V5832L Search Results

V5832L

Contextual Info: NVMFS5832NL Product Preview Power MOSFET 40 V, 5 mW, 113 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified

V5832

Contextual Info: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable

Contextual Info: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices*

V5832L

Contextual Info: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices

V5832L

Contextual Info: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5832NLWF − Wettable Flanks Product

V5832

Abstract: NVMFS5832NL MW120A V5832L
Contextual Info: NVMFS5832NL Power MOSFET 40 V, 4.2 mW, 120 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified These are Pb−Free Devices