NVMFS5830NL Search Results
NVMFS5830NL Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NVMFS5830NLT1G | On Semiconductor | NVMFS5830 - TRANSISTOR POWER, FET, FET General Purpose Power | Original | 114.99KB | 6 | ||
| NVMFS5830NLT3G | On Semiconductor | NVMFS5830 - TRANSISTOR POWER, FET, FET General Purpose Power | Original | 114.99KB | 6 | ||
| NVMFS5830NLWFT1G | On Semiconductor | NVMFS5830 - Power MOSFET 40V 185A 2.3 mOhm Single N-Channel SO-8FL Logic Level | Original | 117.72KB | 6 | ||
| NVMFS5830NLWFT3G | On Semiconductor | NVMFS5830 - Power MOSFET 40V 185A 2.3 mOhm Single N-Channel SO-8FL Logic Level | Original | 117.72KB | 6 |
NVMFS5830NL Price and Stock
onsemi NVMFS5830NLWFT1G-UMNFET SO8FL 40V 172A 2.3M0 - Tape and Reel (Alt: NVMFS5830NLWFT1G-UM) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVMFS5830NLWFT1G-UM | Tape & Reel | 23 Weeks | 1,500 |
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NVMFS5830NLWFT1G-UM | 1,500 |
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NVMFS5830NLWFT1G-UM | Tape & Reel | 100 |
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| NVMFS5830NLWFT1G-UM | Cut Tape | 1 |
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NVMFS5830NLWFT1G-UM |
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NVMFS5830NLWFT1G-UM | 5,900 | 1 |
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onsemi NVMFS5830NLT1GPower Field-Effect Transistor, 185A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVMFS5830NLT1G | 10,562 |
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onsemi NVMFS5830NLT3GPower Field-Effect Transistor, 185A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVMFS5830NLT3G | 7,713 |
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Get Quote | |||||||
onsemi NVMFS5830NLWFT1GPower Field-Effect Transistor, 185A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVMFS5830NLWFT1G | 6,006 |
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Get Quote | |||||||
onsemi NVMFS5830NLWFT3GPower Field-Effect Transistor, 185A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVMFS5830NLWFT3G | 4,789 |
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Get Quote | |||||||
NVMFS5830NL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable |
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nvmfs5830nlnvmfs5830nl/d | |
V5830LContextual Info: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable |
Original |
nvmfs5830nlaec-q101nvmfs5830nl/dv5830l | |
V5830LContextual Info: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable |
Original |
nvmfs5830nlaec-q101nvmfs5830nl/dv5830l | |
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Contextual Info: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product |
Original |
nvmfs5830nlnvmfs5830nlwfnvmfs5830nl/d | |
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Contextual Info: NVMFS5830NL Power MOSFET 40 V, 2.3 mW, 185 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5830NLWF − Wettable Flanks Product |
Original |
nvmfs5830nlnvmfs5830nlwfaec-q101nvmfs5830nl/d |