low Capacitance Optimized Gate Charge NVMFS5834NLWF − Wettable Flanks Product NVMFS Prefix for Automotive and Other Applications Requiring

Contextual Info: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product

74LVC1G58

Abstract: 74LVC1G58GF 74LVC1G58GM 74LVC1G58GV 74LVC1G58GW JESD22-A114E marking code 5
Contextual Info: 74LVC1G58 Low-power configurable multiple function gate Rev. 04 — 27 April 2009 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,

74LVC1G58-Q100

Contextual Info: 74LVC1G58-Q100 Low-power configurable multiple function gate Rev. 1 — 10 June 2014 Product data sheet 1. General description The 74LVC1G58-Q100 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND,

V5832L

Contextual Info: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5832NLWF − Wettable Flanks Product

Contextual Info: NTMFS5844NL, NVMFS5844NL Power MOSFET 60 V, 61 A, 12 mW, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5844NLWF − Wettable Flanks Product

74LVC1G58

Abstract: 74LVC1G58GF 74LVC1G58GM 74LVC1G58GV 74LVC1G58GW
Contextual Info: 74LVC1G58 Low-power configurable multiple function gate Rev. 05 — 15 October 2010 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,

Contextual Info: 74LVC1G58 Low-power configurable multiple function gate Rev. 6 — 23 September 2011 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,

Contextual Info: 74LVC1G58 Low-power configurable multiple function gate Rev. 7 — 6 December 2011 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,

Contextual Info: 74LVC1G58 Low-power configurable multiple function gate Rev. 7 — 6 December 2011 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,

74LVC1G58

Abstract: 74LVC1G58GM 74LVC1G58GV 74LVC1G58GW
Contextual Info: 74LVC1G58 Low-power configurable multiple function gate Rev. 01 — 15 September 2004 Product data sheet 1. General description The 74LVC1G58 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.

74LVC1G58GV

Abstract: 74LVC1G58GW JESD22-A114E 74LVC1G58 74LVC1G58GF 74LVC1G58GM
Contextual Info: 74LVC1G58 Low-power configurable multiple function gate Rev. 03 — 27 August 2007 Product data sheet 1. General description The 74LVC1G58 provides configurable multiple functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND,

marking code YK

Contextual Info: 74LVC1G58 Low-power configurable multiple function gate Rev. 02 — 22 February 2007 Product data sheet 1. General description The 74LVC1G58 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.

MARKING V58

Contextual Info: C TO X BAND N-CHANNEL GaAs MESFET FEATURES NE72218 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz GATE LENGTH: Lg = 0.8 PACKAGE OUTLINE 18 (recessed gate) - 2.1 ± 0 .2 - H .25 ± 0.1 H GATE WIDTH: W g = 400 jim 0-3^0.05 4 PIN SUPER MINI MOLD

T225-6

Abstract: marking code 581
Contextual Info: LOW PROFILE SERIES SPECIFICATIONS 550» 5 8 0 ,6 2 0 and 6 8 0 VAC Varistors Recognitions To Safety Agency Standards Maida Style Number R691 *ZOV551 RA255 R65* *ZOV551 RA510 R66*ZOV551RA540 S66* *ZOV551RA690 A X X X X B X X X X R69* •ZOV581RA265 R651 *ZOV581 RA530

Contextual Info: 1GB, 2GB X64, SR, DR : 240-Pin DDR3 SDRAM UDIMM SDRAM DDR3 128M, 256M X 64 UDIMM Features: •            ROHS Complaint 240 pin unbuffered dual in-line memory module (UDIMM) Fast data transfer rates PC3-10600, PC3-8500 Utilizes DDR3-1066 and DDR3-1333 SDRAM FBGA

VARISTOR z151

Abstract: varistor z301 zo 150 77 z251 zo 107
Contextual Info: 53m m Single —Disk Configuration Maida Style Number D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 D77 A B c D E F ZOV131RA49C X X X ZOV141RA530 X X X ZO V151RA570 X X X ZO V181RA630 X X X ZO V231RA730 X X X ZO V251RA800 X X X